60results about How to "Reduce capacitive effect" patented technology

A method and a system are provided for controlling a controller without physically touching the controller. A hand or other object interacts with a field surrounding the controller, altering the field. A change in characteristic of the altered field causes a corresponding movement of the controller that, in turn, corresponds to an amount of change in a parameter of a target device being controlled by the controller. The parameter of the target device is controlled by the controller while a user has no physical contact with the controller.

The invention relates to a method for generating an optical output, said method comprising the steps of: providing first and second electrical signals; providing a bipolar light emitting transistor device comprising a collector region, a base region and an emitter region; providing a collector electrode coupled to the collector region and an emitter electrode coupled to the emitter region, and potential coupled with respect to the collector electrode and the emitter electrode; providing an optical coupling in optical communication with the base region ; providing first and second base electrodes coupled to the base region; and coupling the first and second electrical signals to the first and second base electrodes, respectively, to generate The region emits and couples into the optical coupling an optical output that is a function of the first and second electrical signals. The present invention also discloses an improved pnp transistor laser and a technique for switching back and forth between a stimulated emission mode and a spontaneous emission mode for generating output laser pulses.

The invention discloses a mesa PIN passivation structure. The mesa PIN passivation structure is provided with P-type, I-type and N-type semiconductor layers which form a step layer mesa, wherein the I-type semiconductor layer is an InGaAs absorption layer; and a Fe-doped semi-insulating InGaAs layer grows on a side wall of the InGaAs absorption layer. The invention further discloses a high-speed mesa InGaAs photodiode and a preparation method thereof. The problem of electric leakage of an existing mesa PIN side surface passivation structure can be solved, and the chip performance is improved;and moreover, the process is simple, and the rate of finished products is high.

The invention provides a schottky diode controlled by a junction barrier having a superposed P<+>-P structure. The schottky diode comprises an N<+> type substrate zone (100), an N type drift region (101), P<+> portions of the superposed P<+>-P structure (102), an anodic electrode (104), a cathodic electrode (105), a silicon dioxide layer (106), a schottky contact (107), and an ohmic contact (108). Besides, the schottky diode also includes P portions of the superposed P<+>-P structure (103), wherein the P<+> window portions of the superposed P<+>-P structure (102) is on the P window portions of the superposed P<+>-P structure (103). According to the invention, before the P<+> portions of the superposed P<+>-P structure in an area are formed, the P portions of the superposed P<+>-P structure in an area are formed, wherein the P portions are separated from each other and the structure of P portions is similar to the netted structure of a junction barrier schottky (JBS). Therefore, reverse withstand voltage of the JBS diode device can be improved and the output capacitance can be reduced, on the condition that the forward conduction characteristic of the device is not sacrificed. The process of the invention has the strong feasibility of implementation, and the application requirement of the power electronic system can be satisfied easily according to the invention.

The invention provides an inverted metal detection probe. The inverted metal detection probe is characterized in that the probe is a gantry-shaped detection frame; a lower channel of the gantry-shapeddetection frame acts as a detection channel; a detection module comprising a protective shell, a main control module, a drive circuit, a transmitting coil, an even number of receiving coils and a receiving circuit is disposed in the gantry-shaped detection frame; all of the receiving coils are of the same specifications, positioned above the detection channel and in parallel with the detection channel; the transmitting coil is located above the receiving coils and in parallel therewith; each receiving coil is symmetrically arranged above the detection channel with the center point of the position of the transmitting coil as the symmetrical point. The inverted metal detection probe has the advantage that with the structure of a built-in coil of the probe improved, the probe can be easily compatible with conveyor equipment at an installation site.

The invention relates to a repair wire system applied to a liquid crystal display panel and a method thereof, wherein the liquid crystal display panel comprises a data driver, the data driver comprises a plurality of data channels, and the data channels are provided with a plurality of corresponding data lines. The repair method of the liquid crystal display panel has the following steps: at least one data channel and the corresponding data line are used as at least one repair wire for data transmission; when at least one broken signal wire is required to be repaired, the data of the broken signal wire is transmitted to the at least one data channel and the corresponding data line of the data driver.

The embodiment of the invention discloses a positron emission computer tomography detector device. The device comprises a silicon semiconductor detection array, wherein the silicon semiconductor detection array comprises a plurality of silicon semiconductor detection units; the cathodes of the plurality of silicon semiconductor detection units are connected with a power supply; the anodes or the cathodes of the plurality of silicon semiconductor detection units are taken as first signal output ends which are connected with corresponding time detection circuits; the number of the time detectioncircuits is more than 1 and is smaller than or equal to the number of the first signal output ends, by reducing the number of the silicon semiconductor detection units connected to the same time detection circuit, the capacitance effect of the silicon semiconductor detection units for collecting pulse signals is weakened, thus the attenuation degree of the high-frequency part in the pulse signalsis reduced, and the detection accuracy for gamma photon receiving time is improved.

The invention discloses an electric connector comprising an elongated insulating body and a plurality of conductive terminals fixed to the insulating body, wherein the insulating body is provided witha continuous receiving groove along a longitudinal direction thereof; the insulating body comprises a base portion, and first and second side walls which extend from the base portion and are locatedon the two opposite sides of the receiving groove; the conductive terminals are fixed to the first and second side walls and each includes a fixing portion fixed to the base portion and an arc-shapedbent contact portion extending into the receiving groove; and the width-to-thickness ratio of the contact portion of each conductive terminal is between 0.8 and 1.28. The impedance matching of the electric connector is improved, the differential signal transmission loss is reduced, and the high-frequency performance of the electric connector is improved.

A card connector includes a transmission conductor assembly. The transmission conductor assembly includes a first conductor group and a second conductor group. The first conductor group includes a backup transmission conductor, first and second signal transmission conductors, an inspection signal transmission conductor, first to seventh grounding transmission conductors, a command reset transmission conductor, first to sixth differential transmission conductors, first and second power transmission conductors, and a write-protection transmission conductor, each of which has two ends respectively forming a spring section and a soldering section. The second conductor group includes eighth to tenth grounding transmission conductors, seventh to tenth differential transmission conductors, and a third power transmission conductor each of which has two ends respectively forming a spring section and a soldering section. The soldering sections, being so arranged, achieve advantages of bettering high frequency performance, reducing capacitive effect, and suppressing electromagnetic radiation interference.

The invention discloses an InGaN / GaN LED nanosecond pulse driving circuit. Through a current pulse peak technology, a loop composed of Schottky diodes SBD1 and SBD2 and a capacitor C produces a current peak, and the rise time of light pulse is shortened by a few nanoseconds. Thus, the rise time of light pulse is shortened. A first inductor L1 is connected between the cathode of an LED and a bias power supply Vcc. In the phase of current pulse fall, an undershoot current is produced through a reverse current loop provided by the inductor. Thus, the fall time of light pulse is reduced, the LED goes out more quickly, and the fall time of light pulse is improved greatly. A high-speed field effect transistor switching circuit quickly charges the parasitic output capacitor of a main switch by increasing auxiliary switches, so that the closing time of the main switch is shortened, and the switching rate of field effect transistors is increased. The anode of the LED is connected with a DC bias voltage Vcc, so that an equivalent capacitor can be fully charged before the arrival of current pulse. Therefore, the switch-on delay of the LED is shortened effectively, and the transient response time of the LED is improved greatly.

The invention discloses an InGaN / GaN LED nanosecond pulse driving circuit. Using the current pulse peak value technology, the loop formed by Schottky diodes SBD1 and SBD2 and a capacitor C will generate a current peak value, thereby shortening the rise time of the light pulse by several times. nanoseconds, which shortens the rise time of the light pulse; the first inductor L1 is connected between the LED cathode and the bias power supply Vcc, and when the current pulse is falling, the reverse current loop provided by the inductor is used to generate an undershoot current. In this way, the falling time of the light pulse can be reduced to speed up the extinguishing of the LED and greatly improve the falling time of the light pulse; the switching circuit of the high-speed field effect tube mainly shortens the time of the main switch by adding an auxiliary switch to quickly charge the parasitic output capacitance of the main switch. The off time of the switch is used to increase the switching rate of the field effect tube; the anode of the LED is connected to the DC bias voltage Vcc, so that the equivalent capacitor can be fully charged before the current pulse arrives, thereby effectively shortening the LED conduction The delay can greatly improve the transient response time of the LED.

The invention relates to an electrolysis method and device for a self-cleaning carbon electrode, and belongs to the technical field of electrochemistry electrolysis. A periodic swerving electrolysis device is adopted and comprises an electrolytic cell, a periodic swerving controller and a direct-current power supply system, wherein the positive electrode and the negative electrode of the electrolytic cell are carbon electrodes, and the periodic swerving controller can be used for realizing the circular operations of electrifying, switching off, carrying out swerving electrification and switching off. The electrolysis method comprises the following steps of: 1) introducing materials into the electrolytic cell, wherein the electric conductivity of electrolysis material is more than 0.1S / m; 2) regulating the periodic swerving controller; and 3) electrifying to carry out electrolytic oxidation and reduction reaction. According to the method and the device disclosed by the invention, the carbon electrode can be cleaned by self in the electrolytic oxidation and reduction process, concentration polarization is lowered, the electrolysis efficiency is improved, the electrolysis energy consumption is lowered, and industrial implementation is easily carried out.

The invention provides an electrothermal film assembly and a manufacturing method thereof. The electrothermal film assembly comprises a first insulating layer, a conductive heat-generating material layer arranged on the upper surface of the first insulating layer, a second insulating layer at least covering the upper surface of the conductive heat-generating material layer, a thermal-radiation reflecting layer arranged at the lower surface of the first insulating layer, a thermal-radiation extracting layer arranged at the upper surface of the second insulating layer, and a thermal-radiation enhancing layer arranged at the upper surface of the thermal-radiation extracting layer. The electrothermal film assembly has the high thermal-radiation efficiency and thermal extraction efficiency; andthe loss of electric energy is reduced effectively. According to the electrothermal film assembly, the outer side of the electrothermal film assembly is packaged plastically by the insulating layers,so that the electrothermal film assembly has the stable electric heating function, the good insulating performance and high safety. Meanwhile, since the thermal-radiation reflecting layer and the thermal-radiation extracting layer in the electrothermal film assembly can be connected with the ground wire of the power source, the capacitance effect formed by the electrothermal film assembly and theoutside can be eliminated and thus the good safe and electric leakage prevention effects are realized.

The invention relates to a method and a device for electrolysis of a self-cleaning composite graphite electrode, and belongs to the technical field of electrochemical electrolysis. The device is a periodic turning electrolyzer comprising an electrolysis bath, a periodic turning controller and a direct current supply system, wherein the positive electrode and the negative electrode are made of insoluble metal; a graphite or glass carbon complex pole is arranged in the middle; and the periodic turning controller realizes the circulating operations of power turn-on, power turn-off, turning power turn-on and power turn-off. The electrolysis method comprises the following steps: (1) materials are fed into the electrolysis bath, wherein the electric conductivity for the electrolyzed materials is larger than 0.1 S / m; (2) the periodic turning controller is adjusted; and (3) power is turned on to carry out electrolytic oxidation reduction reaction. The method and the device can realize self-cleaning of the electrode in the electrolytic oxidation reduction process, improve the electrolysis efficiency and reduce the electrolysis energy consumption and are easy for industrial implementation.

The present invention relates to a lasing device for use in an optical module. The lasing device comprises a first reflector and a second reflector; a confinement layer adapted to confine current within a current-confining aperture; and an active layer between the first and second reflectors. The active layer comprises a main active region aligned with the current confining aperture and an auxiliary active region surrounding the main active region. The second reflector includes a first reflector region arranged on the current-confining aperture and a second reflector region surrounding the first reflector region. The second reflector region and the first reflector are configured to induce stimulated recombination in the auxiliary active region.

The invention discloses a storage unit and a manufacture method. The storage member comprises a substrate, a plurality of lamination structures, a plurality of conducting columns, a plurality of charge storage layers and a plurality of third conductor layers; the lamination layer structures are arranged on the base; the lamination layer structures are arranged along a first direction and extended along a second direction, wherein each lamination structure comprises a plurality of conducting layers and a plurality of dielectric layers which are alternatively laminated along a third direction; each conducting column is arranged on the base between the two adjacent lamination structures; each charge storage layer is positioned between the lamination layer structure and the conducting column; each third conducting layer is extended along the first direction, is intersected with the lamination structures in multiple intersection areas and covers part of the lamination structures and the tops of the conducting columns; and each intersection area of the lamination structure and the third conducting layer has an air gap and the air gap is extended along a third direction.

The present invention relates to a lasing device for use in an optical module. The lasing device comprises a first reflector and a second reflector; a confinement layer adapted to confine current within a current-confining aperture; and an active layer between the first and second reflectors. The active layer comprises a main active region aligned with the current confining aperture and an auxiliary active region surrounding the main active region. The second reflector includes a first reflector region arranged on the current-confining aperture and a second reflector region surrounding the first reflector region. The second reflector region and the first reflector are configured to induce stimulated recombination in the auxiliary active region.

The invention relates to a flat-panel display of a double-sided sunken inner cathode grid-controlled structure and the making process thereof, comprising: sealed vacuum cavity composed of anode glass panel, cathode glass panel, and peripheral glass frame; anode conducting layer on the anode glass panel and fluorescent powder layer prepared on the anode conducting layer; supporting wall structure and degassing agent auxiliary component between the anode glass panel and cathode glass panel; and grid lead layer, carbon nanotube and double-sided sunken inner cathode grid-controlled cathode structure on the cathode glass panel; and it can reduce operating voltage of grid and improve display brightness and has advantages of stable and reliable making course, simple making process, low making cost, and simple structure.

The invention provides a fan-out type packaging structure and a fan-out type packaging method, and relates to the technical field of semiconductors. The structure comprises a packaging element, a plastic packaging body, a first dielectric layer and a second dielectric layer, the packaging element is provided with a first bonding pad and a second bonding pad, the first bonding pad is lower than the second bonding pad, the plastic packaging body packages the packaging element in a plastic mode, the end face of the first bonding pad is exposed out of the surface of the plastic packaging body, and the end face of the second bonding pad is exposed out of the surface of the plastic packaging body. A first wiring layer is arranged on one side, far away from the packaging element, of the first bonding pad, and a first welding ball is arranged on the first wiring layer; the first dielectric layer is arranged on the side, away from the packaging element, of the first wiring layer, the end face of the second bonding pad is exposed out of the surface of the first dielectric layer, a second wiring layer is arranged on the side, away from the packaging element, of the second bonding pad, and second welding balls are arranged on the second wiring layer; a second dielectric layer is arranged on the side, away from the first wiring layer, of the second wiring layer. The structure can reduce the number of wiring layers and does not need to additionally increase conductive columns.

A high-speed transmission line includes a first shielded layer, a first insulating layer, a conductor layer, a second insulating layer and a second shielded layer sequentially attached to each other. The conductor layer includes plural first conductors and plural first conductors interspersed with each other, and the first conductor has a round cross section and is made of a round copper wire capable of increasing the signal transmission speed and extending the scope of application of the transmission line of a flexible cable.

The invention relates to a contact terminal of connector. It provides electrical connection of abutting joint terminal along the long axis direction. It has a narrow contact surface that is preset width and take splicing along the abutting joint terminal. The contact surface has a sliding contact area and a terminal contact section. And the presetting width of the sliding contact area is less that that of the contact surface. So, when the abutting joint terminal arrives at the terminal contact location, the capacity effect would be declined and the transmission quality would improve.

A card connector includes a transmission conductor assembly. The transmission conductor assembly includes a first signal transmission conductor, a first power transmission conductor, an inspection signal transmission conductor, a second signal transmission conductor, a command reset transmission conductor, a first grounding transmission conductor, a second power transmission conductor, a first differential transmission conductor, a second differential transmission conductor, a third signal transmission conductor, a second grounding transmission conductor, a third grounding transmission conductor, a third differential transmission conductor, a fourth differential transmission conductor, a fourth grounding transmission conductor, a fifth grounding transmission conductor, a fifth differential transmission conductor, a sixth differential transmission conductor, and an outside grounding transmission conductor, each of which has a spring section and a soldering section. The soldering sections, being so arranged, achieve advantages of bettering high frequency performance, reducing capacitive effect, and suppressing electromagnetic radiation interference.

The invention relates to a method and a device for electrolytic oxidation reduction for a self-cleaning composite graphite electrode and belongs to the technical field of electrochemical electrolysis. The device is a periodic turning electrolyzer comprising an electrolysis bath, a periodic turning controller and a direct current supply system, wherein the positive electrode and the negative electrode are made of insoluble metal; a graphite complex pole is arranged in the middle; and the periodic turning controller realizes the circulating operations of power turn-on, power turn-off, turning power turn-on and power turn-off. The electrolysis method comprises the following steps: (1) materials are fed into the electrolysis bath, wherein the electric conductivity for the electrolyzed materials is larger than 0.1 S / m, and the pH value is adjusted to be 6 to 12; (2) the periodic turning controller is adjusted; and (3) power is turned on to carry out electrolytic oxidation reduction reaction, wherein the electric current density is 5 to 80 A / m<2>. The method and the device can realize self-cleaning of the electrode in the electrolytic oxidation reduction process, improve the electrolysis efficiency and reduce the electrolysis energy consumption and are easy for industrial implementation.

The invention relates to a liquid phase isoelectric focusing electrophoresis system which is characterized in that a conductive layer and an insulation layer are sequentially arranged on a bottom plate of a separating cavity of an original separating device so as to artificially form a stress capacitor, so that the capacitance effect in the separating cavity is reduced, and the anti-coupling capability of the system is improved; a plurality of cross beams which are parallel at uniform intervals are arranged above the separating cavity of the system and are fixed on a top plate of the separating cavity, a pressure rod with a pressure head is arranged on each end of each cross beam, and therefore, when each pressure rod bears a downward tensile force, pressures borne by all parts of the top plate of the separating cavity can be balanced; and a control unit is additionally arranged in an original power supply device, the voltage value, the current value and the power state output by a voltage pre-stabilizing unit in the power supply device are adaptively regulated, and the voltage, the current and the power of the power supply device are controlled to be constantly output through error feedback, and therefore, the stability of power supply output is further improved and the pH gradient of a buffer solution in the electrophoresis system is stable.

The invention discloses a connector structure and a manufacturing method thereof. The manufacturing method includes the following steps. Substrate is provided. At least one dielectric layer is pressed onto the surface of the substrate. A through hole is formed, and the through hole penetrates the substrate and the dielectric layer. At least one terminal is pressed onto the dielectric layer, and the terminal is pressed onto a side of the dielectric layer adjacent to the through hole. A conductive layer is formed on the surface of the terminal that is not in contact with the dielectric layer and in the through hole to electrically connect the terminal and the through hole and form a conductive through hole. A connector structure manufactured by the above manufacturing method is also disclosed.

The invention discloses a low-capacitance vertical cavity surface emitting laser, which comprises a substrate, an epitaxial layer, a first electrode, a second electrode and an organic polymer layer, wherein the epitaxial layer forms a light-emitting area of ​​a device through insulation isolation, and the second electrode includes The ring part and the lead-out part, the ring part is arranged on the light-emitting area of ​​the device and the light outlet of the laser is formed inside, the lead-out part extends from the ring-shaped part to outside the light-emitting area of ​​the device, and the epitaxial layer outside the light-emitting area of ​​the device below the lead-out part is provided with A plurality of air columns extending downward, the organic polymer layer is arranged between the lead-out part and the epitaxial layer. The invention also discloses a manufacturing method of the above-mentioned laser. The present invention reduces the equivalent dielectric constant of the material under the second electrode by making a number of hole-like structures in the epitaxial layer under the second electrode and forming an air column, reduces the overall thickness and surface thickness difference, and improves the solderability of the chip. significantly improved.

The invention discloses a circuit layout structure, which includes an inter-metal dielectric layer surrounding metal interconnects and a metal pattern located in a cutting lane. The scribe lines are adjacent to the IMD layer and the metal interconnects, and the metal interconnects or metal patterns are appropriately isolated to reduce capacitive effects.

The present invention relates to the field of polyimide, in particular to a preparation method of polyimide resin, comprising the following steps: S1, after dissolving the first batch of polydiamine in a solvent under an inert gas atmosphere, heat the polyimide at 30°C and In the following low temperature environment, add 105‑110% of the first batch of polyvalent diamine molar total polyvalent dianhydride to polymerize first to form a resin solution, and control the viscosity of the resin solution at 50000‑70000cps; Gradually raise the temperature inside, add the second batch of polydiamines in batches, first more and then less gradually, until the viscosity of the resin solution is 180000-200000cps; S3, add fluorine-containing end-capping agent and mix evenly, and obtain polyimide after high-vacuum defoaming Resin solution, the polyimide coating formed has strong thermal stability, and the thermal expansion coefficient is close to that of the base film.