46results about How to "Control deposition rate" patented technology

The invention relates to a method for preparing a one-dimensional self-assembly material with a ZnO nanorod array as a template. The method comprises the following steps: the ZnO nanorod array which is used as the template is immersed in a nitrate solution of a transition metal or a rare earth metal, and the ZnO nanorod array undergoes a hydrothermal reaction at 90-200DEG C. Compared with synthetic methods with other templates, the hydrothermal synthetic method with the ZnO nanorod array as the template has the advantages of simple technology, suitableness of the large area preparation and omission of a template removal step, so a difficulty that the film structure can be easily destroyed in the template removal process of the synthetic methods with other templates is solved.

The invention relates to a method for preparing smooth and dense silver-coated copper powder by electroless plating, adding deionized water and a dispersant to the activated copper powder to obtain a copper nanoparticle suspension; adding a complexing agent to the silver nitrate aqueous solution , to prepare a silver complex solution; mix the above solutions, then add reducing agent solution and nano-silver suspension in turn, stir at room temperature to obtain a silver-coated copper nanoparticle suspension, leave it to stand, wash with water, and dry to obtain a smooth and dense silver-coated copper powder . Compared with the prior art, the present invention adds nano-silver particles to the plating solution, and the obtained silver-coated copper powder is densely covered, smooth and free of pores, has excellent electrical conductivity and oxidation resistance, and has a unique role in the electronic paste industry. High application value.

The invention relates to a preparation device of a high-throughput composed material chip. The preparation device comprises a preparation cavity, a raw material output device stretching into the preparation cavity, an evaporator module contained in the preparation cavity, a plurality of discrete masks and a continuous mask. The raw material output device is arranged between the evaporator module and the discrete masks / continuous mask and used for quantitatively supplying raw materials to the evaporator module when the air pressure in the raw material output device is the same as that in the preparation cavity. The evaporator module is used for evaporating the raw materials supplied by the raw material output device so that steam can be formed. The steam is deposited on a substrate through the discrete masks and / or the continuous mask, so that the high-throughput composed material chip is formed. The invention further relates to a preparation method of the high-throughput composed material chip adopting the preparation device and the high-throughput composed material chip prepared through the preparation method. According to the preparation device of the high-throughput composed material chip, the raw materials can be supplemented to the evaporator module without destroying the working air pressure, and thus the preparation efficiency of the chip can be improved.

The invention provides a magnetron sputtering cathode surface gas density distribution control device. Cathode surface gas density distribution can be even, and then it is guaranteed that the thickness of a coating film is basically the same in the length direction of a cathode target. The device comprises the cathode target located in a shielding cover, a kidney-shaped sputtering hole is formed in a shielding cover panel exactly facing the cathode target, the width of the middle of the kidney-shaped sputtering hole is consistent, and the widths of the two ends of the kidney-shaped sputtering hole are gradually reduced. The length direction of the kidney-shaped sputtering hole is consistent with that of the cathode target.

The invention relates to a preparation method of a sulfur / carbon / oxide combined electrode material. The preparation method comprises depositing sulfur and oxide on a carbon material as a carrier with excellent performances to obtain the sulfur / carbon / oxide combined electrode material. The carbon material is one of graphene, CMK-3, carbon nanotubes and carbon black. The oxide is one of silica, copper oxide, silver oxide, nickel oxide, ferrous oxide, tin oxide and titanium oxide. The sulfur / carbon / oxide combined electrode material comprises 50-90wt% of sulfur, 5-20wt% of carbon and 5-30wt% of the oxide. Through control of acid types and pH, and organic solvent types and properties, the sulfur / carbon / oxide combined electrode material with fine particles and high coating uniformity is obtained. The sulfur / carbon / oxide combined electrode material as a lithium-sulfur battery positive pole material has high specific capacity and excellent cycling properties and has a good application prospect in the field of batteries.

The invention provides a device for preparing a large-area antimony selenide thin film and its method and application. The device is horizontally fixed with a cylinder in the deposition chamber of the deposition device, and one side of the cylinder is connected with an argon gas supply pipe The other side of the cylinder is provided with a long hole extending in the horizontal direction, and a cylindrical net drain for containing antimony selenide particles is coaxially arranged in the cylinder. One end of the net drain is connected to a rotating shaft and It can rotate in the cylinder; there is a sample stage at the position opposite to the long hole, and the sample stage is connected with the lifting rod and can move up and down with the lifting rod at a uniform speed. A substrate is provided, and a baffle is provided between the sample stage and the cylinder. The invention prepares a large-area antimony selenide thin film with good crystallization state, good film-forming uniformity, and small defect density by adjusting the number of up and down movements of the substrate, the temperature of the substrate and the source, and the gas flow rate of high-purity argon. , and its equipment and process are simple, which is conducive to popularization and application.

The invention provides an optical ZnS material and a preparation method thereof. The preparation method comprises the following steps of respectively loading zinc and sulfur into a first crucible and a feeding device of a chemical vapor deposition furnace; heating the first crucible, a second crucible and a deposition cavity, and feeding sulfur into the second crucible through the feeding device; introducing inert carrier gas into the first crucible, and introducing inert carrier gas and hydrogen into the second crucible, so that carrier gas containing zinc vapor and sulfur vapor enters the deposition cavity through pipelines to deposit ZnS, and the sulfur is supplemented to the second crucible regularly and quantitatively through the feeding device in the deposition process so as to maintain the saturated vapor pressure of the sulfur within the range of 0.8-1.8 KPa. According to the preparation method disclosed by the invention, H2S is not generated, so that the influence on the transmittance and emissivity of the ZnS material due to a hydrogen-zinc complex formed by H ions generated by H2S decomposition and Zn vapor can be avoided.

The invention discloses a chemical palladium solution applied to chemical gold-palladium-gold plating on PCB, including main salt, complexing agent, reducing agent, stabilizer, pH buffering agent and surface active agent, with mass concentration as unit, the above-mentioned composition The ratio of points is: palladium concentration in the main salt: 0.4-0.6g / L; complexing agent: 0.1-30g / L; reducing agent: 0.1-25g / L; stabilizer: 1-150mg / L; pH buffer : 1‑25g / L; Surfactant: 0.1‑10mg / L; The remaining components are pure water. The palladium layer prepared by the palladium solution can meet good welding and bonding requirements, and is also suitable for surface treatment of lines with a line width / space below 0.5mil / 0.5mil or even smaller.