Microstructure enhanced absorption photosensitive devices

Abstract

Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and / or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb / s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.

Description

[0001] References to related applications [0002] This patent application claims priority to each of the following applications, and each of the following applications is incorporated herein by reference: [0003] U.S. Provisional Application No. 61 / 826,446, filed May 22, 2013; [0004] U.S. Provisional Application No. 61 / 834,873, filed June 13, 2013; [0005] U.S. Provisional Application No. 61 / 843,021, filed July 4, 2013; and [0006] U.S. Provisional Application No. 61 / 905,109, filed November 15, 2013; [0007] The provisional patent applications referenced above are collectively referred to herein as the "commonly assigned, incorporated applications." technical field [0008] The present invention generally relates primarily to photosensitive devices. More specifically, some embodiments relate to photosensitive devices having microstructure-enhanced absorption properties. Background technique [0009] Fiber optic communications are widely used in applications such ...

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However, both InGaAs devices and Ge devices are relatively expensive and have relatively high multiplication noise compared to silicon

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