The invention relates to a single even effect cross section obtaining method based on
simulation. The single even effect cross section obtaining method comprises the following steps of: setting an actual
material structure, geometric structure and
doping parameters of a device, and realizing a complete device model; carrying out
semiconductor characteristic numerical calculation, solving a
diffusion drifting equation, a poisson equation and a current carrier
continuity equation, and obtaining an
electricity characteristic curve of the device; and calibrating key electrical parameters of a single even effect device model so that the device
electricity is in line with theoretical expectation, wherein the key
electricity parameters include a
transistor transfer characteristic curve and a storage
delay characteristic curve. The single even effect cross section obtaining method based on
simulation, provided by the invention, has the advantages that the position of the single even effect error can be located, the relationship among the wiring and size of the device, the technological parameter of the device and the sensibility of the single event effect can be realized, and the confirmation of the single even effect performance can be realized in the
design stage.