An ingan/gan LED nanosecond pulse drive circuit

Abstract

The invention discloses an InGaN / GaN LED nanosecond pulse driving circuit. Using the current pulse peak value technology, the loop formed by Schottky diodes SBD1 and SBD2 and a capacitor C will generate a current peak value, thereby shortening the rise time of the light pulse by several times. nanoseconds, which shortens the rise time of the light pulse; the first inductor L1 is connected between the LED cathode and the bias power supply Vcc, and when the current pulse is falling, the reverse current loop provided by the inductor is used to generate an undershoot current. In this way, the falling time of the light pulse can be reduced to speed up the extinguishing of the LED and greatly improve the falling time of the light pulse; the switching circuit of the high-speed field effect tube mainly shortens the time of the main switch by adding an auxiliary switch to quickly charge the parasitic output capacitance of the main switch. The off time of the switch is used to increase the switching rate of the field effect tube; the anode of the LED is connected to the DC bias voltage Vcc, so that the equivalent capacitor can be fully charged before the current pulse arrives, thereby effectively shortening the LED conduction The delay can greatly improve the transient response time of the LED.

Description

【Technical field】 [0001] The invention relates to an LED driving circuit, in particular to an InGaN / GaN LED nanosecond pulse driving circuit. 【Background technique】 [0002] In recent years, with the continuous research on the preparation technology, growth process and device packaging technology of group III elements and nitrogen compound semiconductor materials, optoelectronic semiconductor devices have developed rapidly, especially the heterojunction and multiple quantum wells composed of InGaN / GaN Breakthroughs have been made in the research of structured light-emitting materials, and high-brightness blue and green light-emitting diodes (Lighting-emitting Diode, LED), short-wavelength lasers, and avalanche photodiode detectors have been successfully prepared. Based on the special base material and quantum well structure of InGaN / GaN, on the one hand, it passivates the surface of the LED, reduces the loss caused by the recombination of carriers injected into the active re...

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Problems solved by technology

[0016] The above methods all involve the use of current pulses to drive LEDs, but they do not use a better method to effectively improve the response rate of LEDs and effectively shorten the rise time and fall time of optical pulse signals.

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