68results about How to "Uniform distribution of current density" patented technology

The invention discloses a high-power thyristor which comprises a silicon wafer, the silicon wafer is provided with unit cell gate poles, each unit cell gate pole comprises a central gate pole and an amplification gate pole, each central gate pole is located at the dead center of each amplification gate pole, the silicon wafer is provided with at least seven unit cell gate poles, and any three adjacent unit cell gate poles are distributed on the silicon wafer in a regular triangle shape. A plurality of small-size unit cell gate poles are installed on the silicon wafer of the high-power thyristor, multiple-unit cell structure gate poles are formed on the surface of the silicon wafer of the high-power thyristor, a plurality of parasitic resistors and a plurality of working areas which are small in capacitance are built on the surface of the silicon wafer, so that the thyristor which is large in size has the same working properties with a thyristor which is small in size, and the high-power thyristor has the advantages of being high in starting speed, even in current density distribution, high in on-state average current density, low in on-state voltage-drop, and low in on-state power consumption. Therefore, by means of the technical scheme, switching operation which is good in performance can be achieved on the high-power thyristor which is larger in size.