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RF power transistor

A technology of power transistors and semiconductors, which is applied to amplifiers with semiconductor devices/discharge tubes, semiconductor devices, and electric solid-state devices, etc., and can solve problems such as the inability of impedance matching networks to work.

Inactive Publication Date: 2015-10-28
AMPLEON NETHERLANDS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, an impedance matching network that provides adequate impedance matching at a first frequency may not work at a different frequency

Method used

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Examples

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Embodiment Construction

[0053] Hereinafter, it will be appreciated that when elements are described as being connected or electrically connected, that connection may be direct or indirect via one or more intermediate parts, components or elements, unless the context clearly dictates otherwise. Furthermore, unless the context clearly indicates otherwise, where a component is connected between a first and second component, the component may only be located between the first and second components and not necessarily extend from the first component to the second component. Two parts.

[0054] refer to figure 1 , shows a perspective view of the components of the RF power transistor assembly 100 of the semiconductor device according to the first embodiment of the present invention. The RF power transistor assembly includes a die 402 of semiconductor transistors. In various embodiments, a die may include one transistor, two transistors, or four transistors, although a greater or lesser number of transisto...

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Abstract

A semiconductor device including an RF power transistor in a semiconductor package is described. The semiconductor device comprises a gate lead frame, a drain lead frame, a die including a power transistor having a gate and a drain and a flange. A gate impedance matching network is connected between the gate lead frame and the gate. A drain impedance matching network is connected between the drain lead frame and the drain and includes a drain lead frame bond wire between the drain lead frame and the drain. A first conducting element is connected between the die and the flange and is arranged to provide a current path along which a return current can flow in use to lower an inductance associated with the drain lead frame bond wire.

Description

technical field [0001] The invention relates to an RF power transistor, in particular to impedance matching of the RF power transistor. Background technique [0002] RF power transistors are used to process higher frequency electrical signals in higher power electronic applications. For example, RF power transistors may be used in RF power amplifiers. Such power amplifiers have a wide range of applications, including use in base stations for wireless or cellular telephone networks. [0003] Other applications for RF power transistors include broadcast infrastructure, radar and automotive ignition. [0004] Impedance matching can be used to improve the performance of an electronic circuit by matching the impedance presented by an electronic component to other components of the circuit, for example, matching the impedance presented by a load to a signal source. Impedance matching can be used in power electronics applications to improve the passage of electrical energy throu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/64
CPCH01L23/49589H01L23/4952H01L23/64H01L23/66H01L24/49H01L29/7817H01L2223/6611H01L2223/6655H01L2924/19107H03F1/565H03F2200/387H01L2224/05599H01L2224/85399H03F3/193H01L24/48H01L2924/00014H01L24/45H01L2224/45124H01L2224/48097H01L2224/4909H01L2224/48096H01L2224/48195H01L2224/48247H01L2224/49109H01L2224/49175H01L2224/45015H01L2924/207
Inventor 诸毅
Owner AMPLEON NETHERLANDS
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