84results about How to "Complete filling" patented technology

A thermally-conductive interface for conductively cooling a heat-generating electronic component having an associated thermal dissipation member such as a heat sink. The interface is formed as a self-supporting layer of a thermally-conductive material which is form-stable at normal room temperature in a first phase and substantially conformable in a second phase to the interface surfaces of the electronic component and thermal dissipation member. The material has a transition temperature from the first phase to the second phase which is within the operating temperature range of the electronic component.

Methods, materials, and systems are described for forming conformal dielectric layers containing silicon and nitrogen (e.g., a silicon-nitrogen-hydrogen (Si—N—H) film) from a carbon-free silicon-and-nitrogen precursor and radical-nitrogen precursor. The carbon-free silicon-and-nitrogen precursor is predominantly excited by contact with the radical-nitrogen precursor. Because the silicon-and-nitrogen film is formed without carbon, the conversion of the film into hardened silicon oxide is done with less pore formation and less volume shrinkage. The deposited silicon-and-nitrogen-containing film may be wholly or partially converted to silicon oxide which allows the optical properties of the conformal dielectric layer to be selectable. The deposition of a thin silicon-and-nitrogen-containing film may be performed at low temperature to form a liner layer in a substrate trench. The low temperature liner layer has been found to improve the wetting properties and allows flowable films to more completely fill the trench.

A system is provided for the storage, preparation and administration of calcium phosphate cements. The subject invention provides a storage means for storing a two component calcium phosphate cement having a liquid component and a dry component. Also provided is a preparation means for combining the two components of the cement while present in the storage means. The subject invention further provides a means for administering the prepared cement to a physiological site. The subject devices and methods find use in a variety of applications where the introduction of a flowable material capable of setting to a solid calcium phosphate mineral to a physiological site is desired, including dental and orthopedic applications.

A spinal vertebral implant includes a substantially rectangular shaped base section made from a solid piece of bone. A nose section extends integrally from the substantially rectangularly shaped base section and preferably has a generally tapering shape to foster entry between adjacent vertebrae. The nose section tapers distally and inwardly from the base section to form a generally pointed or rounded distal tip portion and comprises a solid piece of bone. Serrated sides assist the implant in gripping adjacent upper and lower vertebrae and in being maintained therebetween. The serrated sides are angled in a manner that encourages the implant to be placed between the vertebrae and locked therebetween upon such placement. First and second implants may be placed into respective left and right sides of an intervertebral space. A method for placing one or more implants between the adjacent vertebrae comprises forming a slot configured to receive an implant and inserting the implant into the slot. Each slot is preferably formed from an upper slot portion and a lower slot portion in the posterior portion of adjacent upper and lower vertebrae, respectively. Instruments for performing the method include osteotomes, impactors, and spacers.

Abstract of the Disclosure A method of depositing a silicon oxide layer over a substrate having a trench formed between adjacent raised surfaces. In one embodiment the silicon oxide layer is formed in a multistep process that includes depositing a first portion of layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a first process gas comprising a silicon source, an oxygen source and helium and/or molecular hydrogen with high D/S ratio, for example, 10-20 and, thereafter, depositing a second portion of the silicon oxide layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a second process gas comprising a silicon source, an oxygen source and molecular hydrogen with a lower D/S ratio of, for example, 3-10.

In a stacked chip configuration, and manufacturing methods thereof, the gap between a lower and an upper chip is filled completely using a relatively simple process that eliminates voids between the lower and upper chips and the cracking and delamination problems associated with such voids. The present invention is applicable to both chip-level bonding and wafer-level bonding approaches. A photosensitive polymer layer is applied to a first chip, or wafer, prior to stacking the chips or stacking the wafers. The photosensitive polymer layer is partially cured, so that the photosensitive polymer layer is made to be structurally stable, while retaining its adhesive properties. The second chip, or wafer, is stacked, aligned, and bonded to the first chip, or wafer, and the photosensitive polymer layer is then cured to fully bond the first and second chips, or wafers. In this manner, adhesion between chips/wafers is greatly improved, while providing complete gap fill. In addition, mechanical reliability is improved, alleviating the problems associated with cracking and delamination, and leading to an improvement in device yield and device reliability.

A method of fabricating a semiconductor device, having an interim reduced-oxygen Cu-Zn alloy thin film (30) electroplated on a blanket Cu surface (20) disposed in a via (6) by electroplating, using an electroplating apparatus, the Cu surface (20) in a unique chemical solution containing salts of Zn and Cu, their complexing agents, a pH adjuster, and surfactants; and annealing the interim electroplated Cu-Zn alloy thin film (30); filling the via (6) with further Cu (26); annealing and planarizing the interconnect structure (35); and a semiconductor device thereby formed. The reduction of electromigration in copper interconnect lines (35) is achieved by decreasing the drift velocity in the copper line (35)/via (6), thereby decreasing the copper migration rate as well as the void formation rate, by using an interim conformal Cu-rich Cu-Zn alloy thin film (30) electroplated on a Cu surface (20) from a stable chemical solution, and by controlling the Zn-doping thereof, which improves also interconnect reliability and corrosion resistance.

The invention discloses a smelting and casting method and a casting device of a titanium-based amorphous composite material. The smelting and casting method has the advantages that the force effect in the electromagnetic induction principle is utilized, alloy in a crucible is suspended in the air for smelting, so that the pollution caused by contact with the crucible is avoided and the control for the alloy heating state is realized; when the smelting process is finished, a heating power supply is switched off, an electromagnetic valve for suction casting or spray casting is opened, so that the rapid mold-filling of alloy solution is realized; in the spray-casting process, the control to the spray-casting speed is realized by changing the level of the air pressure in a gas storage tank, and further the amorphous composite material with different microscopic structures is prepared by controlling the solidification process; the defects in the prior art are overcome, the large-size titanium-based amorphous composite material is obtained by integrating the prior art, the stable control of the process to the organization structure is realized by adjusting process parameters such as temperature, temperature holding time, circular heating times and casting speed, and an ideal optimized design structure is obtained.

Devices and methods for producing purified water. The device includes a reverse osmosis subsystem, a dehumidification subsystem and a purified water storage tank fluidly coupled to the subsystems such that purified water produced by each can be locally stored. A vehicular platform, such as a ship, can be used to locate the device adjacent a supply of saline water and humid air. A saline water inlet, membrane and purified water outlet cooperate in the reverse osmosis subsystem to allow preferential passage of water relative to salt in a saline water supply, while the dehumidification subsystem includes a heat exchanger that extracts moisture from the ambient humid air. Purified water produced by each of the subsystems can be used as a potable water source. When used in conjunction with a ship, part or all of the reverse osmosis subsystem can be submersed to a depth sufficient to generate a hydrostatic pressure that is in turn sufficient to passively operate the reverse osmosis membrane such that additional pressurizing equipment, such as a pump, is not needed. Furthermore, the temperature of the water purified by the reverse osmosis subsystem may be low enough to be used as a condensing agent for the ambient humid air passing through the dehumidification subsystem.

A process for making a framed electrode by injection molding. The process comprises placing a flat piece of electrode material on a shrinkage-free under mold frame and attaching it thereto in a manner which substantially prevents the piece and the frame from moving relative to each other, over molding the resultant assembly by injecting a molten resin into an over molding cavity which contains the assembly, and allowing the resin to solidify. This Abstract is not intended to define the invention disclosed in the specification, nor intended to limit the scope of the invention in any way.

According to a method of forming a metal wiring of a semiconductor device, a contact plug is formed at height lower than the contact hole, which is formed on an interlayer insulation layer, and then a metal wiring is formed over the contact plug and interlayer insulation layer to completely fill inside of the contact hole, decreasing process difficulty, ensuring reproducibility, and improving electrical property.

Devices and methods for producing purified water. The device includes a reverse osmosis subsystem, a dehumidification subsystem and a purified water storage tank fluidly coupled to the subsystems such that purified water produced by each can be locally stored. A vehicular platform, such as a ship, can be used to locate the device adjacent a supply of saline water and humid air. A saline water inlet, membrane and purified water outlet cooperate in the reverse osmosis subsystem to allow preferential passage of water relative to salt in a saline water supply, while the dehumidification subsystem includes a heat exchanger that extracts moisture from the ambient humid air. Purified water produced by each of the subsystems can be used as a potable water source. When used in conjunction with a ship, part or all of the reverse osmosis subsystem can be submersed to a depth sufficient to generate a hydrostatic pressure that is in turn sufficient to passively operate the reverse osmosis membrane such that additional pressurizing equipment, such as a pump, is not needed. Furthermore, the temperature of the water purified by the reverse osmosis subsystem may be low enough to be used as a condensing agent for the ambient humid air passing through the dehumidification subsystem.