209results about How to "Reduce current" patented technology

A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The method and system include providing a first pinned layer, a barrier layer, a free layer, a conductive nonmagnetic spacer layer, and a second pinned layer. Each pinned layer has a pinned layer easy axis. At least a portion of the pinned layer easy axis is in a perpendicular direction. The barrier layer resides between the first pinned layer and the free layer. The spacer layer is between the free layer and the second pinned layer. The free layer has a free layer easy axis, at least a portion of which is in the perpendicular direction. The magnetic element is also configured to allow the free layer to be switched due to spin transfer effect when a write current is passed through the magnetic element. Because of the perpendicular magnetization(s), the writing current for spin transfer may be significantly reduced.

In a system that receives power from an electric power grid, a variable frequency AC drive has an output connected to an AC electric motor, and an input connected to the power grid. The motor is in 1 connection with a load, and the AC drive includes an active converter having a predetermined maximum apparent power capacity. The converter is coupled to a controller programmed to regulate reactive power generation and consumption of the variable frequency AC drive so that the drive produces reactive power when the converter is utilizing less than its maximum apparent power capacity. This reactive power is fed to the power grid. A device monitors current and voltage in the power grid and calculates power factor, which is then used as a feedback to an external controller that generates a reactive power reference signal intended to control the system's power factor. The controller is programmed to respond to the signal, controlling power generation and consumption so that the combination of reactive power and real power does not result in apparent power exceeding the maximum capacity of the active converter and avoids generating reactive power that would result in a leading power factor for the system.

The present invention relates to a non-volatile memory cell for storage of a data item in an integrated circuit, comprising a resistive memory element which may have different conductance states depending on the stored data item, a memory unit for passing the stored data item to an integrated circuit, a read unit which can be activated in order to pass a data item on for storage in the memory unit as a function of the conductance state of the memory element, a control unit in order to activate the read unit so that the data item to be passed on is stored in the memory unit, and in order to deactivate the read unit after storage of the data item in the memory unit, such that the memory element is isolated from the memory unit.

The invention discloses an overcurrent protection circuit for a low dropout linear voltage regulator. The overcurrent protection circuit for the low dropout linear voltage regulator comprises a current sampling circuit, a current comparison circuit and an upward pull circuit, wherein the current sampling circuit samples gate-drain voltage of a power tube of the low dropout linear voltage regulator, and outputs a sampling current to the current comparison circuit, the current comparison circuit mirrors the sampling current through a current mirror, and then compares the sampling current with a current of a current source, and after output current value of the low dropout linear voltage regulator exceeds current protection threshold value, control voltage output by the current comparison circuit powers on the upward pull circuit, and the upward pull circuit pulls up gate end voltage of the power tube of the low dropout linear voltage regulator, and thereby limits increasing of the output current, and plays a part in overcurrent protection. The overcurrent protection circuit for the low dropout linear voltage regulator can effectively restrain channel length modulation effects of a current sampling tube in the current sampling circuit, decreases occurrence rate of the problem that deviation between value of the current sampled by the current sampling circuit and ideal value is overlarge, improves current sampling accuracy of the overcurrent protection circuit, and obtains accurate starting threshold value of the overcurrent protection circuit.

A processor controlled charging platform/arrangement, and process using responsive charging of a battery as a function of internal resistance and environmental conditions of the battery are provided. Both voltage and temperature measurements can be used to determine the particular chemical state of a battery. Voltage data can be obtained by taking measurements across the battery terminals during the charge, and such data can be used to determine when charging is complete. Temperature data may also be obtained using thermal sensors placed on the surface or terminals of the battery, or utilizing sensors integrated into the battery. The charging platform/arrangement and process use a high current charge while the internal resistance of the battery is low, thus producing moderate heat, then self-adjusting to a lower intensity charge as internal resistance increases, so as to minimize the heat produced. As a result, the battery temperature can be kept at the battery's temperature limit, while maximizing the charging current.

The invention discloses an electromagnetic forming device and method of a metal pipe. The device comprises a background magnetic field unit and a metal pipe forming driving coil, wherein the background magnetic field unit is used for generating a pulse background magnetic field on the metal pipe, and a pulse driving magnetic field can generate vortexes on the metal pipe; and the metal pipe forming driving coil is used for generating the pulse driving magnetic field on the metal pipe. Due to the fact that the pulse width of the pulse driving magnetic field is much smaller than that of the pulse background magnetic field, the vortexes generated by the pulse background magnetic field on the metal pipe can be ignored, meanwhile, the influences of the pulse driving magnetic field on a magnetic field on the metal pipe can be ignored, and thus, electromagnetic force is generated on the metal pipe through interaction of the pulse background magnetic field and the vortexes. By independently adjusting the pulse background magnetic field and the pulse driving magnetic field, the electromagnetic force can be improved, the metal pipe high in mechanical strength and low in conductivity can be formed, meanwhile, the design difficulty of the forming driving coil can be lowered, and the service life of the forming driving coil is prolonged.

An electronic fuse may receive a silicon/germanium material in the fuse body, which in turn may result in the formation of a metal silicide material of reduced thickness. Consequently, the current density and, thus, the electromigration and heat generation in the metal silicide material may be increased for a given amount of current. Consequently, transistor switches for applying the programming pulse to the electronic fuse may be reduced in size.