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Optical ZnS material and preparation method thereof

An optical and raw material technology, applied in the field of optical ZnS materials and its preparation, can solve the problems of low transmittance at high temperature, low transmittance, high long-wave radiation rate, etc., achieve low emissivity, improve optical quality, and expand the scope of application Effect

Active Publication Date: 2021-04-09
SINOMA SYNTHETIC CRYSTALS CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The inventor found that the existing CVDZnS preparation method produces a large amount of highly active H ions, the H ions vaporize with Zn to form complex hydrogen-zinc complexes deposited in ZnS, resulting in increased scattering and decreased transmittance of ZnS materials
In addition, due to the excessive impurities inside the ZnS material, the long-wave band emissivity of the ZnS material is also as high as 0.3 or more, which leads to the high long-wave emissivity of the ZnS material at high temperature and the low high-temperature transmittance, so it can only be used at around 200 °C. Under the temperature conditions, the application of ZnS materials at higher temperature conditions is limited

Method used

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  • Optical ZnS material and preparation method thereof
  • Optical ZnS material and preparation method thereof
  • Optical ZnS material and preparation method thereof

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preparation example Construction

[0032] The invention provides a kind of preparation method of optical ZnS material, comprises the following steps:

[0033] The zinc raw material and the sulfur raw material are respectively charged into the first crucible and the feeding device of the chemical vapor deposition furnace;

[0034] Heat the first crucible, the second crucible, and the deposition chamber of the chemical vapor deposition furnace, and after the first crucible is heated to 560-640°C, the second crucible is heated to 230-290°C, and the deposition chamber is heated to 560-640°C, Throwing sulfur into the second crucible through the feeding device;

[0035] After the zinc and sulfur are melted, an inert carrier gas is introduced into the first crucible, and a mixture of inert carrier gas and hydrogen is introduced into the second crucible, so that the carrier gas containing zinc vapor and sulfur vapor enters the deposition chamber through the pipeline respectively, and the ZnS is deposited on the deposi...

Embodiment 1

[0069]

[0070] 100kg of zinc raw material and 60kg of sulfur raw material are respectively charged into the first crucible and feeding device of the chemical vapor deposition furnace;

[0071] Heating the first crucible, the second crucible and the deposition chamber, wherein the heating rate of the first crucible and the deposition chamber is 0.6°C / min, the heating rate of the bottom of the second crucible is 0.15°C / min, and the temperature rise of the side wall of the second crucible The rate is 0.1°C / min;

[0072] After the temperature of the first crucible is raised to 560°C, the temperature of the second crucible is raised to 230°C, and the temperature of the deposition chamber is raised to 600°C, the electromagnetic valve of the feeding device is opened, and 60kg of sulfur is put into the second crucible through the feeding device;

[0073] After the zinc in the first crucible and the sulfur in the second crucible are melted, the carrier gas argon is introduced into t...

Embodiment 2

[0080]

[0081] 100kg of zinc raw material and 60kg of sulfur raw material are respectively charged into the first crucible and feeding device of the chemical vapor deposition furnace;

[0082] Heating the first crucible, the second crucible, and the deposition chamber, wherein the heating rate of the first crucible and the deposition chamber is 1.0°C / min, the heating rate of the bottom of the second crucible is 0.2°C / min, and the heating rate of the side wall of the second crucible The rate is 0.2°C / min;

[0083] After the temperature of the first crucible is raised to 580°C, the temperature of the second crucible is raised to 240°C, and the temperature of the deposition chamber is raised to 610°C, the electromagnetic valve of the feeding device is opened, and 60kg of sulfur is put into the second crucible through the feeding device;

[0084] After the zinc in the first crucible and the sulfur in the second crucible are melted, the carrier gas argon is introduced into the f...

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Abstract

The invention provides an optical ZnS material and a preparation method thereof. The preparation method comprises the following steps of respectively loading zinc and sulfur into a first crucible and a feeding device of a chemical vapor deposition furnace; heating the first crucible, a second crucible and a deposition cavity, and feeding sulfur into the second crucible through the feeding device; introducing inert carrier gas into the first crucible, and introducing inert carrier gas and hydrogen into the second crucible, so that carrier gas containing zinc vapor and sulfur vapor enters the deposition cavity through pipelines to deposit ZnS, and the sulfur is supplemented to the second crucible regularly and quantitatively through the feeding device in the deposition process so as to maintain the saturated vapor pressure of the sulfur within the range of 0.8-1.8 KPa. According to the preparation method disclosed by the invention, H2S is not generated, so that the influence on the transmittance and emissivity of the ZnS material due to a hydrogen-zinc complex formed by H ions generated by H2S decomposition and Zn vapor can be avoided.

Description

technical field [0001] The invention relates to the technical field of infrared optical materials, in particular to an optical ZnS material and a preparation method thereof. Background technique [0002] Infrared optical materials include window and lens materials at ambient, higher and lower temperatures, and are commonly used in optical windows for infrared detection systems. In a high-speed flight environment, the optical window of the infrared detection system exposed to the atmosphere will bear extremely harsh dual loads of aerodynamic force and aerodynamic heat. Pneumatic heating causes the temperature of the optical window to rise sharply, resulting in the thermal radiation effect of the window, which will lead to saturation of the photodetector in severe cases; and if the thermodynamic properties of the window material cannot withstand the aerodynamic load and aerodynamic thermal load, the entire imaging system will be severely damaged. destroy. Therefore, for the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/30C23C16/448C23C16/52
CPCC23C16/306C23C16/4481C23C16/52C30B29/48C30B23/00C30B25/00C30B29/46C30B35/002C30B25/10
Inventor 钱纁肖红涛张旭党参张克宏宫月
Owner SINOMA SYNTHETIC CRYSTALS CO LTD
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