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Preparing method for transparent conductive oxide film

An oxide film, transparent and conductive technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of black products, large liquid volume, residual pores, etc., to achieve strong adhesion, good film uniformity, and transparency. Good results

Active Publication Date: 2012-08-22
徐东
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the large amount of liquid in the gel, the TCO film prepared by the sol-gel method shrinks when dried and is prone to cracking. During firing, pores and -OH or C often remain, making the product black

Method used

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Examples

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preparation example Construction

[0011] A method for preparing a transparent conductive oxide film according to an embodiment of the present invention, comprising the following steps:

[0012] Step 1. Obtain a sol solution of zinc salt or indium salt and doped metal salt, wherein the viscosity of the sol solution is 15-20 mPa·s, and the concentration of zinc or indium in the zinc salt or indium salt is 0.1-1mol / L , the molar ratio of zinc to doping metal is 0.001~0.03, and the molar ratio of indium to doping metal is 0.05~0.15;

[0013] Step 2. Immerse the film-forming medium into the sol solution, stay for 1-30s, and then pull the medium out of the sol liquid surface at a speed of 1-300cm / min, and then heat it at 80°C-300°C Keep at 0.5~30min at C, cool down;

[0014] Step 3, repeating step 2 until the film thickness on the film-forming medium reaches the desired thickness, to obtain the transparent conductive oxide thin film.

[0015] Specifically, in step S01, when the zinc salt is mixed with the dopant m...

Embodiment 1

[0031] Zinc acetate dihydrate (Zn(AC) 2 2H 2 O) Dissolve in isopropanol, then add diethanolamine (DEA) in an equimolar ratio to zinc acetate dihydrate, place in a 70°C water bath, and stir for 1 hour to form a transparent and homogeneous solution A. Preparation of Al 3+ Ion-doped solution, first aluminum nitrate nonahydrate (Al(NO 3 ) 3 9H 2 O, analytically pure) was dissolved in absolute ethanol to make a concentration of 0.2mol / L transparent solution B. Drop B solution into A solution, control the molar ratio of Al and Zn to 0.02, and add isopropanol to adjust the zinc acetate concentration of the solution to 0.5 mol / L. After fully stirring at 70° C. for 2 hours, a transparent and homogeneous solution was formed, which was poured into a clean jar and allowed to stand for 24 hours to obtain a sol solution for subsequent use.

[0032] Select an optical glass sheet, the size of the glass sheet is 25mm×80mm×1mm. Insert the cleaned glass sheet vertically into the prepared ...

Embodiment 2

[0035] Dissolve indium nitrate in acetylacetone, then add ethanol methyl ether in an equimolar ratio to indium nitrate, place in a 90°C water bath, and stir for 1.5h to form a transparent and homogeneous solution A. Preparation of Sn 2+ For ion-doped solution, tin nitrate was first dissolved in absolute ethanol to make a transparent solution B with a concentration of 0.5 mol / L. Drop B solution into A solution, control the molar ratio of Sn and In to 0.1, and add isopropanol to adjust the indium nitrate concentration of the solution to 0.5 mol / L. After fully stirring at 90° C. for 2 hours, a transparent and homogeneous solution was formed, which was poured into a clean jar and allowed to stand for 24 hours to obtain a sol solution for subsequent use.

[0036] Select stainless steel foil, the specification of stainless steel foil is 80mm×80mm×0.5mm. The cleaned stainless steel foil was vertically inserted into the prepared sol, and the substrate stayed in the sol for 15 second...

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Abstract

The invention relates to the semiconductor photoelectric material field, and provides a preparing method for transparent conductive oxide film. The method includes the following steps: step one, obtaining a sol solution of zinc salt or indium salt and doped metal salt, wherein, viscosity of the sol ranges from 15m Pa.s to 20 m Pa.s, concentration of zinc or indium in the zinc salt or the indium salt ranges from 0.1 mol / L to 1 mol / L, the mole ratio of zinc and the doped metal salt is between 0.001 and 0.03, and the mole ratio of indium and the doped metal salt is between 0.05 and 0.15; step two, immersing media into the sol solution and allowing the mixture to stand for 1s to 30s, pulling the media out of the sol solution at a speed of 1 cm / min to 300 cm / min, maintaining the media for 0.5 min to 30 min at a temperature in a range of 80 DEG C to 300 DEG C, and cooling the media; step three, repeating step two till the thickness of the film on the media achieves the required thickness, and obtaining the transparent conductive oxide film. The transparent conductive oxide film prepared through the method has the advantages of being high in rate of finished products, capable of preparing film with large areas, high in material using ratio, and suitable for mass production.

Description

technical field [0001] The invention belongs to the field of semiconductor photoelectric materials, and in particular relates to a preparation method of a transparent conductive oxide film. Background technique [0002] Transparent conductive oxide film (TCO) is widely used in transparent electrodes of various displays, transparent heating elements of electric cookers, and transparent electrodes of solar cells. It is mainly responsible for the collection of photocurrent, so it requires high conductivity; at the same time, The existence of TCO should minimize the absorption of the solar spectrum, so it is required to have a wide energy gap width, less absorption of visible light, and high transmittance. Currently widely used TCOs include metal-doped ZnO thin films and metal-doped In 2 o 3 thin film; the doped metals of ZnO thin film mainly include aluminum (Al), gallium (Ga), indium (In), molybdenum (Mo), etc., the representative one is aluminum doped ZnO (AZO); In 2 o 3 ...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCH01L31/022466H01L31/022483H01L31/1884
Inventor 徐东徐永任昌义
Owner 徐东
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