The invention discloses a SiC dual-groove metal-oxide-semiconductor field-effect transistor (MOSFET) device integrated with a Schottky diode. Two grooves are formed in an original cell structure of an active region in the SiC dual-groove MOSFET device and are respectively a gate groove and a source groove, the gate groove is formed in the center of the original cell structure, the source groove is formed in the periphery of the gate groove, doping with a conductive type opposite to that of a drift region is performed in the peripheries of the bottoms of the gate groove and the source groove, Schottky contact is arranged at a central region of the bottom of the source groove, and the Schottky diode electrically communicating with a source is formed, ohmic contact is formed between the periphery of the bottom of the source groove and a doping region with the conductive type opposite to that of the drift region, and the depths of the two grooves are larger than that of a p base region. With the adoption of a source and gate dual-groove structure, the doping with the conductive type opposite to that of the drift region is performed on the peripheries of the bottoms of the gate groove and the bottom of the source groove, thus, the shielding of an MOS gate is achieved, and the gate reliability is improved; and meanwhile, an electric field of the base region can be shielded, and the base region is prevented from being penetrated; and moreover, an MPS Schottky diode having high surge capability is integrated.