32results about How to "Short thermal response time" patented technology

The invention discloses an optical readout full-hollow focal plane array provided with thermal sink structures and a manufacturing method thereof. Each pixel of the array comprises a framework and other parts such as a reflection board and the like in the framework, and the upper part of each pixel framework comprises a thermal sink structure formed by a thick metal film. The thermal sink structures enhance the thermal conductance of a whole film area and accelerate energy transmission, so that the temperature uniformity of the film area is improved greatly. A thermal crosstalk phenomenon caused by the fact that energy spreads along framework grids is eliminated, the response time is decreased, and the thermal imaging speed is accelerated. In addition, the thickness of a whole support framework is increased by 10 times, and the mechanical strength of the film area and the film smoothness are greatly improved. Besides, the frameworks tower above the plane where the parts of the pixels are in, so that reflection rays irradiated on the reflection boards can be separated from reflection rays irradiated on the frameworks, and imaging signals read by the reflection boards and reflection signals of the frameworks can be separated. The method is simple in process, short in production cycle and high in yield.

The invention provides a wafer level packaged hot air speed and air direction sensor realized by adopting a silicon substrate thinning process technology and a manufacturing method thereof. In a sensor chip, a heating element and a heat-sensitive temperature measuring element are manufactured by adopting a CMOS (Complementary Metal-Oxide-Semiconductor Transistor) process; a heat insulation groovewith the depth of 50 microns is formed between the heating element and the heat-sensitive temperature measuring element by adopting a dry etching process, so that transverse heat conduction effects between the heating element and the heat-sensitive temperature measuring element are reduced; a silicon substrate of a sensing chip is thinned by using a thinning process until the thickness of the silicon substrate is 80-100 microns, so that the heat conduction and the heat capacity of the substrate of the chip are lowered; and a ceramic substrate is attached to the back face of a thinned silicon chip to protect the silicon chip and sense the changes of the air speed and the air direction of the ambient temperature. By adopting the air speed and air direction sensor, wafer package is realized,the heat conduction loss of the silicon substrate and the heat capacity of the sensor chip are greatly lowered, and a large output signal and shorter response time can be obtained under low power consumption.

The present disclosure relates to an infrared detector and a preparation method thereof. The infrared detector includes a substrate, a dielectric layer, an electrode layer and a thermosensitive layer on the substrate. The electrode layer is located between the dielectric layer and the thermosensitive layer, and the dielectric layer is located on the substrate. The electrode layer is adjacent to one side of the substrate, and the electrode layer is arranged in contact with the thermosensitive layer; the infrared detector includes a plurality of infrared detector pixels arranged in a matrix, and the infrared detector pixels include an absorption plate structure, at least two micro-bridge columns and At least two beam structures, the absorption plate structure is connected to the corresponding micro-bridge column through the corresponding beam structure; the heat-sensitive layer covers the area where the absorption plate structure and the beam structure are located; wherein, the materials constituting the heat-sensitive layer include amorphous silicon, amorphous One or more of carbon, amorphous germanium or amorphous silicon germanium; the material constituting the electrode layer at least includes titanium. Through the technical solution of the present disclosure, the thermal response time of the infrared detector is reduced, and the infrared response rate of the infrared detector is improved.

The invention discloses a novel movable type energy storage device using superconductive tubes and copper foam phase-change materials. The novel movable type energy storage device using the superconductive tubes and the copper foam phase-change materials comprises a plurality of parallel single phase-change heat accumulators, wherein each single phase-change heat accumulator comprises a closed cylindrical shell; each shell comprises an outer sleeve, an inner metal sleeve and an interlayer; the interlayer of each shell is a cold water channel; a spiral guide ring is arranged in the interlayer of each shell; a superconductive tube is arranged in each shell; the upper end of each superconductive tube is sealed and inserted in the upper part of the inside of the corresponding shell; the lower end of each superconductive tube is open, is exposed outside the corresponding shell and is connected with a waste heat source; a phase-change material which is used for filling holes of copper foam is used for filling between the corresponding inner sleeve and the corresponding superconductive tube; the single phase-change heat accumulators are erected side by side; a water inlet of the upper end of each single phase-change heat accumulator is connected with a water inlet tube through a water collecting square tube; and a water outlet of the lower end of each single phase-change heat accumulator is connected with a water outlet tube through a three-way tube. The novel movable type energy storage device recycles the waste heat by the superconductive tubes, and is quick in heat transmission and high in heat conduction efficiency; and by the copper foam, the heat conduction coefficient of the phase-change materials is improved by the copper foam, and heat storage rate and heat release rate are increased.

The invention discloses an infrared focal plane array and an infrared thermal imaging system based on the infrared focal plane array, belonging to the field of infrared thermal imaging. The infrared focal plane array includes several periodically arranged array units, and each array unit includes a substrate, a thermal insulation support layer, a sub-wavelength grating structure and an infrared absorption layer. The infrared thermal imaging system based on the infrared focal plane array includes a wavelength conversion module, a readout signal generation module and an imaging display module; the core component of the wavelength conversion module is an infrared focal plane array; the infrared radiation from the target is focused on the focal plane, The infrared image information of the target is converted into temperature distribution information on the focal plane array; the readout signal generating module is used to generate linearly polarized narrow-band near-infrared light and make it reflected by the infrared focal plane array and then enter the imaging display module to realize the visualization of the target object . The invention realizes the thermal imaging system design of large area array, high pixels, low cost and fast response.

The present disclosure relates to an infrared detector and a preparation method thereof. The infrared detector includes a substrate, a thermosensitive layer on the substrate, a dielectric layer, an electrode layer and a passivation layer, and the dielectric layer is located between the thermosensitive layer and the electrode layer. , the heat-sensitive layer is located on the side of the dielectric layer close to the substrate, and the passivation layer is located on the side of the electrode layer away from the substrate; the infrared detector includes a plurality of infrared detector pixels arranged in a matrix, and the infrared detector pixel includes an absorbing plate Structure, at least two micro-bridge columns and at least two beam structures, the absorbing plate structure is connected to the corresponding micro-bridge column through the corresponding beam structure; the heat-sensitive layer covers the area where the absorbing plate structure and the beam structure are located, and the passivation layer covers the absorbing plate The region where the structure and the beam structure are located; wherein, the material constituting the heat sensitive layer includes one or more of amorphous silicon, amorphous carbon, amorphous germanium or amorphous silicon germanium. Through the technical proposal of the present disclosure, the thermal response time of the infrared detector is reduced, and the infrared response rate of the infrared detector is improved.