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High-stability radio power amplifier monolithic integrated circuit

A monolithic integrated circuit, radio frequency power technology, applied in amplifiers, amplifiers with semiconductor devices/discharge tubes, improved amplifiers to reduce the harmful effects of internal resistance, etc., can solve the problem of increased complexity of layout layout, increased layout area, Large area and other issues, to achieve the effect of simplifying the layout layout, reducing the number of devices, and reducing the difficulty

Inactive Publication Date: 2013-02-13
SHENYANG ZHONGKE MICROELECTRONICS
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  • Abstract
  • Description
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AI Technical Summary

Problems solved by technology

For the former case, small resistance values ​​such as resistors below 5 ohms, some processes cannot provide resistance of this magnitude, and multiple resistors may be connected in parallel, which will add complexity to the layout and occupy a larger area
In the latter case, the values ​​of resistor R and capacitor C need to be adjusted, and in order to minimize the attenuation of RF power, a larger capacitor value is generally required, which will undoubtedly increase the layout area

Method used

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  • High-stability radio power amplifier monolithic integrated circuit
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  • High-stability radio power amplifier monolithic integrated circuit

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Embodiment Construction

[0023] Such as figure 1 As shown, the present invention includes a radio frequency power transistor 102, and the input end of the radio frequency power transistor 102 is connected in series with an on-chip planar spiral inductor 101 .

[0024] One end of the on-chip planar spiral inductor 101 is connected to the input end of the radio frequency power transistor 102, and the other end is connected to the on-chip input matching circuit port. The on-chip planar spiral inductor 101 of the present invention is connected in series with the input end of the radio frequency power transistor 102 and is a part of the matching circuit, and its impedance value directly affects the impedance of the input end of the radio frequency power amplifier.

[0025] Such as figure 2 As shown, the inductance value of the on-chip planar spiral inductor 101 is Ls, the parasitic resistance is Rs, the parasitic inter-line coupling capacitance Cp, Cox1 is the oxide layer capacitance between the m...

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Abstract

The invention discloses a high-stability radio power amplifier monolithic integrated circuit belonging to the technical field of radio frequency power amplifiers, in particular relates to a high-stability radio power amplifier monolithic integrated circuit. The invention provides the high-stability radio power amplifier monolithic integrated circuit with low layout complexity. The high-stability radio power amplifier monolithic integrated circuit comprises a radio frequency power transistor, and is structurally characterized in that the input end of the radio frequency power transistor is serially connected with an in-chip plane spiral inductor.

Description

technical field [0001] The invention belongs to the technical field of radio frequency power amplifiers, in particular to a monolithic integrated circuit of a radio frequency power amplifier with high stability. Background technique [0002] As a key component of the front end of the wireless transmission system, the RF power amplifier's performance directly affects the performance of the front end of the transmission. The development of power amplifiers must not only meet the requirements of gain, power, linearity, efficiency and other indicators, but also consider the prerequisites for work, that is, stability. [0003] When designing a power amplifier monolithic integrated circuit (MMIC), in order to achieve the required gain and power, it is necessary to use a multi-stage cascaded form. For example, for a three-stage cascade, the three stages are respectively a driver stage, a gain stage, and a power output stage. According to the characteristics of each stage, the par...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/08H03F3/195H03F3/213
Inventor 郝明丽
Owner SHENYANG ZHONGKE MICROELECTRONICS
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