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Equipment for preparing a large-area antimony selenide film and method and application of equipment

A large-area antimony selenide technology, which is applied in the manufacture of final products, sustainable manufacturing/processing, electrical components, etc., can solve the problems of inability to prepare large areas and unsatisfactory quality of antimony selenide thin films, and achieve good deposition thickness and Film quality, deposition rate can be adjusted, good film uniformity

Active Publication Date: 2019-11-12
HEBEI UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a kind of equipment for preparing large-area antimony selenide thin film and its method and application, to solve the problem of the unsatisfactory quality of antimony selenide thin film prepared by the existing carrier gas transport deposition method and the inability to prepare large area antimony selenide film problem

Method used

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  • Equipment for preparing a large-area antimony selenide film and method and application of equipment
  • Equipment for preparing a large-area antimony selenide film and method and application of equipment
  • Equipment for preparing a large-area antimony selenide film and method and application of equipment

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Embodiment 1

[0028] Such as figure 1 As shown, the equipment of the present invention can be modified on the basis of existing VTD equipment, and its structure is that a cylinder 2 is horizontally fixed in the deposition chamber 1 of the deposition equipment, and one side of the cylinder 2 is connected with the argon gas supply pipe 3 The other side of the cylinder 2 is provided with a horizontally extending elongated hole 4, the other parts of the cylinder 2 are sealed, and a cylindrical hole for containing high-purity antimony selenide particles is coaxially provided in the cylinder 2. Mesh drain 5, the mesh of which is smaller than antimony selenide particles, one end of the mesh drain 5 is connected with a rotating shaft, and the rotating shaft passes through the bearing assembly provided on the end face of the cylinder and is connected to the driving device. The mesh drain 5 can play a role in the driving device. Rotate at a constant speed in cylinder 2.

[0029] A sample stage 6 is ...

Embodiment 2

[0033] Apply the present invention to prepare large-area antimony selenide solar cell, the structure of solar cell is glass substrate, molybdenum electrode, antimony selenide film, cadmium sulfide, zinc oxide, aluminum-doped zinc oxide, silver electrode (such as image 3 shown).

[0034] Its preparation process is as follows:

[0035] (1) Preparation of the substrate

[0036] Using glass as a substrate, first soak the glass in an electronic cleaner solution for 12 hours, then take it out, rinse it with deionized water, and finally blow it dry with nitrogen.

[0037] (2) Deposit molybdenum back electrode

[0038] The Mo back electrode was prepared by magnetron sputtering technology, Ar gas was used as the reaction gas, the sputtering pressure was 0.4 Pa, and the sputtering power density was about 4 W / cm 2 , the thickness of the prepared film is about 700 nm, and the resistivity of the prepared film is about 3×10 -5 Ω·cm.

[0039] (3) Deposition of antimony selenide layer ...

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Abstract

The invention provides equipment for preparing a large-area antimony selenide film and a method and application of the equipment. The equipment is characterized in that a cylinder is horizontally fixed in a deposition chamber of deposition equipment; one side of the cylinder is communicated with an argon gas supply pipe, and a strip hole extending in the horizontal direction is formed in the otherside of the cylinder; a cylindrical net leak part for containing antimony selenide particles is coaxially arranged in the cylinder, and one end of the net leak part is connected with a rotating shaftand can rotate in the cylinder; a sample table is arranged at the position opposite to the strip hole, the sample table is connected with a lifting rod and can move up and down along with the liftingrod; a substrate is arranged on the table surface, opposite to the strip hole, of the sample table; and a baffle plate is arranged between the sample table and the cylinder. According to the equipment, the large-area antimony selenide film with good crystallization state, high film forming uniformity and relatively small defect density is prepared by regulating and controlling the upper and lowermovement times of the substrate, the temperature of the substrate and the temperature of the source and the gas flow of introduced high-purity argon; and the equipment and the process are simple, andthe large-area antimony selenide film is beneficial to popularization and application.

Description

technical field [0001] The invention relates to the technical field of semiconductor thin film preparation, in particular to a device for preparing a large-area antimony selenide thin film, a method and an application thereof. Background technique [0002] Antimony Selenide (Sb 2 Se 3 ), as a stable inorganic semiconductor material less affected by water and temperature, is abundant in nature. Sb 2 Se 3 The material is a quasi-direct bandgap material with a forbidden band width of about 1.2eV and an absorption coefficient greater than 105cm -1 , is a very ideal photovoltaic material. According to the Shockley-Queisser limit theory, the single-junction Sb 2 Se 3 The photoelectric conversion efficiency of solar cells is above 30%. [0003] At present, the preparation methods of high-efficiency antimony selenide solar cells are generally near space sublimation and solution spin coating. As a low-cost manufacturing method for commercial CdTe solar cells, vapor transport...

Claims

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Application Information

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IPC IPC(8): H01L31/0328H01L31/0392H01L31/18
CPCH01L31/0328H01L31/0392H01L31/18Y02P70/50
Inventor 李志强郭春升梁晓杨刘涛
Owner HEBEI UNIVERSITY
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