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48 results about "Rf power transistors" patented technology
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RF power transistor circuit
A radio frequency (RF) power transistor circuit includes a power transistor and a decoupling circuit. The power transistor has a control electrode coupled to an input terminal for receiving an RF input signal, a first current electrode for providing an RF output signal at an output terminal, and a second current electrode coupled to a power supply voltage terminal. The decoupling circuit includes a first inductive element, a first resistor, and a first capacitor coupled together in series between the control electrode of the first power transistor and the power supply voltage terminal. The first decoupling circuit is for dampening a resonance at a frequency lower than an RF frequency.
Owner:NXP USA INC
Radio-Frequency Power Amplifier with Fast Envelope Tracking
ActiveUS20120062323A1Attenuation bandwidthIncrease speedPower amplifiersAmplifier detailsAudio power amplifierLow-pass filter
A radio-frequency power amplifier with envelope tracking, comprising: a power RF amplifying device for amplifying a RF signal; and a switching DC / DC converter, comprising a switching device and a rectifying device, for providing said power RF amplifying device with a DC power supply at a voltage level proportional to an envelope of said RF signal; wherein said switching device is a RF power transistor; characterized in that said rectifying device, and preferably also said power RF amplifying device, is also a transistor of a same technology, connected as a two-terminal device. Preferably, said power RF amplifying device is also a transistor of said same technology. A low-pass filter can also be provided for reducing the bandwidth of the envelope signal on which the PWM signal driving the DC / DC converter depends.
Owner:EUROPEAN SPACE AGENCY
RF power transistor circuit
A radio frequency (RF) power transistor circuit includes a power transistor and a decoupling circuit. The power transistor has a control electrode coupled to an input terminal for receiving an RF input signal, a first current electrode for providing an RF output signal at an output terminal, and a second current electrode coupled to a power supply voltage terminal. The decoupling circuit includes a first inductive element, a first resistor, and a first capacitor coupled together in series between the control electrode of the first power transistor and the power supply voltage terminal. The first decoupling circuit is for dampening a resonance at a frequency lower than an RF frequency.
Owner:NXP USA INC
Radio-frequency power amplifier with fast envelope tracking
ActiveCN102403964ACompact assemblyMinimized parasitic componentsHigh frequency amplifiersPower amplifiersAudio power amplifierLow-pass filter
Owner:EUROPEAN SPACE AGENCY
VHF/UHF broadband high power amplifier module
InactiveUS20040130396A1Low costEfficient heat dissipationPush-pull amplifiersPhase-splittersAudio power amplifierPush pull
A VHF / UHF broadband high power amplifier module of the present invention comprising: a broad / narrow band attenuator for attenuating input signal source; a broadband matcher coupled to said broad / narrow band attenuator for impedance matching said attenuated input signal source; a micro-strip line circuit coupled to said broad band matcher to perform first impedance transformation; a power transistor coupled to said micro-strip line circuit to perform AB class push pull amplification; a broad band matcher coupled to said power transistor and a load to perform second impedance transformation of said load; and said transformed low impedance to become the load of said Rf power transistor.
Owner:CHEN SOU BIN
RF power transistor with large periphery metal-insulator-silicon shunt capacitor
ActiveUS20080149981A1TransistorSemiconductor/solid-state device detailsElectrical resistance and conductanceShunt capacitors
An integrated MIS capacitor structure comprises a high quality factor shunt capacitor. The integrated MIS capacitor is configured with a large periphery and an external ground via to mitigate resistive losses in the bottom plate of the MIS shunt capacitor.
Owner:NXP USA INC
Packaged RF power transistor device having next to each other a ground and a video lead for connecting a decoupling capacitor, RF power amplifier
ActiveUS20150156910A1Improve performancePath smallHigh frequency amplifiersSemiconductor/solid-state device detailsElectricityResonance
A packaged Radio Frequency power transistor device is described, which comprises a component carrier a die comprising a semiconductor transistor having a source, a gate and a drain, wherein the die is mounted at the component carrier, a ground connection being electrically connected to the source, an output lead being electrically connected to the drain, a resonance circuit being electrically inserted between the output lead and the ground connection, and a video lead being electrically connected to the resonance circuit. The video lead is configured for being connected to a first contact of a decoupling capacitor. The ground connection is configured for being connected to a second contact of the decoupling capacitor. It is further described a RF power amplifier comprising such a packaged Radio Frequency power transistor device.
Owner:AMPLEON NETHERLANDS
RF power transistor structure and a method of forming the same
In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a method includes forming a portion of the unidirectional transistor and a portion of a bidirectional transistor in or over a semiconductor material simultaneously. Other embodiments are described and claimed.
Owner:XENOGENIC DEV LLC
Structure for a radio frequency power amplifier module within a radio frequency power amplifier package
ActiveUS9401682B2Amplifier modifications to reduce temperature/voltage variationSemiconductor/solid-state device detailsElectricityAudio power amplifier
A RF power amplifier module comprises a die with a RF power transistor and the RF power transistor comprises a control terminal, a transistor output terminal and a transistor reference terminal. The RF power amplifier module further comprises a module input terminal, a module output terminal and at least two module reference terminals being electrically coupled to the control terminal, the transistor output terminal and the transistor reference terminal, respectively. The RF power amplifier module further comprises an electrically isolating layer and a heat conducting element. The die is in thermal contact with the heat conducting element via the electrically isolating layer in order to transfer heat during operation of the RF power transistor to the heat conducting element.
Owner:NXP USA INC
RF power transistor
A radio frequency (RF) power transistor includes: a semiconductor heterostructure that includes an undoped barrier layer and an active layer and that is formed with a continuous two dimensional electron gas (2DEG) channel having an ohmic source-aligned region, an ohmic drain-aligned region and a Schottky-aligned region; agate electrode; and source and drain electrodes. One of the source and drain electrodes includes an ohmic contact and a Schottky contact that extends from the ohmic contact toward the gate electrode. The 2DEG channel is normally on and extends continuously from the ohmic source-aligned region to the ohmic drain-aligned region. The Schottky contact overlaps and is capacitively coupled to the Schottky-aligned region of the 2DEG channel.
Owner:NATIONAL TSING HUA UNIVERSITY
High-stability radio power amplifier monolithic integrated circuit
InactiveCN102931922AIncrease the real part impedanceImprove stabilityAmplifier with semiconductor-devices/discharge-tubesAmplifier modifications to reduce detrimental impedenceAudio power amplifierSpiral inductor
The invention discloses a high-stability radio power amplifier monolithic integrated circuit belonging to the technical field of radio frequency power amplifiers, in particular relates to a high-stability radio power amplifier monolithic integrated circuit. The invention provides the high-stability radio power amplifier monolithic integrated circuit with low layout complexity. The high-stability radio power amplifier monolithic integrated circuit comprises a radio frequency power transistor, and is structurally characterized in that the input end of the radio frequency power transistor is serially connected with an in-chip plane spiral inductor.
Owner:SHENYANG ZHONGKE MICROELECTRONICS
Soldering of semiconductor chip to substrate
InactiveCN1321409ALower freezing temperatureDetermine the thicknessPrinted circuit assemblingSolid-state devicesSemiconductor chipRf power transistors
The present invention relates to a method of soldering a semiconductor chip to a substrate, such as to a capsule in an RF-power transistor, for instance. The semiconductor chip is provided with an adhesion layer consisting of a first material composition. A solderable layer consisting of a second material composition is disposed on this adhesion layer. An antioxidation layer consisting of a third material composition is disposed on said solderable layer. The antioxidation layer is coated with a layer of gold-tin solder. The chip is placed on a solderable capsule surface, via said gold-tin solder. The capsule and chip are exposed to an inert environment to which a reducing gas is delivered and the capsule and chip are subjected to a pressure substantially beneath atmospheric pressure whilst the gold-tin solder is heated to a temperature above its melting point. The gas pressure is increased whilst the gold-tin solder is molten and the temperature is lowered when a predetermined gas pressure is exceeded, so that the gold-tin solder will solidify.
Owner:INFINEON TECH AG
RF power transistors with impedance matching circuits, and methods of manufacture thereof
ActiveCN107070418ATelevision system detailsHigh frequency amplifiersShunt capacitorsAudio power amplifier
Embodiments of an RF amplifier include a transistor with a control terminal and first and second current carrying terminals, and a shunt circuit coupled between the first current carrying terminal and a ground reference node. The shunt circuit includes a first shunt inductance, a second shunt inductance, and a shunt capacitor coupled in series. The second shunt inductance and the shunt capacitor form a series resonant circuit in proximity to a center operating frequency of the amplifier, and an RF cold point node is present between the first and second shunt inductances. The RF amplifier also includes a video bandwidth circuit coupled between the RF cold point node and the ground reference node.
Owner:NXP USA INC
Multi-layer thick-film RF package
ActiveUS20110117705A1Improve conductivityPromote migrationSemiconductor/solid-state device detailsSolid-state devicesRf power transistorsOptoelectronics
A method for producing a multi-layer thick-film RF package includes forming conductive layer(s) including one or more source portions, one or more gate portions, and / or one or more drain portions on a ceramic substrate. The conductive layer(s) and the ceramic substrate are fired or otherwise heated in a furnace until sintered. Thereafter, a dielectric pattern is formed on the conductive layer(s) and fired or otherwise heated in the furnace until sintered. Then, a conductive bridge is formed on the dielectric pattern, over the one or more drain portions and between the one or more source portions, which is then fired until sintered in the furnace. As a result, a monolithic, single-piece, sintered, high-frequency RF power transistor package having circuit features including a highly conductive and low capacitive bridge is produced.
Owner:MICROSEMI
Active element bias circuit for RF power transistor input
InactiveUS6893101B2Lower impedanceImproved predistortion compensationHigh frequency amplifiersGain controlRf power transistorsEngineering
A biasing circuit for biasing a device (e.g., a GaAs field effect transistor) used for amplifying a radio frequency (RF) signal, the biasing circuit including an active element in series with a resistor, the active element providing a relatively low impedance over a bandwidth comparable to an amplitude modulation bandwidth of the RF signal, such that a DC bias voltage applied at the active element has a fixed DC voltage at the resistor input, i.e., without any memory effect, thereby allowing for improved predistortion compensation of non-linear voltage of the RF signal.
Owner:TELEFON AB LM ERICSSON (PUBL)
Multi-layer thick-film RF package
ActiveUS8034666B2Promote migrationImprove conductivitySemiconductor/solid-state device detailsSolid-state devicesRf power transistorsOptoelectronics
Owner:MICROSEMI CORP
Inductively coupled transformer with tunable impedance match network
ActiveCN105871343AMultiple-port networksSemiconductor/solid-state device detailsCapacitanceElectricity
The invention relates to a packaged RF power transistor. The packaged RF power transistor includes an RF input lead, a DC gate bias lead, an RF power transistor comprising gate, source and drain terminals, and an input match network. The input match network includes a primary inductor electrically connected to the RF input lead, a secondary inductor electrically connected to the gate terminal and to the DC gate bias lead, and a tuning capacitor electrically connected to the RF input lead and physically disconnected from the gate terminal. The input match network is configured to block DC voltages between the RF input lead and the gate terminal and to propagate AC voltages in a defined frequency range from the RF input lead to the gate terminal. The tuning capacitor is configured to adjust a capacitance of the input match network based upon a variation in DC voltage applied to the RF input lead.
Owner:沃孚半导体公司
RF power transistor
InactiveCN105006469ASemiconductor/solid-state device detailsSolid-state devicesPower flowDevice material
A semiconductor device including an RF power transistor in a semiconductor package is described. The semiconductor device comprises a gate lead frame, a drain lead frame, a die including a power transistor having a gate and a drain and a flange. A gate impedance matching network is connected between the gate lead frame and the gate. A drain impedance matching network is connected between the drain lead frame and the drain and includes a drain lead frame bond wire between the drain lead frame and the drain. A first conducting element is connected between the die and the flange and is arranged to provide a current path along which a return current can flow in use to lower an inductance associated with the drain lead frame bond wire.
Owner:AMPLEON NETHERLANDS
Rf-power device
InactiveUS20120168840A1Reduce heatEasy to useTransistorSemiconductor/solid-state device detailsRf power transistorsImpedance matching
An RF-power device includes a semiconductor substrate having a plurality of active regions arranged in an array. Each active region includes one or more RF-power transistors. The active regions are interspersed with inactive regions for reducing mutual heating of the RF-power transistors in separate active regions. The devices also includes at least one impedance matching component located in one of the inactive regions of the substrate.
Owner:AMPLEON NETHERLANDS
Integrated Passive Device for RF Power Amplifier Package
ActiveUS20180026000A1Less spaceIncrease lossMultiple-port networksAmplifier modifications to reduce non-linear distortionCapacitanceResonance
The present disclosure relates to a radio frequency (RF) power transistor package. It further relates to a mobile telecommunications base station comprising such an RF power transistor package, and to an integrated passive die suitable for use in an RF power amplifier package. In example embodiments, an in-package impedance network is used that is connected to an output of the RF power transistor arranged inside the package. This network comprises a first inductive element having a first and second terminal, the first terminal being electrically connected to the output of the RF transistor, a resonance unit electrically connected to the second terminal of the first inductive element, and a second capacitive element electrically connected in between the resonance unit and ground, where the first capacitive element is arranged in series with the second capacitive element.
Owner:AMPLEON NETHERLANDS
Power amplifier
InactiveCN101202256ASemiconductor/solid-state device detailsSolid-state devicesAudio power amplifierRf power transistors
An RF power amplifier including a single piece heat sink and an RF power transistor die mounted directly onto the heat sink.
Owner:INFINEON TECH AG
Drain lag compensation circuit for RF power transistors
InactiveUS20180241387A1Compensation effectTransistorNegative-feedback-circuit arrangementsRf power transistorsTransistor circuits
A transistor circuit includes a main transistor having a gate terminal, a drain terminal and a source terminal, and a drain lag compensation circuit configured to sense a drain voltage on the drain terminal of the main transistor and to control a drain current through the main transistor based on the sensed drain voltage. The drain lag compensation circuit may include a reference transistor having a drain terminal coupled to a drain terminal of the main transistor, and a sensing circuit that is coupled to a source terminal of the reference transistor and provides a control voltage to a gate terminal of the main transistor. The reference transistor may be thermally coupled to the main transistor. The main transistor may be a GaN RF power transistor.
Owner:MACOM TECH SOLUTIONS HLDG INC
RF power transistors with impedance matching circuits, and methods of manufacture thereof
ActiveCN109861654AHigh frequency amplifiersSemiconductor/solid-state device detailsShunt capacitorsHemt circuits
Owner:NXP USA INC
Packaged RF power transistor device having next to each other a ground and a video lead for connecting a decoupling capacitor, RF power amplifier
ActiveUS9820401B2Improve performancePath smallHigh frequency amplifiersSemiconductor/solid-state device detailsResonanceRf power transistors
A packaged Radio Frequency power transistor device is described, which comprises a component carrier a die comprising a semiconductor transistor having a source, a gate and a drain, wherein the die is mounted at the component carrier, a ground connection being electrically connected to the source, an output lead being electrically connected to the drain, a resonance circuit being electrically inserted between the output lead and the ground connection, and a video lead being electrically connected to the resonance circuit. The video lead is configured for being connected to a first contact of a decoupling capacitor. The ground connection is configured for being connected to a second contact of the decoupling capacitor. It is further described a RF power amplifier comprising such a packaged Radio Frequency power transistor device.
Owner:AMPLEON NETHERLANDS
Soldering of semiconductor chip to substrate
InactiveCN1196389CLower freezing temperatureDetermine the thicknessPrinted circuit assemblingSolid-state devicesRf power transistorsSemiconductor chip
Owner:INFINEON TECH AG
Passive spectrum control for pulsed RF power amplifiers
ActiveUS7868703B2Increase the areaAlleviates and eliminates shortcomingHigh frequency amplifiersAmplifier combinationsBandpass filteringFrequency spectrum
A multi-stage RF power amplifier including passive circuitry for frequency spectrum control. In one example, a multi-stage RF power amplifier includes a first RF power transistor, a second RF power transistor, and a passive combination bandpass filter and impedance matching network coupled between the first RF power transistor and the second RF power transistor.
Owner:RAYTHEON CO
RF-power device
InactiveUS8766427B2Reducing mutual heating of RF-powerReduce heatTransistorSemiconductor/solid-state device detailsRf power transistorsEngineering
An RF-power device includes a semiconductor substrate having a plurality of active regions arranged in an array. Each active region includes one or more RF-power transistors. The active regions are interspersed with inactive regions for reducing mutual heating of the RF-power transistors in separate active regions. The devices also includes at least one impedance matching component located in one of the inactive regions of the substrate.
Owner:AMPLEON NETHERLANDS
Transistor-Eingangsanpassung mit Transformator
An RF power transistor package includes an input lead, an output lead, and an RF power transistor having a gate, a drain and a defined gain over an RF frequency range for which the RF power transistor is configured to operate. The RF power transistor package further includes a transformer electrically isolating and inductively coupling the gate of the RF power transistor to the input lead. The transformer is configured to block signals below the RF frequency range of the RF power transistor and pass signals within the RF frequency range of the RF power transistor. The RF power transistor package also includes a DC feed terminal for providing DC bias to the gate of the RF power transistor.
Owner:沃孚半导体公司
rf power transistor with impedance matching circuit and its manufacturing method
ActiveCN107070418BTelevision system detailsHigh frequency amplifiersAudio power amplifierRf power transistors
An embodiment of an RF amplifier includes a transistor having a control terminal and first and second current-carrying terminals, and a shunt circuit coupled between the first current-carrying terminal and a ground reference node. The shunt circuit includes a first shunt inductor, a second shunt inductor, and a shunt capacitor coupled in series. The second shunt inductor and the shunt capacitor form a series resonant circuit near a center operating frequency of the amplifier, and an RF cold spot node exists between the first and second shunt inductors. The RF amplifier also includes a video bandwidth circuit coupled between the RF cold-spot node and the ground reference node.
Owner:NXP USA INC
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