37results about How to "Reduce thermal crosstalk" patented technology

The invention discloses a silicon-based hybrid integration laser radar chip system. According to a light path sequence, the transmitting terminal of the system comprises a tunable narrow linewidth laser source, a silicon nitride beam splitter, a silicon-based phase shifter array and a silicon nitride one-way transmitting antenna array in sequence. According to a principle that the light path is reversible, the receiving terminal of the system comprises a silicon nitride one-way receiving antenna array, a silicon nitride beam splitter and a silicon-based coherence receiving module in sequence and also comprises a backup system and an electric domain control processing module. Each module on a silicon platform and a silicon nitride platform realizes multilayer single-chip integration with the help of a silicon / silicon nitride evanescent wave coupler, and a gain chip in a tunable laser source module and silicon nitride waveguide are subjected to hybrid integration through horizontal coupling. By use of the system, through multi-platform multi-field hybrid integration, the high-speed flexible wave beam formation, rotation and directivity receiving of a free space laser signal can be realized in a phased array way. The system does not contain movable devices, and has high integration density, good CMOS (Complementary Metal-Oxide-Semiconductor Transistor) compatibility, low large-scale volume production cost and extremely high practical value.

Techniques for utilizing microstructures to enhance photon absorption in semiconductors are described. Microstructures such as pillars and / or holes effectively increase the effective absorption length, resulting in greater photon absorption. The use of absorption-enhanced microstructures for silicon photodiodes and silicon avalanche photodiodes can achieve bandwidths exceeding 10 Gb / s at photons at a wavelength of 850 nm with quantum efficiencies of about 90% or higher.

The invention provides a silicon-based gas sensitive chip of integrated humiture sensor and a manufacturing method of the silicon-based gas sensitive chip, relating to environment monitoring technology and aiming to solve the problem that a silicon-based chip doesn't have an integrated gas-sensitive unit. A plurality of gas-sensitive units, a temperature sensitive unit, and a humidity sensitive unit are integrated on one N-type monocrystalline silicon wafer, a secondary heat insulation through hole having a rectangular cross section is arranged between every two adjacent units, and in each gas-sensitive unit, a primary heat insulation through hole having a trapezoidal cross section is arranged between every two adjacent electrode lead wires. The four corners of each of the rectangular cross section and the trapezoidal cross section are arranged in an arc transition manner. The chip can monitor the humiture indexes of environment and can monitor various gases, and the two-stage heat insulation can meet the different work temperature requirement of different units. The heat insulation holes are subjected to arc transition instead of sharp angle, so that the array chip has the advantages of multifunctional measurement, good selectivity, high mechanical strength, high reliability, and low power consumption, and is suitable for environment monitoring.

The invention discloses a semiconductor laser and a laser chip. According to the temperature distribution on the resonant cavity of the laser chip, the semiconductor laser adjusts the width of the transitional heat sink so that On the other hand, the temperature is uniformly distributed; and the laser chip adjusts the width of each ridge waveguide structure and the distance between each ridge waveguide structure according to the temperature distribution of the positions of the multiple ridge waveguide structures, so as to reduce the gap between the ridge waveguide structures. Influenced by the thermal crosstalk phenomenon among them, the temperature between each ridge waveguide structure is kept similar, thereby improving the stability of the semiconductor laser and the laser chip, and prolonging the service life of the semiconductor laser and the laser chip.

The invention discloses a three-dimensional integrated programmable optical filter, which comprises a substrate layer, an opaque layer and a flip-chip bonding layer. The flip-chip bonding layer and the substrate layer are independent chips, and the first The first-stage filter, the second-stage filter is made on the flip-chip bonding layer, the first-stage filter and the second-stage filter are both single-stage tunable optical filters, and the single-stage tunable optical filter consists of multiple The microrings are cascaded, vertical coupling is adopted between two adjacent stages of microrings, and a layer of opaque material is arranged between adjacent two stages of microrings. The invention utilizes the three-dimensional integration technology to greatly reduce the occupied area of ​​the chip; utilizes the vertical coupling method to improve the transmission efficiency of light, and effectively reduces the transmission loss of the high-order micro-ring filter; the two-stage filters are respectively manufactured on independent chips , can pass the screening test to get the best performance products, and can minimize the thermal crosstalk of thermo-optic effect.

The invention discloses an asymmetric annular micro-electrode phase-change memory unit and a device, comprising a lower electrode layer, a first insulating layer, a phase-change functional layer, a second insulating layer, and an upper electrode layer from bottom to top; the first insulating layer There is a small hole in the layer, and the metal annular side wall and the insulating core are in the small hole; the phase change function layer is in contact with the lower electrode through the metal annular side wall in the small hole of the first insulating layer; the second insulating layer is also opened with a small hole; the upper electrode is in contact with the phase change functional layer through the small hole in the second insulating layer. Its core structure is characterized in that the lower electrode is a ring-shaped electrode, and the electrode core is filled with insulating material; the centerline of the first insulating layer, the centerline of the phase change functional layer, and the centerline of the second insulating layer are not on the same straight line. The asymmetric annular microelectrode phase-change memory unit and device provided by the present invention greatly reduce the contact area between the lower electrode and the phase-change material, reduce the operating current, have good thermal performance, and can maintain the original performance of the device. At the same time reduce power consumption and reduce thermal crosstalk.

The invention provides a multi-quantum-well semiconductor laser and a preparation method of the multi-quantum-well semiconductor laser, in order to improve the heat radiation efficiency of the multi-quantum-well semiconductor laser to realize high-power and high-reliability laser output. The multi-quantum-well semiconductor laser comprises a plurality of quantum-well layers and barrier layers arranged among the quantum-well layers. The multi-quantum-well semiconductor laser is characterized in that each quantum-well layer is provided with one or more light-emitting areas, and the light-emitting areas of the adjacent quantum-well layers are mutually staggered. According to the invention, with the adoption of the mode that the light-emitting areas of the quantum-well layers are mutually staggered, the heat cross stalk of an active area is lowered, the heat resistance of the system is reduced, and high-power output of laser can be realized.

The invention discloses an uncooled infrared focal plane detector photoelectric sensitive unit, and aims at providing an uncooled infrared focal plane detector photoelectric sensitive unit which is high in measurement resolution and high in sensitivity. The uncooled infrared focal plane detector photoelectric sensitive unit comprises a resonant cavity which is formed by a semitransparent metal layer, an organic dielectric layer and a reflecting metal layer through superposition, and a detector unit which is fixedly arranged below the resonant cavity and used for realizing photoelectric signal conversion. At least one of the semitransparent metal layer, the organic dielectric layer and the reflecting metal layer of the resonant cavity is provided with pierced lines and / or patterns. The corresponding layers of the resonant cavity are pierced so that thermal crosstalk of the resonant cavity can be effectively reduced and spatial resolution of the detector unit can be enhanced.

The invention provides a phase change storage unit which comprises a substrate, a lower electrode metal layer, a first insulating layer, a heating material layer, a second insulating layer, a lower phase change material layer, an upper phase change material layer and an upper electrode metal layer. The phase change storage unit further comprises a blocking layer, the blocking layer is arranged between the lower phase change material layer and the upper phase material layer, and the blocking layer is made of Nb2O5. According to the phase change storage unit, the blocking layer is arranged between the two layers of the phase change materials. The property and the thickness of materials of the blocking layer are controlled to reduce operation current and especially reduce an operation current in polycrystal-orientation amorphous conversion. Thus, 1D1R high-density integration is achieved, and power consumption of a device is reduced. In addition, the invention further provides a preparing method of the phase change storage unit.

The present invention discloses an intelligent power module and a method for manufacturing the same. The intelligent power module comprises circuit wirings, power elements and non-power elements which are arranged at the predetermined positions of the circuit wirings, and a paper radiator as a carrier. One side of the radiator is used as the right side to be covered with an insulating layer, the circuit wirings are arranged on the insulating layer to be far away from the side of the radiator, and the other side of the radiator is used as a backside. Folds used for radiating heat are arranged at the positions corresponding to the power elements, and partitions are arranged on the backside of the radiator. According to the present invention, the heat radiation effect, the electric performance and the heat stability of the intelligent power module are improved, and the cost is reduced.

The invention discloses a liquid jetting flow channel, which belongs to the technical field of MEMS technology. It includes a base layer, a cavity wall layer and an orifice layer. An ink inlet channel is arranged in the middle of the base layer, and a pressure cavity is arranged in the cavity wall layer. The jet hole layer is provided with jet holes, the base layer is provided with a cavity wall layer and a jet hole layer in turn, the pressure chamber is communicated with the ink inlet channel and the jet hole respectively, and the cross section of the ink inlet channel is curved, which includes A base rectangular portion, a base extension portion a and a base extension portion b, a plurality of base extension portions a are respectively provided on both sides of the base rectangular portion in the width direction, and a base extension portion b is respectively provided at both ends of the base rectangular portion in the length direction; The invention has better printing quality, higher printing precision, timely ink supply, can completely fill the flow channel, and improve the inkjet quality.