Non-refrigeration infrared imaging focal plane array detector

Abstract

An embodiment of the invention provides a non-refrigeration infrared imaging focal plane array detector comprising a transparent substrate, a substrate heat transfer structure with a high thermal-conductance coefficient and a micro-cantilever unit, wherein the micro-cantilever unit is laid on the transparent substrate through the substrate heat transfer structure in a nested manner. The micro-cantilever unit comprises a thermal deformation structure, a reflector board composite structure and a supporting structure. A double-material structure is adopted for the reflector board composite structure, wherein one side, which faces the transparent substrate, of the reflector board composite structure is made of a metal material; and one layer, which faces a target object, of the reflector board composite structure is made of a material with a high infrared absorption coefficient. When the target object is detected through the detector, infrared light from the target object directly irradiates to an infrared absorption layer of the detector, thereby improving measuring sensitivity. Additionally, because of the transparent substrate adopted in the detector, emptying of the substrate below the micro-cantilever unit is not required, and thus the technique complexity is reduced.

Description

technical field [0001] The invention relates to the technical field of infrared imaging detectors, in particular to an uncooled infrared imaging focal plane array detector. Background technique [0002] All objects with a temperature higher than absolute zero can produce infrared radiation, and the intensity and energy distribution of the radiation are related to the temperature of the object, and carry the characteristic information of the object. By detecting the infrared radiation of objects, it can convert the invisible infrared picture into a visible image. [0003] Common infrared detection devices can generally be divided into two types: quantum infrared radiation detectors and thermal infrared radiation detectors. Among them, the quantum infrared detector directly converts the photon energy of infrared radiation into electronic energy, while the thermal infrared detector captures infrared information by detecting the temperature change of the detector caused by the ...

AI Technical Summary

Problems solved by technology

The former needs to keep the silicon substrate, so when the infrared rays pass through the silicon substrate, 40% of the infrared light will be lost due to reflection, which will reduce the sensitivity of the detector; although the latter has no silicon substrate reflection, the utilization rate of infrared radiation is very high. High, and then this kind of structure requires a long-term back cavity etching process and reliable stress control technology to make a full hollow structure array on the credential film, which has high requirements for the manufacturing process. At the same time, the utilization rate of this pattern is low, and it is difficult to further reduce Pixel area and increased resolution

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