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A kind of equipment for preparing large-area antimony selenide thin film and its method and application

An antimony selenide, large-area technology, applied in the direction of final product manufacturing, sustainable manufacturing/processing, climate sustainability, etc., can solve problems such as inability to prepare large areas and unsatisfactory quality of antimony selenide thin films

Active Publication Date: 2021-04-20
HEBEI UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a kind of equipment for preparing large-area antimony selenide thin film and its method and application, to solve the problem of the unsatisfactory quality of antimony selenide thin film prepared by the existing carrier gas transport deposition method and the inability to prepare large area antimony selenide film problem

Method used

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  • A kind of equipment for preparing large-area antimony selenide thin film and its method and application
  • A kind of equipment for preparing large-area antimony selenide thin film and its method and application
  • A kind of equipment for preparing large-area antimony selenide thin film and its method and application

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Effect test

Embodiment 1

[0028] Such as figure 1 As shown, the equipment of the present invention can be modified on the basis of existing VTD equipment, and its structure is that a cylinder 2 is horizontally fixed in the deposition chamber 1 of the deposition equipment, and one side of the cylinder 2 is connected with the argon gas supply pipe 3 The other side of the cylinder 2 is provided with a horizontally extending elongated hole 4, the other parts of the cylinder 2 are sealed, and a cylindrical hole for containing high-purity antimony selenide particles is coaxially provided in the cylinder 2. Mesh drain 5, the mesh of which is smaller than antimony selenide particles, one end of the mesh drain 5 is connected with a rotating shaft, and the rotating shaft passes through the bearing assembly provided on the end face of the cylinder and is connected to the driving device. The mesh drain 5 can play a role in the driving device. Rotate at a constant speed in cylinder 2.

[0029] A sample stage 6 is ...

Embodiment 2

[0033] Apply the present invention to prepare large-area antimony selenide solar cell, the structure of solar cell is glass substrate, molybdenum electrode, antimony selenide film, cadmium sulfide, zinc oxide, aluminum-doped zinc oxide, silver electrode (such as image 3 shown).

[0034] Its preparation process is as follows:

[0035] (1) Preparation of the substrate

[0036] Using glass as a substrate, first soak the glass in an electronic cleaner solution for 12 hours, then take it out, rinse it with deionized water, and finally blow it dry with nitrogen.

[0037] (2) Deposit molybdenum back electrode

[0038] The Mo back electrode was prepared by magnetron sputtering technology, Ar gas was used as the reaction gas, the sputtering pressure was 0.4 Pa, and the sputtering power density was about 4 W / cm 2 , the thickness of the prepared film is about 700 nm, and the resistivity of the prepared film is about 3×10 -5 Ω·cm.

[0039] (3) Deposition of antimony selenide layer ...

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Abstract

The invention provides a device for preparing a large-area antimony selenide thin film and its method and application. The device is horizontally fixed with a cylinder in the deposition chamber of the deposition device, and one side of the cylinder is connected with an argon gas supply pipe The other side of the cylinder is provided with a long hole extending in the horizontal direction, and a cylindrical net drain for containing antimony selenide particles is coaxially arranged in the cylinder. One end of the net drain is connected to a rotating shaft and It can rotate in the cylinder; there is a sample stage at the position opposite to the long hole, and the sample stage is connected with the lifting rod and can move up and down with the lifting rod at a uniform speed. A substrate is provided, and a baffle is provided between the sample stage and the cylinder. The invention prepares a large-area antimony selenide thin film with good crystallization state, good film-forming uniformity, and small defect density by adjusting the number of up and down movements of the substrate, the temperature of the substrate and the source, and the gas flow rate of high-purity argon. , and its equipment and process are simple, which is conducive to popularization and application.

Description

technical field [0001] The invention relates to the technical field of semiconductor thin film preparation, in particular to a device for preparing a large-area antimony selenide thin film, a method and an application thereof. Background technique [0002] Antimony Selenide (Sb 2 Se 3 ), as a stable inorganic semiconductor material less affected by water and temperature, is abundant in nature. Sb 2 Se 3 The material is a quasi-direct bandgap material with a forbidden band width of about 1.2eV and an absorption coefficient greater than 105cm -1 , is a very ideal photovoltaic material. According to the Shockley-Queisser limit theory, the single-junction Sb 2 Se 3 The photoelectric conversion efficiency of solar cells is above 30%. [0003] At present, the preparation methods of high-efficiency antimony selenide solar cells are generally near space sublimation and solution spin coating. As a low-cost manufacturing method for commercial CdTe solar cells, vapor transport...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0328H01L31/0392H01L31/18
CPCH01L31/0328H01L31/0392H01L31/18Y02P70/50
Inventor 李志强郭春升梁晓杨刘涛
Owner HEBEI UNIVERSITY
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