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Crystalline silicon solar cell and method for manufacturing same

A technology of solar cells and crystalline silicon, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of reduced conversion efficiency of cells, increased costs, and increased refractive index of silicon nitride films, etc.

Inactive Publication Date: 2013-09-18
ALTUSVIA ENERGY TAICANG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Usually, the change of materials or connection methods at the component and system ends will cause an increase in cost, while the improvement of the anti-reflection coating at the battery end is mainly to increase the refractive index of the silicon nitride film. Due to the increase in the light absorption of the high-refractive index silicon nitride film, It will reduce the conversion efficiency of the battery

Method used

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  • Crystalline silicon solar cell and method for manufacturing same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] Using a P-type monocrystalline silicon wafer as the base material (that is, the aforementioned substrate), the specific steps of the manufacturing method are as follows:

[0038] (1) P-type silicon wafers are damaged and textured, and cleaned;

[0039] (2) Tubular phosphorus diffusion, diffusion resistance 60ohm / sq;

[0040] (3) Wet edge cutting, and remove the PN junction on the back;

[0041] (4) Using HNO3 with a mass concentration of 69%, at 70°C for 10 minutes, grow a layer of silicon oxide on the upper surface of the silicon wafer with a thickness of 1-100nm (preferably 3-8nm);

[0042] (5) A silicon nitride film (as an anti-reflection film) is grown on the upper surface of silicon oxide by PECVD, with a thickness of 40-150nm (preferably 75nm);

[0043] (6) Print electrodes, sinter and test sorting;

[0044] (7) String welding battery slices;

[0045] (8) Laying, laminating, junction boxes, framing, and making finished components.

[0046] The solar cells are...

Embodiment 2

[0048] Using a P-type monocrystalline silicon wafer as the base material (that is, the aforementioned substrate), the specific steps of the manufacturing method are as follows:

[0049] (1) P-type silicon wafers are damaged and textured, and cleaned;

[0050] (2) Tubular phosphorus diffusion, diffusion resistance 60ohm / sq;

[0051] (3) Wet edge cutting, and remove the PN junction on the back;

[0052] (4) A layer of silicon oxide film is grown on the upper surface of the silicon wafer by PECVD, with a thickness of 10nm;

[0053] (5) A silicon nitride film (as an anti-reflection film) is grown on the upper surface of the silicon oxide film by PECVD, with a thickness of 70nm;

[0054] (6) Print electrodes, sinter and test sorting;

[0055] (7) String welding battery slices;

[0056] (8) Laying, laminating, junction boxes, framing, and making finished components.

[0057] The solar cells are made into modules, and the module materials are made of conventional commercial modu...

Embodiment 3

[0059] Using a P-type monocrystalline silicon wafer as the base material (that is, the aforementioned substrate), the specific steps of the manufacturing method are as follows:

[0060] (1) P-type silicon wafers are damaged and textured, and cleaned;

[0061] (2) Tubular phosphorus diffusion, diffusion resistance 60ohm / sq;

[0062] (3) Wet edge cutting, and remove the PN junction on the back;

[0063] (4) Using PECVD to grow a layer of amorphous silicon film on the upper surface of the silicon wafer with a thickness of 1-50nm (preferably 3-5nm);

[0064] (5) A silicon nitride film (as an anti-reflection film) is grown on the upper surface of silicon oxide by PECVD method, with a thickness of 75nm;

[0065] (6) Print electrodes, sinter and test sorting;

[0066] (7) String welding battery slices;

[0067] (8) Laying, laminating, junction boxes, framing, and making finished components.

[0068]The solar cells are made into modules, and the module materials are made of conve...

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Abstract

The invention discloses a crystalline silicon solar cell and a method for manufacturing the same. The crystalline silicon solar cell comprises a silicon substrate and a silicon nitride film. The silicon nitride film is grown on the surface of the silicon substrate, and a silicon oxide film or an amorphous silicon film is further grown between the silicon substrate and the silicon nitride film. The crystalline silicon solar cell and the method have the advantages that the crystalline silicon solar cell is PID (potential induced degradation)-resistant, and the conversion efficiency performance of the solar cell is not degraded.

Description

technical field [0001] The invention relates to a crystalline silicon solar cell and a manufacturing method thereof, in particular to the relationship between process improvement and potential-induced attenuation of the crystalline silicon solar cell. Background technique [0002] In a photovoltaic system, for safety reasons, the aluminum frame of the module is usually grounded, so that the battery terminal will be in a state of negative pressure. Driven by this negative pressure, the current flows from the ground terminal to the battery through the aluminum frame, glass and EVA. During this process, a large amount of positive charges will accumulate on the surface of the battery, causing the battery to fail. This is why the components are under high potential for a long time. Attenuation (potential induced degradation), referred to as PID. With the development of photovoltaic technology, the number of panels connected in series in large-scale photovoltaic systems is increa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/042H01L31/0216H01L31/18H01L31/20
CPCY02E10/50Y02P70/50
Inventor 夏正月任常瑞张满良高艳涛陶龙忠张斌邢国强
Owner ALTUSVIA ENERGY TAICANG
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