48 results about "Rf power transistors" patented technology

A radio frequency (RF) power transistor circuit includes a power transistor and a decoupling circuit. The power transistor has a control electrode coupled to an input terminal for receiving an RF input signal, a first current electrode for providing an RF output signal at an output terminal, and a second current electrode coupled to a power supply voltage terminal. The decoupling circuit includes a first inductive element, a first resistor, and a first capacitor coupled together in series between the control electrode of the first power transistor and the power supply voltage terminal. The first decoupling circuit is for dampening a resonance at a frequency lower than an RF frequency.

A radio-frequency power amplifier with envelope tracking, comprising: a power RF amplifying device for amplifying a RF signal; and a switching DC / DC converter, comprising a switching device and a rectifying device, for providing said power RF amplifying device with a DC power supply at a. voltage level proportional to an envelope of said RF signal; wherein said switching device is a RF power transistor; characterized in that said rectifying device, and preferably also said power RF amplifying device, is also a transistor of a same technology, connected as a two-terminal device. Preferably, said power RF amplifying device is also a transistor of said same technology. A low-pass filter can also be provided for reducing the bandwidth of the envelope signal on which the PWM signal driving the DC / DC converter depends.

A packaged Radio Frequency power transistor device is described, which comprises a component carrier a die comprising a semiconductor transistor having a source, a gate and a drain, wherein the die is mounted at the component carrier, a ground connection being electrically connected to the source, an output lead being electrically connected to the drain, a resonance circuit being electrically inserted between the output lead and the ground connection, and a video lead being electrically connected to the resonance circuit. The video lead is configured for being connected to a first contact of a decoupling capacitor. The ground connection is configured for being connected to a second contact of the decoupling capacitor. It is further described a RF power amplifier comprising such a packaged Radio Frequency power transistor device.

A RF power amplifier module comprises a die with a RF power transistor and the RF power transistor comprises a control terminal, a transistor output terminal and a transistor reference terminal. The RF power amplifier module further comprises a module input terminal, a module output terminal and at least two module reference terminals being electrically coupled to the control terminal, the transistor output terminal and the transistor reference terminal, respectively. The RF power amplifier module further comprises an electrically isolating layer and a heat conducting element. The die is in thermal contact with the heat conducting element via the electrically isolating layer in order to transfer heat during operation of the RF power transistor to the heat conducting element.

A radio frequency (RF) power transistor includes: a semiconductor heterostructure that includes an undoped barrier layer and an active layer and that is formed with a continuous two dimensional electron gas (2DEG) channel having an ohmic source-aligned region, an ohmic drain-aligned region and a Schottky-aligned region; agate electrode; and source and drain electrodes. One of the source and drain electrodes includes an ohmic contact and a Schottky contact that extends from the ohmic contact toward the gate electrode. The 2DEG channel is normally on and extends continuously from the ohmic source-aligned region to the ohmic drain-aligned region. The Schottky contact overlaps and is capacitively coupled to the Schottky-aligned region of the 2DEG channel.

A method for producing a multi-layer thick-film RF package includes forming conductive layer(s) including one or more source portions, one or more gate portions, and / or one or more drain portions on a ceramic substrate. The conductive layer(s) and the ceramic substrate are fired or otherwise heated in a furnace until sintered. Thereafter, a dielectric pattern is formed on the conductive layer(s) and fired or otherwise heated in the furnace until sintered. Then, a conductive bridge is formed on the dielectric pattern, over the one or more drain portions and between the one or more source portions, which is then fired until sintered in the furnace. As a result, a monolithic, single-piece, sintered, high-frequency RF power transistor package having circuit features including a highly conductive and low capacitive bridge is produced.

An integrated MIS capacitor structure has a bottom electrode, a capacitor dielectric overlying the bottom electrode, and a plurality of capacitor top plates overlying the capacitor dielectric. In one form each capacitor top plate has a principal dimension and a lesser dimension, wherein individual capacitor top plates of the plurality are arranged proximate and adjacent to one another in an array along respective principal dimensions thereof. The bottom electrode is shared among the plurality of capacitor top plates. At least one of a plurality of conductive stripes is positioned on opposite sides of each capacitor top plate along the principal dimension of a respective capacitor top plate. The structure also has a grounded top metal layer and an inter-level dielectric. An external ground via is disposed adjacent at least one side edge of the plurality of capacitor top plates.

The invention relates to RF power transistors with impedance matching circuits, and methods of manufacture thereof. Embodiments of an RF amplifier include a transistor (120, 220) with a control terminal and first and second current carrying terminals, and a shunt circuit coupled between the first current carrying terminal and a ground reference node. The shunt circuit is an output pre-match impedance conditioning shunt circuit, which includes a first shunt inductance (134, 234, 434), a second shunt inductance (135, 135,235, 435, 935, 935') and a shunt capacitor (142, 142',342, 442) coupled inseries. The first shunt inductance (134, 234, 434) comprises a plurality of bondwires coupled between the first current carrying terminal and the second shunt inductance, and the second shunt inductance (135, 135',235, 435, 935, 935') comprises an integrated inductor coupled between the first shunt inductance and a first terminal of the shunt capacitor (142,142',342, 442). The shunt capacitor is configured to provide capacitive harmonic control of an output of the transistor (120, 220).

A packaged Radio Frequency power transistor device is described, which comprises a component carrier a die comprising a semiconductor transistor having a source, a gate and a drain, wherein the die is mounted at the component carrier, a ground connection being electrically connected to the source, an output lead being electrically connected to the drain, a resonance circuit being electrically inserted between the output lead and the ground connection, and a video lead being electrically connected to the resonance circuit. The video lead is configured for being connected to a first contact of a decoupling capacitor. The ground connection is configured for being connected to a second contact of the decoupling capacitor. It is further described a RF power amplifier comprising such a packaged Radio Frequency power transistor device.

The present invention relates to a method of soldering a semiconductor chip to a substrate, such as to a capsule in an RF-power transistor, for instance. The semiconductor chip is provided with an adhesion layer consisting of a first material composition. A solderable layer consisting of a second material composition is disposed on this adhesion layer. An antioxidation layer consisting of a third material composition is disposed on said solderable layer. The antioxidation layer is coated with a layer of gold-tin solder. The chip is placed on a solderable capsule surface, via said gold-tin solder. The capsule and chip are exposed to an inert environment to which a reducing gas is delivered and the capsule and chip are subjected to a pressure substantially beneath atmospheric pressure whilst the gold-tin solder is heated to a temperature above its melting point. The gas pressure is increased whilst the gold-tin solder is molten and the temperature is lowered when a predetermined gas pressure is exceeded, so that the gold-tin solder will solidify.

A multi-stage RF power amplifier including passive circuitry for frequency spectrum control. In one example, a multi-stage RF power amplifier includes a first RF power transistor, a second RF power transistor, and a passive combination bandpass filter and impedance matching network coupled between the first RF power transistor and the second RF power transistor.

An RF-power device includes a semiconductor substrate having a plurality of active regions arranged in an array. Each active region includes one or more RF-power transistors. The active regions are interspersed with inactive regions for reducing mutual heating of the RF-power transistors in separate active regions. The devices also includes at least one impedance matching component located in one of the inactive regions of the substrate.

An embodiment of an RF amplifier includes a transistor having a control terminal and first and second current-carrying terminals, and a shunt circuit coupled between the first current-carrying terminal and a ground reference node. The shunt circuit includes a first shunt inductor, a second shunt inductor, and a shunt capacitor coupled in series. The second shunt inductor and the shunt capacitor form a series resonant circuit near a center operating frequency of the amplifier, and an RF cold spot node exists between the first and second shunt inductors. The RF amplifier also includes a video bandwidth circuit coupled between the RF cold-spot node and the ground reference node.