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Anti-PID effect solar cell and fabrication method thereof

A technology for solar cells and manufacturing methods, applied in the direction of final product manufacturing, sustainable manufacturing/processing, circuits, etc., can solve problems such as increasing the production cost of solar cells, and achieve the goal of eliminating PID effects, reducing production costs, and improving minority carrier life. Effect

Active Publication Date: 2013-10-02
ZHENJINAG KLOCKNER MOELLER ELECTRICAL SYST CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For example, the SiO2 / SiNx film layer is used to eliminate PID, but it needs to increase the gas path or update the equipment on the basis of the traditional cell production equipment, thus increasing the production cost of the cell

Method used

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  • Anti-PID effect solar cell and fabrication method thereof

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Embodiment

[0018] Such as figure 1 As shown, the solar cell of the present invention includes a crystalline silicon substrate 1 , and a passivation layer 2 , a light-transmitting layer 3 and an anti-PID effect layer 4 sequentially deposited on the crystalline silicon substrate. The preparation process is carried out on the tubular direct method silicon nitride coating equipment, which specifically includes the following steps:

[0019] Step 1, preheating, the crystalline silicon substrate enters the reaction chamber and is heated at a constant temperature to reach the set reaction temperature, and the temperature is set at 450°C;

[0020] Step 2, constant pressure, filling the reaction chamber with reaction gas NH 3 and SiH 4 , SiH 4 Flow 780 sccm / min, NH 3 Flow rate 3500 sccm / min, pressure range 1.7 Torr;

[0021] Step 3, passivation layer deposition, the radio frequency power is turned on, the radio frequency power is 7000 W, at the reaction temperature, the active radicals in the...

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Abstract

The invention belongs to the manufacture technology of photovoltaic solar cells, and relates to an anti-PID (potential induced degradation) effect solar cells and a fabrication method thereof. The solar cell comprises a crystalline silica substrate, and a SiNx passivation layer and a SiNx euphotic layer which are sequentially deposited on the crystalline silica substrate. A SiNx anti-PID effect layer is also deposited n the euphotic layer. The refraction rate and the thickness of every deposition layer can be changed by changing deposition process parameters in deposition equipment. The passivation layer has a refraction rate being 2.15 to 2.25 and a thickness being 10 to 40nm. The euphotic layer has a refraction rate being 2.0 to 2.15 and a thickness being 40 to 70nm. The anti-PID effect layer has a refraction rate being 2.20 to 2.45 and a thickness being 5 to 20nm. According to the anti-PID effect solar cell and the fabrication method thereof, the anti-PID effect is good, and production can be carried out on the basis of conventional silicon nitride film plating equipment with small equipment investment and low production cost.

Description

technical field [0001] The invention belongs to the manufacturing technology of photovoltaic solar cells, and relates to a PID-resistant solar cell and a manufacturing method thereof. Background technique [0002] Crystalline silicon solar cells do not emit or emit any harmful substances during use; there are no moving parts, no noise, light weight, small size, modular features, can be dispersed and set up on site, the construction period is short, and the working life is long 20-25 Years, easy maintenance, reliable operation and other advantages, it is a very ideal renewable clean energy. In practical applications, because the output voltage and power of a single crystalline silicon solar module are too low to meet the needs of life or production, multiple modules need to be connected in series. Under the condition that the outer frame is grounded, multiple components connected in series will result in high reverse bias voltage between the outer frame and the surface of th...

Claims

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Application Information

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IPC IPC(8): H01L31/0216H01L31/042H01L31/18
CPCY02E10/50Y02P70/50
Inventor 张良李良姚剑高贝贝余东华毛海燕
Owner ZHENJINAG KLOCKNER MOELLER ELECTRICAL SYST CO LTD
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