47results about How to "Reduce the likelihood of forming" patented technology

The invention relates to a method for measuring the material level of a storage tank in the production of trichlorosilane, which belongs to the production field of halogenated silicane. The invention solves the technical problem of providing the method for measuring the material level of the storage tank in the production of the trichlorosilane, and the method is free from the interference of floating dust. The method for measuring the material level of the storage tank in the production of the trichlorosilane measures the material level of the storage tank which is connected with a pipeline, and calculates the material level L of a material in the storage tank according to a formula L=m/(Sp) by measuring the total mass m of the storage tank and the material in the storage tank, wherein S is the cross-section area of the storage tank, and p is the stacking density of the material. The method can avoid the influence of the floating dust on a detection result, can measure the material level of the material in the storage tank more accurately, is beneficial to replenishing silicon powder or eliminating silicon dust in time, can effectively reduce the generation of production accidents and has extensive application prospect.

The invention provides a manufacturing method of a semiconductor structure with device isolation areas. The method includes the steps of providing a semiconductor substrate; forming first groves in the semiconductor substrate, filling the first grooves with first insulating layers, and making the first insulating layers exposed out of the upper surface of the semiconductor substrate; making an epitaxial layer grow on the upper surface of the semiconductor substrate, wherein the epitaxial layer covers the whole upper surface of the semiconductor substrate; etching the epitaxial layer to form second grooves which make the first insulating layers exposed, wherein the width of the second grooves is smaller than the width of the first grooves; filling the second grooves with second insulating layers, and forming the device isolation areas through the first insulating layers and the second insulating layers. The invention further provides the corresponding semiconductor structure. By means of the manufacturing method and the semiconductor structure, the stability of the work of semiconductor devices can be improved, and the work performance of the semiconductor devices can be improved as well.

The invention discloses a grey cast iron inoculant. The formula of the grey cast iron inoculant comprises the following components in percentage by weight: 66-70% of Si, 1-3% of Zr, 1-2% of Ca, 0-2.5% of Mn, 0.5-1.5% of Fe3O4 and the balance of Fe and inevitable trace elements. By adopting the grey cast iron inoculant disclosed by the invention, the comprehensive performance of the grey cast iron can be improved, and the inoculating efficiency is improved.

The invention, belonging to photoelectric material technology field, relates the new-type polyarylradicalacetylene luminescent material containing polyploidy sesquialter silicon hydride and preparing method. The invention uses fluorenes, thiophene, benzene, dehydrobenzene, carbazole and many kinds of polyploidy sesquialter silicon hydride as raw materials, and uses organic reaction to synthesize the polyarylradicalacetylene luminescent material containing polyploidy sesquialter silicon hydride which is organic/inorganic hybridization nano material. Due to the existence of polyploidy sesquialter silicon hydride, it is effective to stop the formation of aggregation, so the organic polymer material possesses the good organic polymer and spectroscopic stability. The organic/inorganic hybridization luminescent material possesses the high quantum efficiency and luminescent heat endurance. The material can be used to prepare organic light-emitting diode and other electron devices.

The invention discloses a high formability and low-chromium ferrite stainless steel and a making method thereof, the high formability and low-chromium ferrite stainless steel comprises the following chemical components by weight: less than or equal to 0.015% of C, 0.010-0.35% of Si, 0.015-0.25% of Mn, 9.5-11% of Cr, 0.15-0.20% of Ti, less than or equal to 0.025% of P, less than or equal to 0.002% of S, less than or equal to 0.010% of N, less than or equal to 0.025% of (C + N), 0.0010-0.0050% of Ca, less than or equal to 0.05% of Al, greater than or equal to 6 (C + N) of Ti, and balance of Fe and inevitable impurities, wherein the impurity element Ni content is less than or equal to 0.3%, Cu content is less than or equal to 0.3%, O content is less than or equal to 0.0050%, and the content of Ni+0.5Cu is less than or equal to 0.35%, and the total amount of other impurity elements is less than 0.05% of. The formability is improved by reduction of hardness and strength by reduction of the Cr, Si and Mn content and control of solid solution amount of the Cr, Si and Mn in the steel to reduce the solid solution strengthening effect; by strict control of the content of Ni and Cu, the possibility of the martensite phase formation is reduced to reduce the hardness and strength of the stainless steel to improve the formability. By control of mixed use ratio of molten iron and scrap steel, the content of the impurity elements Ni and Cu in the steel, the influence of the impurity elements Ni and Cu on the hardness and strength and other properties can be ultimately controlled.