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57results about How to "Strong Gap Filling Capability" patented technology

Hydrogen assisted undoped silicon oxide deposition process for HDP-CVD

A substrate processing apparatus comprising a substrate processing chamber, a gas distribution system operatively coupled to the chamber, a high density plasma power source, a controller operatively coupled to the gas distribution system and the high density plasma power source and a memory coupled to the controller. The memory includes computer instructions embodied in a computer-readable format. The computer instructions comprise (i) instructions that control the gas distribution system to flow a process gas comprising a silane gas, an oxygen-containing source, an inert gas and a hydrogen-containing source that is either molecular hydrogen or a hydride gas that does not include silicon, boron or phosphorus and (ii) instructions that control the high density plasma source to form a plasma having an ion density of at least 1×1011 ions / cm3 from the process gas to deposit the silicon oxide layer over the substrate.
Owner:APPLIED MATERIALS INC

Plating apparatus and method

An apparatus for plating a conductive film directly on a substrate with a barrier layer on top includes anode rod (1) placed in tube (109), and anode rings (2), and (3) placed between cylindrical walls (107) and (105), (103) and (101), respectively. Anodes (1), (2), and (3) are powered by power supplies (13), (12), and (11), respectively. Electrolyte (34) is pumped by pump (33) to pass through filter (32) and reach inlets of liquid mass flow controllers (LMFCs) (21), (22), and (23). Then LMFCs (21), (22) and (23) deliver electrolyte at a set flow rate to sub-plating baths containing anodes (3), (2) and (1), respectively. After flowing through the gap between wafer (31) and the top of the cylindrical walls (101), (103), (105), (107) and (109), electrolyte flows back to tank (36) through spaces between cylindrical walls (100) and (101), (103) and (105), and (107) and (109), respectively. A pressure leak valve (38) is placed between the outlet of pump (33) and electrolyte tank (36) to leak electrolyte back to tank (36) when LMFCs (21), (22), (23) are closed. A wafer (31) held by wafer chuck (29) is connected to power supplies (11), (12) and (13). A drive mechanism (30) is used to rotate wafer (31) around the z axis, and oscillate the wafer in the x, y, and z directions shown. Filter (32) filters particles larger than 0.1 or 0.2 mum in order to obtain a low particle added plating process.
Owner:ACM RES

Plating apparatus and method

An apparatus for plating a conductive film directly on a substrate with a barrier layer on top includes anode rod (1) placed in tube (109), and anode rings (2), and (3) placed between cylindrical walls (107) and (105), (103) and (101), respectively. Anodes (1), (2), and (3) are powered by power supplies (13), (12), and (11), respectively. Electrolyte (34) is pumped by pump (33) to pass through filter (32) and reach inlets of liquid mass flow controllers (LMFCs) (21), (22), and (23). Then LMFCs (21), (22) and (23) deliver electrolyte at a set flow rate to sub-plating baths containing anodes (3), (2) and (1), respectively. After flowing through the gap between wafer (31) and the top of the cylindrical walls (101), (103), (105), (107) and (109), electrolyte flows back to tank (36) through spaces between cylindrical walls (100) and (101), (103) and (105), and (107) and (109), respectively. A pressure leak valve (38) is placed between the outlet of pump (33) and electrolyte tank (36) to leak electrolyte back to tank (36) when LMFCs (21), (22), (23) are closed. A wafer (31) held by wafer chuck (29) is connected to power supplies (11), (12) and (13). A drive mechanism (30) is used to rotate wafer (31) around the z axis, and oscillate the wafer in the x, y, and z directions shown. Filter (32) filters particles larger than 0.1 or 0.2 mum in order to obtain a low particle added plating process.
Owner:ACM RES

Semiconductor device including field effect transistors laterally enclosed by interlayer dielectric material having increased intrinsic stress

ActiveUS20090061645A1Increased charge carrier mobilityImproved mechanismTransistorSemiconductor/solid-state device manufacturingDielectricField-effect transistor
By appropriately treating an interlayer dielectric material above P-channel transistors, the compressive stress may be significantly enhanced, which may be accomplished by expanding the interlayer dielectric material, for instance, by providing a certain amount of oxidizable species and performing an oxidation process.
Owner:ADVANCED MICRO DEVICES INC

Enhanced grooved Schottky diode rectification device and fabrication method thereof

The invention discloses an enhanced grooved Schottky diode rectification device. Grooves extend from the upper surface of an epitaxial layer to a middle part of the epitaxial layer, a monocrystalline silicon boss of a first conductive type is formed at the region of the epitaxial layer between the adjacent grooves, Schottky barrier contact is formed between the top surface of the monocrystalline silicon boss and an upper metal layer, a gate groove is arranged in the grooves and filled with conductive polycrystalline silicon, ohmic contact is formed between the conductive polycrystalline silicon and the upper metal layer, the gate groove and the epitaxial layer are isolated by silicon dioxide, a doped region of a second conductive type is arranged in the monocrystalline silicon boss and attached to the side surface of the groove, the heavily-doped region of the second conductive type is arranged between the top of the doped region of the second conductive type and the upper surface of the epitaxial layer, both the doped region of the second conductive type and the heavily-doped region of the second conductive type form a pn junction interface with the epitaxial layer. The device of the invention modulates electric field distribution of a device during reverse bias, enhances a reverse voltage blocking capacity of the device, and provides more flexibility for performance adjustment of the device.
Owner:SUZHOU SILIKRON SEMICON CO LTD

Trenched Schottky-barrier diode and manufacturing method thereof

The invention discloses a trenched Schottky-barrier diode, and solves the problems that a conventional trenched Schottky-barrier diode is lower in performance and reliability, high in reverse current leakage and poor in reverse blocking capability. The doping density of an epilayer gradually increases from the top to bottom, a second conduction type non-uniformly doped conductive polycrystalline silicon of which the doping density gradually decreases from the top to bottom is filled in trenches, second conduction type heavily doped lug boss apex angle protection areas are formed at the apex angles on two sides of lug bosses, and a Schottky-barrier metal layer in ohmic contact with the top surfaces of both the conductive polycrystalline silicon and the lug boss apex angle protection areas is added to the bottom surface of an anodal metal layer. The trenched Schottky-barrier diode provided by the invention has the advantages of low reverse current leakage, good voltage reverse blocking capability and excellent reliability. The invention also provides a manufacturing method of the trenched Schottky-barrier diode, which has the advantages of less steps and low manufacturing cost and can effectively isolate areas from damage by the technological process and contamination of impurities due to local impairment of isolating layers.
Owner:HANGZHOU LION MICROELECTRONICS CO LTD

High-density plasma (HDP) chemical vapor deposition (CVD) methods and methods of fabricating semiconductor devices employing the same

In one embodiment, a semiconductor substrate is placed into a process chamber. A gas mixture including a silicon-containing gas, a fluorine-containing gas, an inert gas, and an oxygen gas is introduced into the chamber at a pressure range of from about 30 mTorr to about 90 mTorr. During this time, deposition and etching processes are concurrently performed using a plasma to form a high-density plasma (HDP) insulating layer on the semiconductor substrate. A ratio of deposition to etching is from about 3:1 to about 10:1. A ratio of a flow rate of the fluorine-containing gas to a flow rate of the silicon-containing gas is less than about 0.9.
Owner:SAMSUNG ELECTRONICS CO LTD

Heat-conducting material

The invention relates to a heat-conducting material which comprises the following components in parts by weight: 20-50 parts of PBT (polybutylene terephthalate), 2-4 parts of PET (polyethylene terephthalate), 3-4 parts of polyurethane, 2-5 parts of nylon, 2-5 parts of heat-conducting filler, 2-5 parts of polyethyleneglycol, 20-30 parts of silicone rubber, 0.5-0.9 part of vulcanizing agent, 0.33-0.9 part of antioxidant, 0.3-0.5 part of lubricant, 2-3 parts of graphite, 3-4 parts of silicone rubber and 1-2 parts of combustion improver. The heat-conducting material has favorable gap filling capacity and moldability, can perform favorable heat transfer functions, is convenient for assembly and disassembly, and has favorable heat-conducting effects.
Owner:裴寿益

Schottky barrier diode rectifying device and manufacture method thereof

The invention discloses a Schottky barrier diode rectifying device and a manufacture method thereof. According to the device, an active region is formed by parallel connection of a plurality of Schottky barrier diode unit cells; each unit cell comprises a first conductive light dope monocrystalline silicon epitaxial layer which is connected with an upper part of a silicon chip and an upper metal layer, grooves which are at an upper part of the epitaxial layer and whose openings are at upper surface of the epitaxial layer, and a boss which is formed between adjacent grooves in an epitaxial layer area; a lower metal layer and a substrate form ohmic contact; the upper metal layer is connected with upper surfaces of a first conductive polysilicon zone and a second conductive polysilicon zone to form ohmic contact; the upper metal layer is connected with an upper surface of the boss to form Schottky barrier contact; lower bottom depth of the first conductive polysilicon zone is larger than lower bottom depth of the second conductive polysilicon zone; and thickness of a first isolation oxidation layer is larger than thickness of the second isolation oxidation layer. According to the device and the method of the invention, reverse voltage blockout capability of the device is enhanced substantially, slit filling capability is improved, thus much flexibility is provided for device structure design, and device reliability is reinforced.
Owner:SUZHOU SILIKRON SEMICON CO LTD

Interlayer dielectric material in a semiconductor device comprising stressed layers with an intermediate buffer material

A highly stressed dielectric material, such as a tensile stressed material, may be deposited in a conformal manner so as to respect any deposition constraints caused by pronounced surface topography of highly scaled semiconductor devices, followed by the deposition of a buffer material having enhanced gap-filling capabilities. Thereafter, a further stress-inducing layer is deposited to form a doublet structure, which acts on the transistor elements, thereby enhancing overall performance, without increasing the probability of creating deposition-related irregularities. Hence, production yield as well as performance of highly scaled semiconductor devices may be increased.
Owner:ADVANCED MICRO DEVICES INC
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