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Power amplifier

A technology for power amplifiers and power transistors, which is applied in the manufacture of electric solid-state devices, semiconductor devices, semiconductor/solid-state devices, etc., and can solve problems such as reliability doubts and thermal performance effects

Inactive Publication Date: 2008-06-18
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There are doubts about the reliability of this method due to the expansion properties of the heat sink and solder, which in turn affects thermal performance

Method used

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Embodiment Construction

[0014] In one embodiment, an RF power amplifier includes a frame configuration including an insulating dielectric frame and conductive input and output transmission leads attached to the frame, wherein the frame configuration is secured on top of a monolithic heat sink, and Encapsulated RF power transistor die. The RF power transistor die may further include a capacitor electrically coupled to the input and output leads. The RF power amplifier may further include a cover placed on top of the frame arrangement. The RF power amplifier may further include at least one printed circuit board placed over the heat sink for electrical connection with the input and output transmission lines. The heat sink may have a surface shaped to accommodate the amplifier design. This surface can be shaped to form the base. The heat sink in one embodiment may have a flat top surface including a base having a height to accommodate a printed circuit board. This configuration also satisfies RF req...

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PUM

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Abstract

An RF power amplifier including a single piece heat sink and an RF power transistor die mounted directly onto the heat sink.

Description

technical field [0001] The present invention relates to power amplifiers. Background technique [0002] In the current state of the art, RF power amplifiers consist of power transistor packages mounted directly onto the main amplifier heat sink and connected to a printed circuit board (PCB). FIG. 1 shows a typical basic configuration 100 . A portion of the main amplifier heat sink 110, portions 130a and 130b of the amplifier PCB, and RF power transistor 140 are shown. The RF power package also has its own integral heat sink 120 . FIG. 2 shows the RF power package 140 with the lid removed. The basic package consists of a base heat sink 120, to which is attached a dielectric insulating frame 150, to which in turn input (gate) 170a and output (drain) 170b leads are attached, the two Both are electrically in contact with the power amplifier system. The heat sink 120 serves as the source contact of the transistor device. To complete the device, a thinned transistor die 160 ...

Claims

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Application Information

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IPC IPC(8): H01L23/36H01L23/367H01L21/50H01L21/60H01L23/488
CPCH01L2924/0002H01L2223/6644H01L23/3675Y10T29/49121Y10T29/49156H01L2924/00
Inventor D·富尔克斯B·格里斯沃尔德H·霍耶
Owner INFINEON TECH AG
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