Preparation method of composite nanofiltration heterostructure capable of generating quantum dots on side wall of nanowire
A sidewall growth and heterogeneous structure technology, applied in the field of nano-engineering, can solve the problems of cumbersome steps, achieve wide application prospects, good performance, and simplify cumbersome steps
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[0031] The specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.
[0032] figure 1 It is a flowchart of a method for preparing a composite nanoheterostructure in which quantum dots are grown on the sidewalls of nanowires described in the embodiment of the present invention; Figure 2a ~d is a schematic diagram of the preparation process of the composite nano-heterostructure in which quantum dots are grown on the sidewall of the nanowire according to the embodiment of the present invention. Such as figure 1 As shown in Fig. 2, the method adopts MOCVD (Metal-organic Chemical Vapor Deposition, metal-organic compound chemical vapor deposition) equipment, specifically including:
[0033] Step A: If Figure 2a As shown, a layer of gold film...
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