The present invention discloses a high-conversion-efficiency potential-induced degradation (PID)-resisting crystalline silicon solar cell. The solar cell comprises a silicon wafer, and is characterized in that a high refractive index silicon nitride passivation layer, a grapheme conducting layer and a low refractive index silicon nitride passivation layer, which are arranged in turn on a front face of the silicon wafer. Meanwhile, a manufacturing method of the above solar cell is also provided, and comprises the steps of selecting the silicon wafer and carrying out texturization, diffusion and post cleaning; depositing the high refractive index silicon nitride passivation layer on the front face of the silicon wafer, the refractive index being 2.2-2.3 and the film thickness being 1-10 nm; spin coating a grapheme dispersion liquid on the silicon nitride, and then carrying out follow-up drying to form the grapheme conducting layer, the thickness being 1-10 nm; depositing the low refractive index silicon nitride passivation layer on the grapheme conducting layer, the refractive index being 2.0-2.1 and the film thickness being 60-80 nm; and completing back electrode, back electric field and positive electrode printing, drying and sintering, thus to form the cell. The crystalline silicon solar cell provided by the present invention has excellent PID-resisting performance and high battery conversion efficiency.