136 results about "Potential induced degradation" patented technology

Glass coating materials and methods are disclosed for the coating of glass substrates used in the manufacturer of photovoltaic solar modules such that the coating enhances the reliability of the module by reducing its susceptibility to potential induced degradation (PID). Coating materials are disclosed that reduce soiling on the front surface of the glass; that increase the surface resistivity of the glass and that repel moisture and that seal the surface from the ingress of moisture. Further electrically conductive coatings are disclosed that reduce the electric field between the front and back surfaces of the glass and hence reduce ion mobility within the glass and transport from the interior glass surface to the solar cell. There are additional configuration choices for fine tuning associated with separately optimizing the exterior and interior glass coating. Finally, coating processes and methods are disclosed for coating glass substrates with the disclosed materials.

The invention discloses an EVA packaging adhesive film for resisting potential-induced degradation (PID) of a photovoltaic module. The adhesive film is mainly used in the field of photovoltaic module packaging. The EVA packaging adhesive film for resisting potential-induced degradation of a photovoltaic module is prepared from the following raw materials: by weight, 100 parts of ethene-vinyl acetate copolymer, 0.2-1.5 parts of an initiator, 0.1-0.5 part of an anti-oxidant, 0.1-0.5 part of an ultraviolet absorber, 0.1-0.5 part of a light stabilizer, 0.1-1.0 part of a tackifier, and 0.1-1 part of a metal ion capture agent. According to the EVA packaging adhesive film for resisting potential-induced degradation of the photovoltaic module, by adding the metal ion capture agent into a common EVA packaging adhesive film, mobility of metal ions is reduced, and the anti-PID characteristic of the photovoltaic module is raised from the source. In addition, the method is simple and the cost is low, so as to help further popularization of a photovoltaic product.

The invention discloses a test method of PID (Potential-Induced Degradation) of a solar cell module. The test method comprises the following steps of: (1) testing and recording initial data of a tested solar cell module; (2) installing the tested solar cell module in a high-temperature and low-temperature experimental environment box and carrying out insulated treatment between the tested solar cell module and the high-temperature and low-temperature experimental environment box; (3) polarly connecting the anode and the cathode of the tested solar cell module, which are subjected to short-circuited connection, with the cathode of high-voltage loading equipment, and connecting a frame of the solar cell module with the anode of the high-voltage loading equipment; (4) starting the high-temperature and low-temperature experimental environment box, starting the high-voltage loading equipment and debugging the high-voltage loading equipment to the output voltage value of 600-1000V, and simultaneously starting a current monitor for carrying out electric leakage monitoring; (6) testing and recording final data of the tested solar cell module; (7) comparing the initial data with the final data of the tested solar cell module and evaluating power degradation; and (8) finishing the test.

Embodiments of the present invention help prevent Potential-Induced Degradation (PID) in solar cell modules. A solar cell module according to one embodiment of the present invention comprises a glass sheet, a frame covering at least a portion of the glass sheet, a plurality of solar cells at least partially covered by the glass sheet, and a hydrophobic coating covering at least a portion of the frame and at least a portion of the glass sheet.

The invention discloses an anti-PID (potential induced degradation) polyolefin adhesive film for a solar cell module. The anti-PID adhesive film is an A / B / A three-layer film; the mass ratio of three layers A, B and A is (10-20):(60-80):(10-20); the layer B of adhesive film is a copolymer of ethylene and alpha-olefin; the DSC (differential scanning calorimetry) melting point of the layer B of adhesive film is higher than 90 DEG C. The anti-PID polyolefin adhesive film has the advantages that the permeation rate of water vapor is lower, the volume resistivity is higher, and the solar cell module has better anti-PID property; by matching with the outer layer A of the adhesive film, the crosslinking property, adhering property and flexibility of low-melting point polyolefin resin composition, and the heat-resistant property, blocking property and electric insulation property of high-melting point polyolefin resin composition are also realized.

The invention discloses a PID (Potential Induced Degradation)-resistant circuit and a monitoring device thereof. The PID-resistant circuit comprises a photovoltaic cell, an inverter and a ground circuit, wherein the anode of the photovoltaic cell is connected with the anode of the direct-current input of the inverter through an anode relay; the cathode of the photovoltaic cell is connected with the cathode of the direct-current input of the inverter through a cathode relay; the ground circuit comprises a fusing protection circuit and a current sensor; the fusing protection circuit consists of a fuse and a protective resistor which are connected in parallel; and one end of the ground circuit is connected with the cathode of the direct-current input of the inverter, and the other end of the ground circuit passing through the fusing protection circuit and the current sensor is grounded. Due to the adoption of the PID-resistant circuit, the phenomenon of PID existing in a photovoltaic cell panel can be eliminated effectively; and meanwhile, ground leakage protection and detection are performed on an entire photovoltaic cell panel array, so that electric shock accidents are avoided and rapid detection of ground short-circuit fault is realized.

The invention discloses a multi-layer composite photovoltaic packaging adhesive film resistant to PID (potential induced degradation) as well as a preparation method and an application. The multi-layer composite photovoltaic packaging adhesive film is formed by sequentially composing multiple bonding layers and barrier layers at intervals, and the multi-layer composite photovoltaic packaging adhesive film comprises 2-5 layers in total and comprises 1-3 barrier layers. The barrier layers are arranged in the multi-layer composite photovoltaic packaging adhesive film, a formula of the barrier layers is optimized and designed, and the PID resistance of the photovoltaic packaging adhesive film can be improved. A charge dissipation agent is added to the barrier layers to absorb and eliminate charges enriched on surfaces of battery pieces, so that charges are quenched, and the PID resistance of the adhesive film is enhanced; a matrix material of the barrier layers has higher volume resistivity and lower water vapor transmittance and achieves the water and oxygen barrier purpose.

The invention discloses a high-water-resistance backboard for a solar battery assembly, which comprises an olefin copolymer layer, a bonding layer, a polyester base layer and a fluorine-containing weather resistant layer. According to the invention, the backboard is enabled to have excellent moisture blocking performance through adding super absorbent resin (SAP) to the olefin copolymer layer, thereby being capable of effectively reducing occurrence of a PID (Potential Induced Degradation) phenomenon in the assembly. The high-water-resistance backboard provided by the invention for the solar battery assembly has the advantages of good weather resistance, high bonding strength, good water blocking performance, low cost and the like, and can be widely applied to packaging of the solar battery assembly.

The invention discloses an anti-PID (Potential Induced Degradation) combiner box system and a realization method thereof. The anti-PID combiner box system comprises a general combiner box; the general combiner box is internally provided with a positive bus and a negative bus connected with a DC cable for output of a combiner box and a first switching device; the positive bus and the negative bus are respectively connected with the input end of an inverter through a positive input port and a negative input port; a single-phase AC input port is connected with the positive bus and the negative bus through the first switching device for loading the AC to the positive bus and the negative bus of the general combiner box through closing the first switching device and transmitting the AC to each combiner box through the DC cable. In the scheme of the invention, the AC and the DC use the existing cable in different time periods, putting into production of an AC cable is reduced, and the power station construction cost is reduced.

The invention discloses an EVA (Ethylene Vinyl Acetate) glue film capable of reducing the PID (Potential-Induced Degradation) phenomena of a photovoltaic module. The EVA glue film is prepared from the following raw materials in percentage by weight: 85%-98% of EVA resin, 0.3%-2% of crosslinking agent, 0.1%-1% of silane coupling agent, 0.03-0.1% of antioxidant, and 0.05%-0.2% of ultraviolet absorbent. The glue film has excellent water vapor barrier property, hydrolysis resistance and insulating property, and can effectively resist the occurrence of the PID phenomena.

The invention provides a photovoltaic inverter system and a potential-induced-degradation (PID) effect compensation method and apparatus thereof. A processing control unit records operation conditions of all photovoltaic assemblies and determines a PID effect compensation condition and thus carries out optimized calculation of a compensation voltage, thereby controlling an integrated PID compensation unit to carry out PID effect compensation on the photovoltaic assemblies and thus realizing PID effect compensation repairing. Therefore, a photovoltaic assembly attenuation problem in the photovoltaic power station can be solved effectively and the generating capacity of the system can be improved. Compared with the prior art, the system, method and apparatus provided by the invention enables the practical operation reliability to be improved and the maintenance cost to be reduced.

The invention discloses a preparation process for a solar cell resisting potential induced degradation. The preparation process includes the steps: (a) cleaning a silicon slice, removing a damaged layer and making herbs into wool; (b) placing the silicon slice into a tubular diffusion furnace for diffusion; (c) removing phosphorus silicon glass and a back junction of the diffused silicon slice; (d) growing a silicon dioxide layer on the surface of an emitting electrode and then depositing a silicon nitride layer or directly depositing a silicon nitride passivation antireflection layer on the surface of the emitting electrode; (e) screen-printing a back electrode and a front electrode; and (f) sintering, testing and sorting. By the preparation process for the solar cell resisting potential induced degradation, the potential induced degradation resistance of the solar cell and a module comprising the same can be improved, so that stable performances of the module in a high-voltage working environment are ensured.

The invention belongs to the manufacture technology of photovoltaic solar cells, and relates to an anti-PID (potential induced degradation) effect solar cells and a fabrication method thereof. The solar cell comprises a crystalline silica substrate, and a SiNx passivation layer and a SiNx euphotic layer which are sequentially deposited on the crystalline silica substrate. A SiNx anti-PID effect layer is also deposited n the euphotic layer. The refraction rate and the thickness of every deposition layer can be changed by changing deposition process parameters in deposition equipment. The passivation layer has a refraction rate being 2.15 to 2.25 and a thickness being 10 to 40nm. The euphotic layer has a refraction rate being 2.0 to 2.15 and a thickness being 40 to 70nm. The anti-PID effect layer has a refraction rate being 2.20 to 2.45 and a thickness being 5 to 20nm. According to the anti-PID effect solar cell and the fabrication method thereof, the anti-PID effect is good, and production can be carried out on the basis of conventional silicon nitride film plating equipment with small equipment investment and low production cost.

The invention discloses a crystalline silicon solar cell and a method for manufacturing the same. The crystalline silicon solar cell comprises a silicon substrate and a silicon nitride film. The silicon nitride film is grown on the surface of the silicon substrate, and a silicon oxide film or an amorphous silicon film is further grown between the silicon substrate and the silicon nitride film. The crystalline silicon solar cell and the method have the advantages that the crystalline silicon solar cell is PID (potential induced degradation)-resistant, and the conversion efficiency performance of the solar cell is not degraded.

A photovoltaic power generation system preventing potential induced degradation includes a photovoltaic array, an inverter square matrix, an alternating current power distribution unit and an isolation transformer. The output end of each battery module in the photovoltaic array is connected with the input end of each inverter in the inverter square matrix; the output end of each inverter is connected with the input end of the alternating current power distribution unit; the output end of the alternating current power distribution unit is connected with the lower voltage side of the isolation transformer, and the high voltage side of isolation transformer is directly connected with a power grid; and each inverter in the inverter square matrix mainly comprises a DC / AC inversion unit, an alternating current auxiliary source, acontroller and an alternating current filtering unit. The photovoltaic power generation system also includes an anti-PID power module arranged at the output end of the alternating current power distribution unit or the low voltage side of the isolation transformer and used for lifting voltage to earth of the alternating current sides and the direct current sides of the inverters; the anti-PID power module can be installed as an independent unit module; and a function of inhibiting a PID effect of the photovoltaic grid-connected power generation system in an inverter working process in the daytime and a function of applying reverse voltage compensation recovery aiming at the PID effect when the inverters are disconnected with a network in the nighttime can be realized.

The invention discloses a solar cell. The solar cell sequentially comprises a back electrode, an aluminum back field, a silicon chip, a diffusion layer, a passivation layer and a positive electrode from bottom to top, and the passivation layer is a silicon oxynitride single layer or a silicon oxynitride / silicon nitride laminated structure, wherein silicon oxynitride is formed by depositing N2O, SiH4 and NH3, and the volume ratio of the N2O to the SiH4 is larger than 1: 1. By adopting the solar cell disclosed by the invention, the problem of lower photoelectric conversion efficiency of the solar cell can be effectively solved, and a PID (potential induced degradation)-free photovoltaic component can be simultaneously realized.

The invention relates to a solar cell piece potential induced degradation (PID) test device and a test method. The test device comprises a direct current voltage device, a resistance tester, a metal electrode array and a metal tray. The test method comprises the following steps: (1). a cell piece is placed on the metal tray, a temperature is controlled to be 0 to 100 DEG C and humidity to be 0 to 100%; (2). the direct current voltage device opens so that an ion flow is applied to a surface of the solar cell piece; (3) ion radiation continues and cell piece parallel resistance changes are tested in a real-time manner; and (4) a curve chart is made for recording the parallel resistance changes. In the invention, the parallel resistance of the solar cell piece is tested directly, and the anti PID effect is determined, i.e. the anti PID effect test at the solar cell terminal is conducted, so that the test cost and test time are saved; the timely optimization of the anti PID cell production process is facilitated; and an effective monitoring is realized at the same time.

The invention provides an electrical regulation system and method for potential induced degradation of photovoltaic power generation. The system comprises a photovoltaic array, an inverter, a proportion integration differentiation (PID) dynamic suppression circuit and an AC power distribution unit, wherein an output end of the photovoltaic array is connected with a DC input end of the inverter, an output end of the inverter is connected with an input end of the AC power distribution unit, an input end of the PID dynamic suppression circuit is connected with the DC input end of the inverter, an output end of the PID dynamic suppression circuit is connected with a bus midpoint N of the inverter, and the PID dynamic suppression circuit is used for detecting a ground voltage of a PV negative electrode of the DC input end of the inverter in real time and adjusting a voltage of the bus midpoint N of the inverter according to the ground voltage of the PV negative electrode so that the ground voltage of the PV negative electrode is larger than 0. By the system, the potential induced degradation can be intelligently suppressed, a battery panel of which the potential induced degradation occurs can be restored on line, and the benefit of the photovoltaic power generation is improved.

The invention provides an anti-Potential Induced Degradation (PID) control method and a control system and is applied to photovoltaic generating systems. Each PV serial string comprises PV components connected in series, with the number of the components as M, and is equipped with an anti-PID device. The anti-PID control method comprises the following steps: detecting the output voltage of each PV component of each PV series string; judging whether the decreasing amplitude of the output voltage of each PV component relative to a first preset voltage value, is greater than a first preset threshold value or not; if the output voltage of the PV component is greater than the first preset threshold value, determining that a PID phenomenon occurs in one of the PV components, and then starting the PID device corresponding to the PV serial string where the PV component is located. The output voltage decreasing amplitude of each PV component in each PV series string can be precisely detected and when the decreasing amplitude exceeds the first preset threshold value, the PID phenomenon occurs and the corresponding PID device is started. Through the adoption of the control method, the PID devices of all serial strings can be accurately controlled to operate and the anti-PID function can be achieved; as one PID device does not serve for all the PV serial strings, each PV serial string can be precisely controlled.

The invention relates to a solar cell structure with an anti-potential induced degradation (PID) effect and a production method of the solar cell structure. The solar cell comprises a base layer, a P+ layer, a silicon base body, a diffusion layer, a thermal oxidation SiOx layer, a dual-layer plasma enhanced chemical vapor deposition (PECVD) SiNx film and an Ag electrode, wherein the thermal oxidation SiOx layer is used for improving the anti-PID capacity of the solar cell; and the production method of the solar cell with the anti-PID effect comprises a pretreatment step, a high-temperature quartz tube cleaning saturation step, a high-temperature oxidation step, a growth step of the dual-layer PECVD SiNx film and a post-treatment step. The physical structure of SiOx is applied to the surface of the solar cell to form a stable film layer, so that the influenceon the solar cell caused by the outside iseffectively isolated; and the anti-PID effect is reached. The anti-PID effect can be realized without inputting of lot of money for equipment purchasing and gas path transformation; an oxidation layer grown by the method is good in compactness; and the anti-PID attenuation test result at an assembly end shows that the assembly power attenuation is kept at 0.5%-1.5% and bettter-than-expected anti-PID effects are achieved.

The invention provides an EVA (Ethylene Vinyl Acetate) composite adhesive film used for photovoltaic packaging and having anti-PID (Potential Induced Degradation) performance. The EVA composite adhesive film comprises 0.05-7% of an acrylamide crosslinker, 0.05-3% of an assistant crosslinker, 0.02-0.5% of an ultraviolet stabilizer, 0.02-0.5% of an assistant antioxidant, 0.02-0.5% of a tackifier, a conventional additive and the balance of EVA. According to the EVA composite adhesive film used for photovoltaic packaging and having anti-PID performance, provided by the invention, the EVA composite adhesive film is endowed with high anti-PID performance through EVA formula adjustment and structure improvement.

The invention provides an anti-PID (potential Induced Degradation) photovoltaic module, which comprises an ultra clear glass layer, a first anti-PID packaging layer, a first EVA film layer, a solar cell layer, a second anti-PID packaging layer, a second EVA film layer, a third anti-PID packaging layer and a backplane layer overlapped sequentially from bottom to top, wherein both the first anti-PID packaging layer and the second anti-PID packaging layer have a box structure; the first EVA film layer is located in the first anti-PID packaging layer and the first anti-PID packaging layer is packaged around the first EVA film layer; the second anti-PID packaging layer is located in the second EVA film layer and the second anti-PID packaging layer is packaged around the second EVA film layer; the third anti-PID packaging layer is overlapped on the second EVA film layer; and the third anti-PID packaging layer is laid at the position of a leading-out wire of the backplane layer. The above anti-PID photovoltaic module has good anti-PID performance.

The invention relates to a method for measuring the high-voltage induced degradation (PID) of at least one solar cell. According to the invention, a conductive plastic material is pressed on the upper side or bottom side of the respective solar cell, in particular on the front side thereof, and a DC voltage greater than 50 V is applied between the plastic material and the respective solar cell. Alternatively, corona discharges may be applied to solar cells or photovoltaic modules. In one embodiment, a characteristic electric parameter of the respective solar cell or of the photovoltaic module is repeatedly measured at time intervals. The method according to the invention can be carried out on individual solar cells, which can be further processed directly after passing the test and without further complex processing, e.g. to a photovoltaic module. In principle, the method is also suitable for measurements on complete photovoltaic modules.

A solar cell of anti potential induced degradation and a manufacturing method thereof are disclosed by embodiments of the invention. The method includes: performing plasma cleaning on a silicon wafer by using an oxidizing gas, so as to form a first silicon oxide film on the surface of the silicon wafer; and forming an anti-reflection film on the surface of the first silicon oxide film, where the anti-reflection film includes at least a silicon oxide film.

The invention provides an accelerated PID (Potential Induced Degradation) testing method comprising the following steps of: (1) cleaning a surface of an assembly; (2) scattering a less amount of liquid on the surface of the assembly; (3) covering a conductive thin film on the surface of the assembly, so that good contact of the conductive thin film and the assembly can be ensured; (4) putting the assembly in an environment test box, enabling the anode and cathode of the assembly to be shorted-circuited, leading out wires from the conductive thin film and the wiring end of the assembly from the environment test box, and heating the assembly to a temperature which is more than 60 DEG C through the environment test box; and (5) grounding the conductive thin film, supplying a negative voltage which is more than minus 600 V on the wiring end of the assembly, and then carrying out a PID test. By utilizing the accelerated PID testing method provided by the invention, the PID testing time is greatly reduced from some days to some hours by improving testing conditions; the test period is reduced; and the test efficiency is improved.

The present invention discloses a high-conversion-efficiency potential-induced degradation (PID)-resisting crystalline silicon solar cell. The solar cell comprises a silicon wafer, and is characterized in that a high refractive index silicon nitride passivation layer, a grapheme conducting layer and a low refractive index silicon nitride passivation layer, which are arranged in turn on a front face of the silicon wafer. Meanwhile, a manufacturing method of the above solar cell is also provided, and comprises the steps of selecting the silicon wafer and carrying out texturization, diffusion and post cleaning; depositing the high refractive index silicon nitride passivation layer on the front face of the silicon wafer, the refractive index being 2.2-2.3 and the film thickness being 1-10 nm; spin coating a grapheme dispersion liquid on the silicon nitride, and then carrying out follow-up drying to form the grapheme conducting layer, the thickness being 1-10 nm; depositing the low refractive index silicon nitride passivation layer on the grapheme conducting layer, the refractive index being 2.0-2.1 and the film thickness being 60-80 nm; and completing back electrode, back electric field and positive electrode printing, drying and sintering, thus to form the cell. The crystalline silicon solar cell provided by the present invention has excellent PID-resisting performance and high battery conversion efficiency.

The invention discloses a photovoltaic module resisting potential induced degradation. According to the photovoltaic module, a silicon nitride thin film layer or a silicon dioxide thin film layer is arranged between a second EVA layer and glass of the photovoltaic module, thus free metal ions such as sodium ions and calcium ions in the glass are effectively blocked from migrating onto a solar cellslice layer of the photovoltaic module, so that the influence of a potential induced degradation phenomenon on the photovoltaic module is weakened; and the silicon nitride thin film layer or the silicon dioxide thin film layer can further serve as an antireflection film, reduces reflection of sun light by means of the photovoltaic module, increases the absorption rate of incident light, and can play a role of improving the photoelectric conversion efficiency of the photovoltaic module.

The invention discloses a photovoltaic power supply system. The photovoltaic power supply system comprises M photovoltaic cell components, N photovoltaic inverters, a voltage source and a power grid. Each photovoltaic inverter comprises a first input terminal and a first output terminal. At least one photovoltaic cell component is connected to any first input terminal. The first output terminals are in parallel and electric connection with the power grid. The first input terminals are grounded through the voltage source. The N is an integer larger than or equal to 1, and the M is an integer larger than or equal to 1. According to the photovoltaic power supply system, the voltage source is connected between the first input terminal of any photovoltaic inverter and the ground, so that the photovoltaic cell components of the whole photovoltaic power supply system are all under positive bias, generation of photovoltaic PID (potential induced degradation) effects is inhibited, degradation of the photovoltaic cell components is reduced, and power generation capacity of the photovoltaic power supply system is improved.