The invention discloses a preparation method of a composite
nanofiltration heterostructure capable of generating
quantum dots on the side wall of a
nanowire and relates to the field of nano
engineering. An MOCVD device is applied to the preparation method. The preparation method comprises the flowing steps of depositing nano
metal particles or
metal film on an substrate, forming nano
alloy particles after annealing, using the nano
alloy particles as catalytic substances, generating the
nanowire in the direction perpendicular to the substrate, ending the axial growth of the
nanowire, and generating a single layer of
quantum dots or multiple
layers of the
quantum dots on the side wall of the nanowire. Due to the adoption of the MOCVD device, the quantum dots directly grow on the side wall of the nanowire which is in a hexagonal-column shape, tedious steps of an existing preparation method are simplified, and the preparation cost is reduced. Meanwhile, due to the fact that film covers the quantum dots, wherein the film and the nanowire are made of the same materials, the multiple
layers of the quantum dots can generate on the side wall of the nanowire, and the obtained composite
nanofiltration heterostructure is made to be better. Therefore the preparation method of the composite
nanofiltration heterostructure capable of generating the quantum dots on the side wall of the nanowire has a broad application prospect in a new generation of nano photoelectronic devices.