Optical readout fully hollow focal plane array with heat sink structure and manufacturing method thereof

Abstract

The invention discloses an optical readout full-hollow focal plane array provided with thermal sink structures and a manufacturing method thereof. Each pixel of the array comprises a framework and other parts such as a reflection board and the like in the framework, and the upper part of each pixel framework comprises a thermal sink structure formed by a thick metal film. The thermal sink structures enhance the thermal conductance of a whole film area and accelerate energy transmission, so that the temperature uniformity of the film area is improved greatly. A thermal crosstalk phenomenon caused by the fact that energy spreads along framework grids is eliminated, the response time is decreased, and the thermal imaging speed is accelerated. In addition, the thickness of a whole support framework is increased by 10 times, and the mechanical strength of the film area and the film smoothness are greatly improved. Besides, the frameworks tower above the plane where the parts of the pixels are in, so that reflection rays irradiated on the reflection boards can be separated from reflection rays irradiated on the frameworks, and imaging signals read by the reflection boards and reflection signals of the frameworks can be separated. The method is simple in process, short in production cycle and high in yield.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to an optical readout fully hollow focal plane array (FocalPlaneArray, FPA) with a heat sink structure and a manufacturing method thereof. Background technique [0002] In the field of MEMS (MicroElectroMechanicalsystems, microelectromechanical systems) technology, infrared detectors have been widely used in medical, industrial, military, commercial, scientific research and other fields. Usually can be divided into photoelectric infrared detectors and thermal infrared detectors. Photoelectric infrared detectors have the characteristics of fast response time and low noise equivalent temperature difference (NoiseEquivalentTemperatureDifference, NETD), but because they need to separate photoelectrons and thermal electrons during operation, refrigeration is required (working in liquid nitrogen (77K) environment), This kind of infrared detector has large volume, high ...

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Problems solved by technology

However, due to its fully hollowed-out feature, the energy of the pixel cannot be transferred to the substrate in time. It can only be transferred to the substrate through the supporting frame to the edge of the film on the one hand, and dissipated through heat radiation on the other hand, resulting in macroscopically, TEC cannot effectively control the temperature of FPA, making the temperature of the entire film uneven; from a microscopic point of view, the pixel structure that absorbs infrared radiation energy and heats up cannot transmit energy in time, and part of the energy is transmitted to other surrounding deformed pixels through the frame. On the pixel, other pixels are also deformed, resulting in thermal crosstalk, and the structure of each pixel cannot work independently

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