The invention relates to a
charge pump circuit of a charge transfer structure CTS suitable for low-
voltage operation. The
charge pump circuit comprises a plurality of cascaded CTS
charge pump sub-units. Each stage of CTS charge pump sub-unit comprises the components of a first NMOS
transistor as a transmission switch, the drain
electrode of the first NMOS
transistor is connected with the input end of this stage, and the source
electrode is connected with the output end of this stage; a second NMOS
transistor of which the drain
electrode is connected with the input end of this stage, the source electrode is connected with the gate electrode of the first NMOS transistor, and the gate electrode is connected with the output end of this stage; a PMOS transistor of which the source electrode is connected with the gate electrode of the first NMOS transistor, the drain electrode is connected with the output end of a next stage, and the gate electrode is connected with the output end of this stage; and a random phase
clock signal in a pair of phase
clock signals, wherein the random phase
clock signal is transmitted to the output end of this stage through an
energy storage lifting
capacitor. The charge pump circuit is based on the improvement of the existing CTS charge pump sub-unit and a cascaded circuit, and increases the gate electrode
voltage of the NMOS transistor as a transmission switch through a simpler structure. Furthermore the charge pump circuit has functions of reducing
side effect of a substrate
bias effect and simplifying design for a circuit board diagram.