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288results about How to "Shorten rise time" patented technology

Standalone thermal energy recycling device for engine after-treatment systems

A standalone thermal energy recycling device in which exhaust air emitted from an internal combustion engine exchanges heat with that being heated during regeneration of after-treatment devices. By using the thermal energy recycling device, heat generated for regeneration is used to compensate energy loss during heat exchange rather than provide the overall energy needed for boosting exhaust flow temperature to target. Inside the thermal energy recycling device, heat exchanger is bypassed during normal engine operations for decreasing back pressure.
Owner:YAN MI

Self repair device and method thereof

A self repair device may include: an electrical fuse array configured to store bit information of a failed address in a fuse; an electrical fuse controller configured to store a row address or column address corresponding to a failed bit when a failure occurs, generate a repair address by comparing a failed address inputted during a test to the address stored therein, output a rupture enable signal for controlling a rupture operation of the electrical fuse array, and output row fuse set data or column fuse set data in response to the failed address; and a row / column redundancy unit configured to perform a row redundancy or column redundancy operation in response to the row fuse set data or the column fuse set data applied from the electrical fuse array.
Owner:SK HYNIX INC

Method of driving organic light emitting diode

InactiveUS20050259054A1Improve boot speedAppropriate driving voltage can be reached instantlyStatic indicating devicesConstant current sourceVoltage reference
A method of driving an organic light emitting diode using an applied voltage to increase the voltage of the anode is provided. The voltage of the anode is detected and compared to a reference voltage. When the voltage of the anode is lower than the reference voltage, a voltage source is applied to precharge the anode of the organic light emitting diode. When the voltage of the anode reaches the reference voltage, the precharge process is stopped. Alternatively, the reference voltage can be dynamically obtained using a sample / hold circuit to dynamically perform sampling on the output voltage of a constant current source.
Owner:RITDISPLAY

Semiconductor device

Provided is a semiconductor device exemplified by an inverter circuit and a shift register circuit, which is characterized by a reduced number of transistors. The semiconductor device includes a first transistor, a second transistor, and a capacitor.One of a source and a drain of the first transistor is electrically connected to a first wiring, and the other thereof is electrically connected to a second wiring. One of a source and a drain of the second transistor is electrically connected to the first wiring, a gate of the second transistor is electrically connected to a gate of the first transistor, and the other of the source and the drain of the second transistor is electrically connected to one electrode of the capacitor, while the other electrode of the capacitor is electrically connected to a third wiring. The first and second transistors have the same conductivity type.
Owner:SEMICON ENERGY LAB CO LTD

Array substrate line drive unit and circuit, and liquid crystal display panel

The embodiment of the invention discloses an array substrate line drive unit and circuit, and a liquid crystal display panel. An output end of a pull-up control module of an array substrate line driveunit, a control end of a pull-up module, a first end of a pull-down maintenance module, a first end of a pull-up module, a control end of a signal download module and a first end of a bootstrap module are connected with a gate signal point, a second end of the pull-down maintenance module, a second end of the pull-down module, a second end of the bootstrap module and an output end of the pull-upmodule are connected with a horizontal scanning line, a third end of the pull-down maintenance module and a third end of the pull-down module are connected with a first level signal line, a fourth endof the pull-down maintenance module and a fourth end of the pull-down module are connected with a second level signal line, an input end of the pull-up module and an input end of the pull-down moduleare connected with a clock signal line; and the voltage of the first level signal line is smaller than the voltage of the second level signal line. The array substrate line drive unit and circuit, and a liquid crystal display panel can shorten the fall time of the gate signals and can improve the charge efficiency.
Owner:SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD

Weld schedule for resistance spot welding of aluminum alloy workpieces

ActiveUS20130048613A1Decrease welder throughputHigh currentResistance welding apparatusSizingAdhesive
Aluminum-base alloy workpieces have surfaces with films of aluminum oxide which inhibit good contact with weld faces of resistance spot weld electrodes and the faying surfaces of, for example, sheet workpieces stacked for welding. Sometimes, the surfaces of the sheets also are coated with an adhesive or a sealer which further complicates welding. But in accordance with this invention, weld faces of opposing, round, copper welding electrodes are pressed against opposite outside surfaces of the sheets at a spot weld site and weld current is applied to the electrodes in accordance with a three-stage weld schedule to better form each weld. The weld schedule comprises a Conditioning stage (stage 1), a weld nugget Shaping stage (stage 2), and a weld nugget Sizing stage (stage 3).
Owner:GM GLOBAL TECH OPERATIONS LLC

Low-pressure casting filling method and low-pressure casing filling equipment used by same

The invention relates to a low-pressure casting filling method comprising the steps of arranging a reducing sleeve arranged on an upper port of a riser tube (10), guiding magnesium alloy liquid from the riser tube (10) to a cast through the reducing sleeve; arranging a protective gas inlet on the reducing tube, and enabling the protective gas into the space above the magnesium alloy liquid in the riser tube (10) for protecting the magnesium alloy liquid in the riser tube (10) and reducing oxidation. The a low-pressure casting filling method uses a low-pressure casting filling device which includes the reducing sleeve composed of an upper part (1) of the reducing sleeve, a lower part of the reducing sleeve; wherein a magnesium alloy liquid sensor mounting hole (10) is arranged on a lower side wall of the lower part of the reducing sleeve; a plurality of subsize air suctions with enough section width are arranged on a joint face of the upper part (1) and the lower part (8) of the reducing sleeve, and the air suctions are slit structures with rectangular sections. The low-pressure casting filling method of the invention can obviously reduce the oxidation of the magnesium liquid in the riser tube and improve the quality of a magnesium alloy low-pressure casting member.
Owner:沈阳铸研科技有限公司

Source device for providing contents to sink device and communication method thereof

A source device that provides contents to a sink device and a communication method thereof are provided. The communication method of the source device includes: transmitting a communication signal including a High-bandwidth Digital Content Protection (HDCP) signal to the sink device; determining a communication status with the sink device using an HDCP communication result received from the sink device; and adjusting the communication signal according to the determined communication status. Therefore, the communication method can provide a user with optimized contents.
Owner:SAMSUNG ELECTRONICS CO LTD

Semiconductor memory device

InactiveUS6862251B2Raise the ratioData read time can be shortenedTransistorSolid-state devicesControl circuitComputer science
A semiconductor memory device includes a first nonvolatile memory cell, a bit line connected to the first nonvolatile memory cell, and a control circuit connected to the first nonvolatile memory cell and the bit line, and disposed and configured in such a manner as to reset the bit line to a predetermined first potential state only for a certain period “a” of time in response to transition of an input address signal. The first nonvolatile memory cell has a gate electrode formed on a semiconductor layer via a gate insulating film; a channel region disposed under the gate electrode; diffusion regions disposed on both sides of the channel region and having a conductive type opposite to that of the channel region; and memory functional units formed on both sides of the gate electrode and having the function of retaining charges.
Owner:SHARP KK
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