LED (Light-Emitting Diode) chip and production method thereof

Abstract

The invention provides an LED (Light-Emitting Diode) chip and a production method thereof. The LED chip comprises a substrate, an N-type semiconductor layer located on the substrate, a light-emitting layer, a P type semiconductor layer, and N electrodes and P electrodes which are electrically connected with the N-type semiconductor layer and the P type semiconductor layer. The LED chip also comprises an N type table surface and a plurality of N type electrode slots which are etched to the N-type semiconductor layer. Insulation dielectric layers crossing the N type electrode slots are arranged on the side walls of the N type electrode slots and above the P type semiconductor layer. First transparent conductive layers connected with the bottoms of the N type electrode slots and electrically connected with the N-type semiconductor layer are formed in the insulation dielectric layers. A first N electrode is arranged on the N type table surface. Second N electrodes are arranged in the first transparent conductive layers of the N type electrode slots. The first N electrode and the second N electrodes are electrically connected through the first transparent conductive layers. According to the LED chip provided by the invention, the current density distribution is even, the light-emitting performance of the LED chip is improved; the area of an active layer is increased effectively; and the light-emitting efficiency of the chip is improved.

Description

technical field [0001] The invention relates to the field of semiconductor chips, in particular to an LED chip and a manufacturing method thereof. Background technique [0002] A light-emitting diode (Light-Emitting Diode, LED) is a semiconductor electronic component that can emit light. This electronic component appeared as early as 1962. In the early days, it could only emit red light with low luminosity. Later, other monochromatic light versions were developed. Today, the light that can be emitted has covered visible light, infrared rays and ultraviolet rays, and the luminosity has also increased to a considerable extent. of luminosity. Because of its energy saving, environmental protection, safety, long life, low power consumption, low heat, high brightness, waterproof, miniature, shockproof, easy dimming, concentrated beam, easy maintenance, etc., it can be widely used in various indications, displays, decorations , backlight, general lighting and other fields. [00...

AI Technical Summary

Problems solved by technology

The two electrodes of the LED chip with a lateral structure are on the same side of the LED chip, the P electrode is in the p-type GaN region of the LED epitaxial layer, and the N electrode is distributed in the n-type GaN region exposed by etching. The distribution of P and N electrodes is not equidistant, resulting in uneven current distribution in the n-type GaN and p-type GaN layers, thus affecting the luminous efficiency

[0004] In addition, see figure 1 As shown, in the traditional horizontal structure LED chip, the N electrodes 81' and 82' are arranged in the n-type GaN area exposed by etching, because the epitaxial layer needs to etch a larger area (the entire n-type area), and because the P electrode 91' , 92' and N electrodes 81', 82' are all distributed on the light-emitting surface of the LED chip, so the effective area of ​​light-emitting is reduced, so the light-emitting efficiency is low

Images