Preparation process for solar cell resisting potential induced degradation
A potential-induced attenuation and solar cell technology, applied in the field of solar cells, can solve problems such as low component performance, short-circuit current and fill factor reduction, and deterioration of battery surface passivation, so as to improve the ability to resist potential-induced attenuation and ensure performance Effect
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example 1
[0018] Clean the silicon wafer, remove the damaged layer, and make texture; put the silicon wafer into a tubular diffusion furnace for diffusion, the resistance after diffusion is 50Ω / port, and the junction depth is 0.35μm; remove the phosphosilicate glass from the diffused silicon wafer and Remove the back junction; deposit silicon nitride passivation anti-reflection layer on the surface of the emitter; the anti-reflection layer is a single-layer film with a thickness of 70nm and a refractive index of 2.2; screen-print the front electrode and the back electrode; sinter and test sorting.
example 2
[0020] Clean the silicon wafer, remove the damaged layer, and make texture; put the silicon wafer into a tubular diffusion furnace for diffusion, the resistance after diffusion is 55Ω / port, and the junction depth is 0.30μm; remove the phosphosilicate glass from the diffused silicon wafer and Remove the back junction; deposit a silicon nitride passivation anti-reflection layer on the surface of the emitter; the anti-reflection layer is a double-layer film, the thickness of the first layer is 20nm, the refractive index is 2.5, the thickness of the second layer is 50nm, the refractive index 2.1; screen printed front and back electrodes; sintered and tested for sorting.
example 3
[0022] Clean the silicon wafer, remove the damaged layer, and make texture; put the silicon wafer into a tubular diffusion furnace for diffusion, the resistance after diffusion is 50Ω / port, and the junction depth is 0.35μm; remove the phosphosilicate glass from the diffused silicon wafer and Remove the back junction; deposit silicon nitride passivation anti-reflection layer on the surface of the emitter; the anti-reflection layer is a three-layer film, the thickness of the first layer is 10nm, the refractive index is 2.5, the thickness of the second layer is 20nm, the refractive index is 2.2; the thickness of the third film is 40n, and the refractive index is 2.1; the front electrode and the back electrode are screen-printed; sintered and tested for sorting.
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