The invention discloses a 14T
radiation-resistant static
storage cell, which is capable of improving SEU (
Single Event Upset) resistance, improving the speed of the 14T
radiation-resistant static
storage cell to a large extent under the situation that smaller
cell area is sacrificed and reducing
power consumption. During a reading-writing stage, a WL
signal is in high level. When a circuit is in awriting stage, if BL is in high level and BLB is in low level, '1' can be written in a storage node Q through differential input transistors N4 and N5; if the BL is in low level and the BLB is in high level, '0' can be written in the storage node Q through the differential input transistors N4 and N5. When the circuit is in a reading stage, if the BL and the BLB are both in high level and data stored in the
cell unit is '1'
voltage can be discharged to the ground through transistors N4 and N0 by the BLB,
voltage difference can be generated by a
bit line, and then the data can be read out through a sensitive
amplifier; if the data stored in the
cell circuit is '0', the current can be discharged to the ground through transistors N5 and N1 by the BL, the
voltage difference can be generated by the
bit line, and then the data can be read out through the sensitive
amplifier.