Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Rotary magnetic field planar target magnetic-controlled sputtering apparatus

A magnetron sputtering device and rotating magnetic field technology, applied in the field of electromechanical, can solve the problems of low target utilization, slow sputtering speed, and small uniform area of ​​sputtering

Inactive Publication Date: 2006-03-08
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF0 Cites 20 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0013] The present invention mainly aims at the deficiencies existing in existing magnetron sputtering equipment such as low target utilization rate, slow sputtering speed, and small sputtering uniform area, and proposes a sputtering area with large sputtering area, high target utilization rate, Planar magnetron sputtering coating device with fast sputtering rate and good film formation uniformity

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Rotary magnetic field planar target magnetic-controlled sputtering apparatus
  • Rotary magnetic field planar target magnetic-controlled sputtering apparatus
  • Rotary magnetic field planar target magnetic-controlled sputtering apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0033] A rotating magnetic field plane target magnetron sputtering device mainly includes a substrate tray 1, a target holder 2, a target material 3, a vacuum cavity 8, a heater 18, a thermocouple 31 and the like. There is a heater (18) above the substrate tray (1), and the substrate tray (1) and the heater (18) are fixed on the top of the vacuum cavity (8) by connecting rods (21), and can be connected by connecting rods. (17) Properly adjust the distance from the target (3); there is a thermocouple (31) between the substrate tray (1) and the heater (18). The target base (2) and the magnetic steel group (29) are located in the target inner base (23), and the target (3) is installed on the target base (2) and passed through the target pressing frame (22) and bolts (21) Fixed on the target inner seat (23); the rotating motor (12) passes through the vacuum chamber bottom plate (25) and the target inner seat (23) through the transmission shaft (11) and connects with the center of ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

This invention relates to a magnet control sputtering coating device of a rotary magnetic field plane target including a chip tray, a target base, a target material and a vacuum cavity, among which, the tray, the target base and the material are in the vacuum cavity, the tray is above the base and the material, the material is installed on the base characterizing in also including a magnetic steel group and a rotation motor, among which, the group is composed of a base plate and magnetic steels, more than one magnetic steels are set on the base eccentrically, the entire group is under the place close to the base, the rotation motor is connected with the center of the base via a driving shaft to drive rotation of the group.

Description

technical field [0001] The invention relates to a rotating magnetic field planar target magnetron sputtering device, which belongs to the technical field of electronic machinery, and in particular relates to a magnetron sputtering coating device in the electronic thin film preparation technology. Background technique: [0002] As a coating device, magnetron sputtering device is being widely used in the preparation of electronic thin films. The magnetron sputtering thin film preparation device in the existing electronic thin film preparation technology can realize the preparation of metals, non-metallic substances and compounds, etc., but there are low target utilization rates, small sputtered films, and poor uniformity. Disadvantages such as low sputtering rate. [0003] The principle of magnetron sputtering: Under the action of an electric field, electrons collide with Ar atoms during their flight to the substrate, causing them to ionize out of Ar + and a new electron, th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35
Inventor 杨传仁唐章东
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products