Infrared detector and preparation method thereof

Abstract

The invention relates to an infrared detector and a preparation method thereof. The infrared detector comprises a substrate, a dielectric layer, an electrode layer and a thermosensitive layer, wherein the dielectric layer, the electrode layer and the thermosensitive layer are located on the substrate, the electrode layer is located between the dielectric layer and the thermosensitive layer, the dielectric layer is located on the side, which is close to the substrate, of the electrode layer, and the electrode layer is in contact with the thermosensitive layer; the infrared detector comprises a plurality of infrared detector pixels arranged in a matrix, each infrared detector pixel comprises an absorption plate structure, at least two micro-bridge columns and at least two beam structures, and the absorption plate structures are connected to the corresponding micro-bridge columns through the corresponding beam structures; the thermosensitive layer covers the area where the absorption plate structure and the beam structure are located; the material for forming the thermosensitive layer comprises one or more of amorphous silicon, amorphous carbon, amorphous germanium or amorphous silicon germanium; and the material for forming the electrode layer at least includes titanium. According to the technical scheme, the thermal response time of the infrared detector is shortened, and the infrared response rate of the infrared detector is improved.

Description

technical field [0001] The present disclosure relates to the technical field of infrared detection, in particular to an infrared detector and a preparation method thereof. Background technique [0002] Non-contact infrared detectors include, for example, non-contact temperature measurement sensors. The detection principle is that the infrared detector converts the infrared radiation signal emitted by the target object to be measured into a heat signal, and converts the heat signal into an electrical signal through the detector sensitive element, and then The electrical signal is processed and output by the circuit chip, and the infrared detector thus realizes the infrared detection function. [0003] The infrared detector includes an absorbing plate structure and a beam structure. The performance of the absorbing plate structure and the beam structure directly affects the thermal response performance and detection performance of the infrared detector. Generally, a separate p...

AI Technical Summary

Problems solved by technology

[0003] The infrared detector includes an absorbing plate structure and a beam structure. The performance of the absorbing plate structure and the beam structure directly affects the thermal response performance and detection performance of the infrared detector. Generally, a separate passivation layer needs to be made for the absorbing plate structure of the infrared detector. In order to protect the electrode layer in the absorption plate structure from being oxidized or overlooked, but the setting of the passivation film layer will lead to an increase in the thickness of the infrared detector absorption plate structure, which in turn will increase the thermal response time of the infrared detector and affect the infrared detector. Infrared Detection Performance

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