Patents
Literature
Hiro is an intelligent assistant for R&D personnel, combined with Patent DNA, to facilitate innovative research.
Hiro

37results about How to "Thermal stress" patented technology

Method of operating an inverter and inverter control arrangement

A method of operating an inverter for converting a DC power into AC power by use of a pulse width modulation switching scheme is provided is disclosed. The inverter is controlled by use of the pulse width modulation switching scheme to provide an alternating current based on a current demand signal defining an alternating current provided by the inverter. An upper current threshold and a lower current threshold are provided. An instantaneous value of the alternating current is measured. When the instantaneous value of the alternating current overshoots the upper current threshold or undershoots the lower current threshold, the pulse width modulation switching scheme is replaced by an amended switching scheme which controls the instantaneous value of the alternating current to be between the upper current threshold and the lower current threshold. The upper current threshold and the lower current threshold oscillate with at least one alternating phase.
Owner:SIEMENS AG

Fine Carbon Fiber-Metal Composite Material and Method for Production Thereof

To provide a fine carbon fiber / metal composite material having high mechanical strength, a high thermal conductivity and a low coefficient of thermal expansion and suitable as a substrate for an electronic device. A fine carbon fiber / metal composite material, which is prepared by pressure impregnating a molded product containing fine carbon fibers having a fiber diameter of from 0.5 to 500 nm and a fiber length of at most 1,000 μm, having a multilayer structure wherein cylindrical carbon layers overlap one another, and having a hollow-structured central axis, with aluminum, magnesium, copper or an alloy of such a metal, by molten metal forging.
Owner:MITSUBISHI CORPORATION +1

Semiconductor apparatus and process of production thereof

A method of producing a semiconductor apparatus, the method including forming metal ball bumps in direct contact with a circuit pattern of a semiconductor device, forming a resin film to seal spaces between the metal ball bumps, cleaning the surfaces of the metal ball bumps projecting out from the resin film using plasma cleaning by removing components inviting a rise in a connection resistance and a decline in a joint strength, forming eutectic solder layers different in composition from the metal ball bumps on the surfaces of the metal ball bumps, cutting the semiconductor substrate into unit semiconductor chips, and mounting at least one of the chips on a mounting board from a bump forming surface side of the chip so as to connect the eutectic solder layers to the mounting board with the resin film directly contacting the chip and not directly contacting the mounting board.
Owner:SONY CORP

Ceramic structure and process for producing the same

There is disclosed a ceramic structure which comprises a material having a controlled pore distribution and including cordierite as the main crystal phase. In the pore distribution, the volume of pores having pore diameters smaller than 20 μm accounts for 15% or less of the total pore volume, and the volume of pores having pore diameters of 20 to 100 μm accounts for 70% or more of the total pore volume. This ceramic structure is suitable for realizing a ceramic catalyst body which has excellent purification efficiency, is reduced in pressure loss, and is mountable even in a limited space.
Owner:NGK INSULATORS LTD

Conical graphite electrode with raised edge

The present invention relates to a carbon electrode having a conical or pyramidal tip, wherein the tip is surrounded on its side by a raised edge.
Owner:WACKER CHEM GMBH

Thermal insulation structure with adjustable cold core for growth of sapphire single crystals by virtue of kyropoulos method

The invention provides a thermal insulation structure with an adjustable cold core for growth of sapphire single crystals by virtue of a kyropoulos method. A metal sheet made from tungsten or molybdenum is taken as a heat shield, wherein the heat shield comprises a horizontal type heat shield and a vertical type heat shield, and a gap between the shields is supported by adopting molybdenum bars at vertical intervals; a space between a stainless steel drum and the vertical type heat shield is divided into an inner layer filling region and an outer layer filling region by virtue of molybdenum plates and cylinders at intervals, the inner layer filling region is filled with zirconium oxide (ZrO2) hollow bubble shells, the outer layer filling region is divided into multiple vertical cubicle structures by adopting vertical molybdenum plates at intervals, and multiple cubicles form a symmetry structure taking the axis of a cylinder as the center; according to a cold core offset direction of an upper furnace, ZrO2 bubble shells are filled in the cubicles at one side of the offset direction or molybdenum slats with the same width of the cubicles are inserted in the cubicles, and a thermal insulation effect of the side of the offset direction is enhanced, so that the cold core moves toward the reverse direction of the offset direction, the effect that the cold core is arranged at a central position of a crucible is guaranteed, radial uniform distribution of a thermal filed in a furnace is improved, and the effects of seeding conveniently, reducing thermal stress inside crystals and preventing the crystals from adhering onto a boiler can be achieved.
Owner:江苏国晶光电科技有限公司

Circuit board

A semiconductor device in which electrodes of a plurality of semiconductor elements are bonded onto at least one of a plurality of electrode patterns on an insulator substrate, the other surface of the insulator substrate being bonded to a heat dissipating base. The upper surface of the heat dissipating base is covered with a member for cutting off the semiconductor elements from the outer environment. Terminals electrically connect the electrodes on said insulator substrate and the electrode placed outside the cutoff member. The material of the heat dissipating base has a linear expanding coefficient larger than that of the semiconductor element and smaller than three times that of the semiconductor element, and a thermal conductivity larger than 100 W / mK. The semiconductor elements are arranged on at least one electrode surface and in at least two regions divided by the other electrode surface on the insulator substrate.
Owner:FITEL USA CORP

Electrode for a solid oxide fuel cell and method for its manufacture

An electrode is provided containing spherical voids which improve its gas diffusion properties and improving thermal stability of materials with different properties including the coefficient of thermal expansion. The electrode is especially useful as a component, i.e., cathode and / or anode, of solid oxide fuel cells.
Owner:WATT FUEL CELL CORP

Semiconductor apparatus and process of production thereof

A process of production of a semiconductor apparatus which can suppress a rise in the electrical resistance and a decline in the joint strength at the bump connection interfaces and improve the connection reliability when using the method of reinforcing the bases of the bumps by a resin film. Bumps are formed on a semiconductor wafer formed with a pattern circuit of a semiconductor chip so as to connect to the circuit pattern, a resin film is formed on the bump forming surface of the semiconductor wafer to a thickness giving a surface lower than the height of the bumps while sealing the spaces between the bumps, plasma cleaning etc., is used to remove the sealing resin components deposited on the surface portions of the bumps or natural oxides or other insulating impurities to clean and activate the surfaces of the bumps, and the chip is mounted on a mounting board.
Owner:SONY CORP

Compressor casing for an exhaust gas turbocharger

InactiveUS8043047B2Produced especially small and compact and inexpensiveGood allowancePump componentsCombustion enginesImpellerTurbine wheel
A compressor casing for an exhaust gas turbocharger is disclosed. The exhaust gas turbocharger has a rotatable turboshaft, a compressor wheel mounted on the turboshaft, and a turbine wheel mounted on the turboshaft. The compressor casing includes a sensor for measuring a rotational speed of the turboshaft. The sensor is embedded in the compressor casing and forms an integral component of the compressor casing.
Owner:CONTINENTAL AUTOMOTIVE GMBH

Reflection ring lifting device for improving thermal field of zone-melting single-crystal furnace

ActiveCN102534754ASmooth and reliable movementRealize forward and backward adjustmentBy zone-melting liquidsThermal insulationZone melting
The invention relates to manufacturing equipment for non-mental crystals and aims at providing a reflection ring lifting device for improving the thermal field of a zone-melting single-crystal furnace. The reflection ring lifting device comprises a reflection ring and a window flange of a main furnace chamber; an outer side ring of the reflection ring is provided with a hollow cooling pipe; the two ends of the cooling pipe are connected to metal sealing joints on the window flange; the metal sealing joints are extended out of the outer wall of the window flange to be used as a cooling water inlet and outlet; the cooling pipe is fixed at one end of a support which is positioned on a vertical optical shaft; an engaged vertical lifting lead screw is also arranged on the support; and a transmission shaft is connected with the lifting lead screw through a bevel gear pair. The reflection ring lifting device has the advantages of realizing the lifting movement of the reflection ring in a hearth of the zone-melting furnace, being smooth and reliable in movement, being capable of realizing front and back adjustment, being convenient for aligning the reflection ring and a heating coil and being capable of forming a favorable thermal field in a melting zone, thereby increasing the quality of single crystals. By adjusting the position of the reflection ring, the reflection ring has thermal insulation effect on the single crystals, reduces the thermal stress inside the crystals and prevents detects such as flaws and the like from occurring in the single crystals due to undercooling.
Owner:ZHEJIANG JINGSHENG MECHANICAL & ELECTRICAL

Conical graphite electrode with raised edge

A carbon electrode has a conical or pyramidal tip, wherein the tip is surrounded on its side by a raised edge.
Owner:WACKER CHEM GMBH

Image sensor

An image sensor includes a package having a window; a sensor chip facing the window, the sensor chip having a pixel region, the sensor chip having an electrode; a read-out circuit disposed farther from the window than the sensor chip, the read-out circuit having a read-out electrode connected to the electrode of the sensor chip; and a shielding plate disposed outside the pixel region of the sensor chip. The shielding plate is configured to block transmission of light.
Owner:SUMITOMO ELECTRIC IND LTD

Semiconductor device and method of making the same

According to a method of making a semiconductor device, a semiconductor chip is bonded to a substrate via bumps by flip-chip bonding. Then, a sealing adhesive composition is loaded between the semiconductor chip and the substrate to provide an adhesive sealing. The sealing adhesive composition, which is capable of hardening in two stages, contains at least a first main resin ingredient, a second main resin ingredient and a hardening agent. Then, the adhesive sealing is heated for primary hardening. Then, the substrate is placed on a mother board with a solder material interposed between the substrate and the mother board. Finally, the adhesive sealing is heated for secondary hardening while the solder material is reflowed for bonding the substrate to the mother board.
Owner:FUJITSU LTD

Package unit, printed board having the same, and electronic apparatus having the printed board

A package unit to be mounted on an external printed board includes a package board mounted with an exoergic circuit element, a heat spreader that transmits heat from the exoergic circuit element to a heat sink that radiates the heat, a joining member that seals between the exoergic circuit element and the heat spreader, and forms a sealing space in cooperation with the exoergic circuit element and the heat spreader, and a liquid metal sealed in the sealing space.
Owner:FUJITSU LTD

Heating device with infrared radiating elements

A heating device for heating a powder during the production of a 3D shaped part. The heating device has an infrared (IR) lamp and a housing in which a construction chamber is provided. The construction chamber is bounded at the bottom by a construction platform for receiving the shaped part and is supported on a support plate. The IR lamp heats the powder during production of the 3D shaped part in the construction chamber. For ensuring an optimized heat transfer to the sintering or melting powder with a particularly homogeneous temperature distribution, a partition wall composed of an IR radiation transparent material is arranged between the construction chamber and the IR lamp.
Owner:HERAEUS NOBLELIGHT GMBH

Method for preparing micro-radio-frequency T-shaped power divider on metal base

The invention relates to a method for preparing a micro-radio-frequency T-shaped power divider on a metal base, and belongs to the technical field of micro-manufacturing. A gel column used for supporting an inner conductor is manufactured by utilizing SU-8 negative photoresist on a copper base by adopting a UV-LIGA technology, then a graphic glue film is manufactured by utilizing AZ50XT positive photoresist, and structures of a metal frame, the inner conductor, a top cover and the like are obtained through a copper electroforming technology. Finally, the AZ50XT glue film is dissolved by utilizing acetone, and the T-shaped power divider is obtained. According to the method for preparing the micro-radio-frequency T-shaped power divider on the metal base, a traditional silicon base is abandoned and the metal base is used, the problem that the silicon base is prone to being broken into pieces in the manufacturing process is solved, further, a metal conducting layer is not needed to be sputtered on the base, and the process steps are reduced. Meanwhile, when the AZ50XT glue film is removed, heating is not needed, and heat stress cannot be generated inside the structure, so that the probability of failure of manufacturing is reduced.
Owner:DALIAN UNIV OF TECH

Package unit, printed board having the same, and electronic apparatus having the printed board

A package unit to be mounted on an external printed board includes a package board mounted with an exoergic circuit element, a heat spreader that transmits heat from the exoergic circuit element to a heat sink that radiates the heat, a joining member that seals between the exoergic circuit element and the heat spreader, and forms a sealing space in cooperation with the exoergic circuit element and the heat spreader, and a liquid metal sealed in the sealing space.
Owner:FUJITSU LTD

Fine carbon fiber-metal composite material and method for production thereof

To provide a fine carbon fiber / metal composite material having high mechanical strength, a high thermal conductivity and a low coefficient of thermal expansion and suitable as a substrate for an electronic device.A fine carbon fiber / metal composite material, which is prepared by pressure impregnating a molded product containing fine carbon fibers having a fiber diameter of from 0.5 to 500 nm and a fiber length of at most 1,000 μm, having a multilayer structure wherein cylindrical carbon layers overlap one another, and having a hollow-structured central axis, with aluminum, magnesium, copper or an alloy of such a metal, by molten metal forging.
Owner:MITSUBISHI CORPORATION +1

Multi-layer wiring, method of manufacturing the same and thin film transistor having the same

A multi-layer wiring for use with thin film transistors (TFTs), methods of manufacturing the multi-layer wiring, and TFTs employing the multi-layer wiring are provided. In one embodiment, the multi-layer wiring includes a main wiring and a sub-wiring on the main wiring. The main wiring includes a first metal and the sub-wiring includes an alloy wherein a majority of the alloy is the first metal. The multi-layer wiring can exhibit decreased electrical resistance and a reduced tendency to develop malfunctions such as hillocks or spiking. The multi-layer wiring can also exhibit improved contact characteristics with other conductive elements of TFT display devices.
Owner:LEE JE HUN +3

Laminated and sintered ceramic circuit board, and semiconductor package including the circuit board

A circuit board that can decrease thermal stress acting between a semiconductor element and a board in association with temperature alteration and has high mechanical strength (rigidity) as a whole board (including a multilayer wiring layer) is provided. Ceramic base material having a coefficient of thermal expansion close to that of a semiconductor element and inner layer wiring are integrally sintered, and the circuit board is configured so that fine-lined conductor structure corresponding to a multilayer wiring layer in the inner layer wiring has predetermined width, intralayer interval and interlayer interval. Thereby, thermal stress acting between a semiconductor element and the board when the board is exposed to temperature alteration in a condition where it is joined with the semiconductor element is suppressed, rigidity of the board is maintained, and its reliability against temperature cycle is increased.
Owner:NGK INSULATORS LTD

Method of operating an inverter and inverter control arrangement

A method of operating an inverter for converting a DC power into AC power by use of a pulse width modulation switching scheme is provided is disclosed. The inverter is controlled by use of the pulse width modulation switching scheme to provide an alternating current based on a current demand signal defining an alternating current provided by the inverter. An upper current threshold and a lower current threshold are provided. An instantaneous value of the alternating current is measured. When the instantaneous value of the alternating current overshoots the upper current threshold or undershoots the lower current threshold, the pulse width modulation switching scheme is replaced by an amended switching scheme which controls the instantaneous value of the alternating current to be between the upper current threshold and the lower current threshold. The upper current threshold and the lower current threshold oscillate with at least one alternating phase.
Owner:INNOMOTICS GMBH

Integrated circuit packaging module, preparation method thereof and photoelectric processing module

The invention provides a preparation method of an integrated circuit packaging module. The preparation method comprises the following steps: preparing a PIC chip of which a light-induced active surface is coated with a first photoresist layer; cleaning the first photoresist layer, and coating a coating area of the first photoresist layer for multiple times to obtain a second photoresist layer with the thickness being the target thickness; interconnection between the PIC chip and at least one related chip in the multiple related chips and interconnection between the multiple related chips are completed, and a chip module is obtained; performing plastic packaging on the chip module to obtain a first plastic packaging layer, and grinding and thinning the first plastic packaging layer until the second photoresist layer is exposed; and cleaning the second photoresist layer to obtain a preset cavity for laying the optical fiber array waveguide device. The invention also provides an integrated circuit packaging module and a photoelectric processing module. A low-temperature packaging process is adopted, so that adverse effects on circuits such as transistors in the chip are avoided; the preset cavity with relatively high cleanliness can be obtained; and a photoinduced active surface with a complete structure can be obtained.
Owner:JCET SEMICON (SHAOXING) CO LTD

Semiconductor device

A trench structure which is capable of promoting extension of a depletion layer and hardly causes thermal stress is provided. A semiconductor device includes a semiconductor substrate. A plurality of loop trenches is formed on the surface of the semiconductor substrate. Each loop trench is configured to extend so as to surround a region smaller than the region where a plurality of gate trenches is formed. Each loop trench is separated from other loop trenches. A second insulating layer is located in each loop trench. P-type fourth regions are formed in the semiconductor substrate. Each fourth region is in contact with a bottom surface of corresponding one of the loop trenches and is configured to extend along the corresponding one of the loop trenches.
Owner:DENSO CORP

Leadframe

A leadframe including a chip supporting plate, a lead forming plate, and solder points is provided. A notch is formed on an edge of the chip supporting plate. The thickness of the lead forming plate is less than the thickness of the chip supporting plate. The lead forming plate has a main body, inner leads, and a connecting rod. The inner leads and the connecting rod are extended from an edge of the main body. The connecting rod has an end portion fitting the notch. The solder points are located at the boundary between the end portion and the notch for structurally connecting the connecting rod and the chip supporting plate.
Owner:ADVANCED SEMICON ENG INC

Method for preparing micro-frequency T-shaped power divider on metal substrate

The invention relates to a method for preparing a micro-radio-frequency T-shaped power divider on a metal base, and belongs to the technical field of micro-manufacturing. A gel column used for supporting an inner conductor is manufactured by utilizing SU-8 negative photoresist on a copper base by adopting a UV-LIGA technology, then a graphic glue film is manufactured by utilizing AZ50XT positive photoresist, and structures of a metal frame, the inner conductor, a top cover and the like are obtained through a copper electroforming technology. Finally, the AZ50XT glue film is dissolved by utilizing acetone, and the T-shaped power divider is obtained. According to the method for preparing the micro-radio-frequency T-shaped power divider on the metal base, a traditional silicon base is abandoned and the metal base is used, the problem that the silicon base is prone to being broken into pieces in the manufacturing process is solved, further, a metal conducting layer is not needed to be sputtered on the base, and the process steps are reduced. Meanwhile, when the AZ50XT glue film is removed, heating is not needed, and heat stress cannot be generated inside the structure, so that the probability of failure of manufacturing is reduced.
Owner:DALIAN UNIV OF TECH

Image sensor

There is provided an image sensor including: a plurality of first electrodes respectively formed within a plurality of pixel areas, the pixel areas being formed on a substrate; a protection layer formed on an upper surface of the substrate and including a plurality of contact holes respectively exposing the first electrodes of the pixel areas; a plurality of auxiliary electrodes respectively contacting with the first electrodes through the contact holes and extending to an upper surface of the protection layer of the pixel area; a photoconductive layer formed on both the first electrodes and on the auxiliary electrodes; and a second electrode formed on the photo conductive layer.
Owner:RAYENCE +1

Method for the production of a connecting rod

ActiveUS10746221B2High precisionLess of a tendency to bend during drillingConnecting rodsShaftsMetal powderMechanical engineering
A method produces a connecting rod from a sintered material, which rod has at least one bore having a center axis, and has a first connecting rod eye in a connecting rod head, and a second connecting rod eye in a connecting rod foot, wherein the connecting rod head is connected with the connecting rod foot with a connecting rod shaft, wherein the bore is configured in the connecting rod shaft, wherein furthermore, the connecting rod is produced from a metallic powder, in accordance with a sintering process, for which purpose the powder is pressed into the corresponding mold to form a green compact, the bore is introduced into the green compact, and the green compact is afterward sintered. The bore is introduced into the green compact as a first and second partial bore, proceeding from the connecting rod foot and from the connecting rod head.
Owner:MIBA SINTER AUSTRIA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products