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123results about How to "Small area" patented technology

Semiconductor device and manufacturing method thereof

It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof. Particularly, it is an object to bond various elements typified by a TFT, (a thin film diode, a photoelectric conversion element comprising a PIN junction of silicon, or a silicon resistance element) to a flexible film to provide a lighter semiconductor device and a manufacturing method thereof.When a metal layer 11 is provided over a substrate, an oxide layer 12 is provided in contact with the metal layer 11, a layer to be peeled 13 is formed, and the metal layer 11 is irradiated with a laser beam to perform oxidization and form a metal oxide layer 16, a clear separation is possible with a physical means within the metal oxide layer 12 or at an interface between the metal oxide layer 16 and the oxide layer 12.
Owner:SEMICON ENERGY LAB CO LTD

Imaging Device and Method for Reading Signals From Such Device

Each pixel cell (12) of an image sensor (10) is made of a 4-Tr structure, in which only one Tr for resetting a column (X) is so added to an ordinary 3-Tr APS as to reset only an arbitrary pixel selectively, thereby to confine the pixel size. When a pixel signal is to be read, the period, for which the pixel signals composing an ordinary image of one frame are read, is finely divided so that the pixel signals of the pixels receiving an ID light for the period are read out bit by bit and repeatedly. At this time, for only the column being read, an electric current is fed to a read amplifier in the pixel cell (12) or a variable gain amplifier in an output unit (14), thereby to suppress the power consumption. As a result, a lower power consumption and a higher pixel formation can be attained in an image pickup device for picking up an image and for acquiring the ID information of a light beacon existing in the image pickup range.
Owner:JAPAN SCI & TECH CORP +1

Nanowire- based solar cell structure

The solar cell structure according to the present invention comprises a nanowire (205) that constitutes the light absorbing part of the solar cell structure and a passivating shell (209) that encloses at least a portion of the nanowire (205). In a first aspect of the invention, the passivating shell (209) of comprises a light guiding shell (210), which preferably has a high- and indirect bandgap to provide light guiding properties. In a second aspect of the invention, the solar cell structure comprises a plurality of nanowires which are positioned with a maximum spacing between adjacent nanowires which is shorter than the wavelength of the light which the solar cell structure is intended to absorbin order to provide an effective medium for light absorption. Thanks to the invention it is possible to provide high efficiency solar cell structures.
Owner:QUNANO

Semiconductor device and manufacturing method thereof

A semiconductor device having high reliability, in which TFTs with appropriate structures for the circuit functions are arranged, is provided. Gate insulating films (115) and (116) of a driver TFT are designed thinner than a gate insulating film (117) of a pixel TFT in a semiconductor device having a driver circuit and a pixel section on the same substrate. In addition, the gate insulating films (115) and (116) of the driver TFT and a dielectric (118) of a storage capacitor are formed at the same time, so that the dielectric (118) may be extremely thin, and a large capacity can be secured.
Owner:SEMICON ENERGY LAB CO LTD

Method for transferring a graphene layer

A method transfers a graphene layer from a donor substrate onto a final substrate. The method includes: providing a metal layer on the donor substrate; and growing a graphene layer on the metal layer. The method also includes: laminating a dry film photo-resist on the graphene layer; laminating a tape on the dry film photo-resist; chemically. etching the metal layer, obtaining an initial structure that includes the tape, the dry film photo-resist and the graphene layer; laminating the initial structure on the final substrate; thermally realizing the tape, so as to obtain an intermediate structure that includes the dry film photo-resist, the graphene layer and the final substrate; removing the dry film photo-resist; and obtaining a final structure that includes the final substrate with a transferred graphene layer.
Owner:STMICROELECTRONICS SRL

Capacitor element and method for fabricating the same

A capacitor element is provided which is composed of a lower electrode, an upper electrode formed in opposing relation to the lower electrode, and a capacitor dielectric film made of a ferroelectric material or a high dielectric material and formed between the lower and upper electrodes. The lower electrode, the capacitor dielectric film, and the upper electrode are formed in a region extending at least from within a hole provided in an interlayer insulating film having a first hydrogen barrier film disposed on the upper surface thereof toward a position above the hole. A second hydrogen barrier film in contact with the first hydrogen barrier film is disposed to cover the upper surface of the upper electrode and the side surface of the portion of the upper electrode which has been formed above the hole.
Owner:GK BRIDGE 1

Memory element and display device

The present invention provides a memory element includes a thin film transistor configured to have a semiconductor thin film and a pair of gate electrodes that vertically sandwich the semiconductor thin film with intermediary of insulating films therebetween, and a capacitor configured to be connected to a first gate electrode of the pair of gate electrodes, wherein data is stored in the capacitor connected to the first gate electrode, and data stored in the capacitor is read out by controlling a second gate electrode of the pair of gate electrodes.
Owner:JAPAN DISPLAY WEST

Semiconductor integrated circuit device for driving display device and manufacturing method thereof

A semiconductor integrated circuit device for driving an LCD, COG chip packaging is performed. To achieve this, an elongate and relatively thick gold bump electrode is formed over an aluminum-based pad having a relatively small area. In a wafer probe test performed after formation of the gold bump electrode, a cantilever type probe needle having gold as a main component and having an almost perpendicularly bent tip portion is used. The diameter of this probe needle in the vicinity of its tip is usually almost the same as the width of the gold bump electrode. This makes it difficult to perform the wafer probe test stably. To counteract this, a plurality of bump electrode rows for outputting a display device drive signal are formed such that the width of inner bump electrodes is made greater than the width of outer bump electrodes.
Owner:RENESAS ELECTRONICS CORP

Methods of scanning an object that includes multiple regions of interest using an array of scanning beams

A multi beam inspection method and system. The inspection system includes: (i) a beam array generator adapted to generate an array of beams characterized by a beam array axis; and (ii) at least one mechanism adapted to position the object under the array of beams such that at least two beams that are positioned along a beam array axis scan substantially simultaneously at least two regions of interest of the object, wherein the first axis is oriented in relation to the beam array axis.
Owner:APPL MATERIALS ISRAEL LTD

Fuel shut-off valve assembly with associated components and methods of making and assembling the same

ActiveUS20050121085A1Small areaRelief unequalized pressure conditionCheck valvesPipeline systemsEngineeringVALVE PORT
A shut-off valve assembly includes a one-piece housing having an inlet and an outlet. During manufacture, the housing is formed with an inlet end plate and a fully open end opposite the end plate. A valve door assembly including a flapper door is secured in the housing, and includes a seal between the flapper door and the housing. The open end is then reformed to provide an outlet from the housing. In a fuel system, a cover assembly is releasably secured to the housing.
Owner:ILLINOIS TOOL WORKS INC

Semiconductor device and method of manufacturing the same

A fuse element is laminated on a resistor and the resistor is formed in a concave shape below a region in which cutting of the fuse element is carried out with a laser. Accordingly, there can be provided a semiconductor device which occupies a small area, causes no damage on the resistor in the cutting of the fuse element, has a small contact resistance occurred between elements, and has stable characteristics, and a method of manufacturing the same.
Owner:ABLIC INC

Omnidirectional vectored thrust cycloidal propeller

The invention discloses an omnidirectional vectored thrust cycloidal propeller, which comprises a propeller, a cycloidal oar and a cycloidal oar eccentric circle positioning mechanism, wherein the cycloidal oar comprises cycloidal oar blades in the same number as propeller blades, control pull rods, an operating rock arm and a cycloidal oar blade spherical hinge; each cycloidal oar blade is hinged with a propeller blade at rear grazing point of the front edge of the propeller blade; the airfoil surface of each cycloidal oar blade is vertical to that of a propeller blade; an eccentric circular ring of the cycloidal oar eccentric circle positioning mechanism is sleeved on a propeller shaft; the connecting rod of the spherical head of each spherical hinge is connected with the eccentric circular ring respectively; each control pull rod is connected with a cycloidal oar blade; the operating rock arm is positioned in a spanwise symmetrical surface of the cycloidal oar blades; the cycloidal oar blade spherical hinge at one end of the operating rock arm is connected with one end of the control pull rods; and the other end of the operating rock arm is fixedly connected to a cycloidal oar blade tubular beam. The omnidirectional vectored thrust cycloidal propeller of the invention combines the advantages of the cycloidal oar and the conventional propeller and has an omnidirectional vectored thrust while improving aerodynamic efficiency of the conventional propeller.
Owner:NORTHWESTERN POLYTECHNICAL UNIV

Impeller of centrifugal fan and method and apparatus for manufacturing the same

An impeller of a centrifugal fan includes multiple blades arranged annularly around a rotational axis, a main plate, a shroud, main plate-side welded portions between main plate-side blade axial ends of the blades and the main plate, and shroud-side welded portions between shroud-side blade axial ends of the blades and the shroud. The main plate is arranged opposite to main plate-side blade axial ends. The shroud is arranged opposite to shroud-side blade axial ends. The main plate-side welded portions have main plate-side welding holes that are recesses extending through the main plate to portions of the main plate-side blade axial ends. The shroud-side welded portions have shroud-side welding holes that are recesses extending through the shroud to portions of the shroud-side blade axial ends.
Owner:DAIKIN IND LTD

Powder compaction and enrobing

Powder, e.g. of a medicament, is compacted and enrobed to produce compacted powder slugs by preferably mechanically compacting a powder and forming a film of material, preferably hydroxy propyl methyl cellulose, by vacuum or pressure differential, about the surface of the powder thus compacted.
Owner:BIOPROGRESS TECH INT

Method of making a solid state inductor

A solid-state inductor and a method for forming a solid-state inductor are provided. The method comprises: forming a bottom electrode; forming a colossal magnetoresistance (CMR) thin film overlying the bottom electrode; forming a top electrode overlying the CMR thin film; applying an electrical field treatment to the CMR thin film in the range of 0.4 to 1 megavolts per centimeter (MV / cm) with a pulse width in the range of 100 nanoseconds (ns) to 1 millisecond (ms); in response to the electrical field treatment, converting the CMR thin film into a CMR thin film inductor; applying a bias voltage between the top and bottom electrodes; and, in response to the applied bias voltage, creating an inductance between the top and bottom electrodes. When the applied bias voltage is varied, the inductance varies in response.
Owner:SHARP LAB OF AMERICA

Linear frequency-modulated signal generator with predistortion function

ActiveCN104267385AWith pre-distortion functionCompensate for nonlinear effectsWave based measurement systemsAngle demodulation by oscillations conversionSignal generatorPredistortion
The invention provides a linear frequency-modulated signal generator with a predistortion function. The linear frequency-modulated signal generator comprises an FPGA unit, a digital-analog conversion unit and a filtering unit, wherein the FPGA unit is used for generating a phase position predistortion digital linear frequency-modulated signal and conducting amplitude predistortion processing on the phase position predistortion digital linear frequency-modulated signal to generate two orthogonal amplitude-phase predistortion digital linear frequency-modulated signals; the digital-analog conversion unit is connected with the output end of the FPGA unit and used for converting the two orthogonal digital linear frequency-modulated signals subjected to amplitude-phase predistortion into two orthogonal discrete analog linear frequency-modulated signals; the filtering unit is connected with the digital-analog conversion unit and used for filtering out frequency components beyond a preset frequency range of the two orthogonal discrete analog linear frequency-modulated signals to obtain two continuous orthogonal analog linear frequency-modulated signals. The linear frequency-modulated signal generator can compensate for non-linear influences of an analog circuit on the linear frequency-modulated signals by means of amplitude-phase predistortion processing, and guarantee that the high-quality linear frequency-modulated signals can be obtained finally.
Owner:INST OF ELECTRONICS CHINESE ACAD OF SCI

Discrimination apparatus

Provided is a discrimination apparatus including: an impact application unit for applying an impact to an object to be discriminated; a signal output unit for outputting a signal corresponding to an impact applied by the impact application unit; a discrimination unit for discriminating the object to be discriminated on basis of the signal from the signal output unit; and a pressure-receiving position correction member having a pressure-receiving part for receiving an impact force applied by the impact application unit, and an action part for acting the impact force received at the pressure-receiving part on a predetermined site of the signal output unit.
Owner:CANON KK

Testing device of 3D-SIC (Three-Dimensional-Semiconductor Integrated Circuit) through silicon vias provided with signal rebounding module

The invention discloses a testing device of a 3D-SIC (Three-Dimensional-Semiconductor Integrated Circuit) through silicon vias provided with a signal rebounding module. A sending end is connected with a receiving end by through a plurality of silicon vias TSVs. The sending end comprises a first tested chip, a decoder, a control unit CU, a latch D and a bidirectional switch DSW. The receiving end comprises a second tested chip and a signal rebounding module. The signal rebounding module comprises a signal generator F, a plurality of delay cells and a plurality of three-state gates. The upper ends of the TSVs are connected with the delay cells M and the signal generator F at the receiving end. The lower ends of the TSVs are connected with the decoder and the DSW at the sending end. The decoder, the latch D and the DSW are connected with the CU. The latch D is further connected with the DSW. The testing device of the 3D-SIC through silicon vias provided with the signal rebounding module can effectively solve the problem that failed TSVs in the 3D chip preparing process are hard to detect effectively, and has the advantages of smaller area and practical expenses and lower power consumption and the like.
Owner:HEFEI UNIV OF TECH

Corneal endothelial preparation which enables cells to grow in vivo

ActiveUS20100233240A1Small areaSuperior transplantationBiocideSenses disorderCorneal endothelial cellCorneal leucoma
The present invention provides a graft more suitable for the transplantation of corneal endothelial cells and an application method thereof. Specifically, the present invention provides a corneal endothelial preparation capable of cell proliferation in vivo, which contains a substrate and a corneal endothelial cell layer cultured on the substrate, and a treatment method of a disease selected from the group consisting of bullous keratopathy, corneal edema, corneal leukoma and corneal endothelial inflammation, which includes a step of transplanting the preparation to patients. As the substrate, collagen is used.
Owner:SENJU PHARMA CO LTD

A switch bootstrap charging circuit suitable for high-speed gate driving of GaN power device

A switch bootstrap charging circuit suitable for high-speed gate driving of a GaN power device belongs to the technical field of power management. A control logic module generates a first control signal and a second control signal according to the undervoltage signal and the low-side gate driving signal. The gate electrode of the first PMOS transistor is connected to the second control signal, thesource electrode thereof is connected to the supply voltage, and the drain electrode thereof is connected to the source electrode of the first NMOS transistor. An input end of the first inverter is connected with a first control signal, an output end of the first inverter is connected with an input end of the second inverter and is connected with a cathode of the first diode and a gate electrodeof the second NMOS transistor through a first capacitor; The anode of the first diode and the source of the second NMOS transistor are connected to a supply voltage; The gate electrode of the first NMOS transistor is connected to the drain electrode of the second NMOS transistor and is connected to the output end of the second inverter through the second capacitor, and the drain electrode of the second NMOS transistor serves as the output end of the switch bootstrap charging circuit. The invention can prevent the voltage on the bootstrap capacitor from being too large when charging, can realize on-chip integration, and has a simple circuit structure and high reliability. It is especially suitable for GaN high-speed gate drive.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA

Method and system for non-vascular sensor implantation

A method and system for non-vascular sensor implantation. An implant unit is implanted in an area of a body and a foreign body capsule is allowed to form around the area of the implant unit. The sensor may be directed into a body cavity such as, for example, the peritoneal space, subcutaneous tissues, the foreign body capsule, or other area of the body. A subcutaneous area of the body may be tunneled to place the sensor. The system may include an implant unit such as, for example, for delivering drug to a human body and a sensor for detecting a physiological parameter. The sensor may be separate from and connectable to the implant unit and may be placed in a non-vascular area of the human body.
Owner:MEDTRONIC MIMIMED INC

Method and apparatus for wafer wet processing

A gas dispenser in a process module for wet processing of wafer-shaped articles is substantially smaller than the article to be processed and is movable laterally of the article as it dispenses inert gas above the article.
Owner:LAM RES AG
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