41results about How to "No longer be formed" patented technology

A method for fabricating a semiconductor device includes forming a hard mask pattern over a substrate, forming an isolation layer for defining an active region by using the hard mask pattern, forming a buried gate in and across the active region and the isolation layer over the substrate, forming an inter-layer dielectric layer over the substrate, forming a storage node contact hole that exposes the hard mask pattern by selectively etching the inter-layer dielectric layer, extending the storage node contact hole to expose the active region by removing the hard mask pattern exposed under the storage node contact hole, and forming a storage node contact plug that fills the extended storage node contact hole.

The variation of the parasitic inductance generated at the output terminal of a transistor in the final stage of a multistage amplifier unit is reduced. One side of the semiconductor chip that includes the final stage transistor is put in contact with the inner wall of a square recess formed in a wiring substrate. The semiconductor chip is positioned and fixed accurately at the bottom of the recess, whereby the drain wire of the transistor is fixed. Then, a chip edge at which the drain electrode is disposed on top of the chip is put in contact with the inner wall of the recess, which is closer to the drain bonding pad. A metallized layer is formed of the same size as that of the chip at the bottom of the recess and a fusion bonding material is supplied on the metallized layer.

A ceramic electronic component that includes a ceramic main body, a coating film and external electrodes on the surface of the ceramic main body. The coating film is selectively formed on the surface of the ceramic main body by applying, to the surface of the ceramic main body, a resin-containing solution that etches the surface of the ceramic main body so as to ionize constituent elements of the ceramic main body. The coating film includes a resin and the constituent elements of the ceramic main body, which were ionized and deposited from the ceramic main body.

A main magnetic pole of a recording head is formed in an inverted trapezoidal shape by ion milling but, the long milling time poses a problem of variations in the inverted trapezoidal shape and the dimensional variations in track width. In one embodiment of the invention, a recording head is formed by first forming a lower magnetic pole, a gap layer, and conductor coils, forming an upper magnetic yoke over the gap layer at a position recessed from the air bearing surface, and forming an inorganic insulative layer in the recessed portion. A back magnetic pole connected with the upper magnetic yoke is formed on the back of the lower electrode. Successively, the upper surfaces of the inorganic insulative layer and the upper magnetic yoke are planarized, on which an underlayer film such as of Rh is formed. A magnetic layer is formed by stacking a plurality of thin magnetic films by sputtering over the underlayer film from the air bearing surface as far as the position overlapping the upper magnetic yoke. Successively, ion milling is applied to form a main magnetic pole of an inverted trapezoidal shape having a taper on the lateral surface as viewed from the air bearing surface.

A steam generator has a pressure casing formed in the shape of a drum. The longitudinal axis of this pressure casing is oriented horizontally or largely horizontally. A hollow tube (1) is formed in such a way that at least two hollow tube sections (1′) are provided, preferably a plurality of hollow tube sections which extend predominantly parallel to each other, and which are arranged in stack-form vertically or vertically offset above each other, and which in each case are interconnected in pairs at an end section, wherein this hollow tube is located in the vertical direction above the feed section (8).

A process for producing spherical inorganic particles which have high flowability, can be incorporated in a high proportion, and are useful as a filler for composite substrates such as printed wiring boards and encapsulating materials. Also provided is a process for producing spherical inorganic particles which have high flowability and can be incorporated in a high proportion and which are useful as a filler for encapsulating materials and give an encapsulating material having high electrical insulating properties. One of the processes for producing spherical inorganic particles comprises: (a1) pulverizing a silicate-containing inorganic material to form a pulverization product; (b1) heating the pulverization product in an atomized state to form the pulverization product into spherical particles; (c1) spraying water over the spherical particles to cool them while maintaining the atomized state of the spherical particles; and (d1) collecting the spherical particles. The other process, which is for producing spherical glass particles, comprises: a pulverization step in which a silicate-containing vitreous material is pulverized to form a pulverization product; an acid treatment step in which the pulverization product is contacted with an acid; and a sphering step in which the pulverization product is heated in a suspended state and formed into spherical particles.

A ceramic electronic component that includes a ceramic element, and a coating film and external electrodes that are provided on the surface of the ceramic element. The coating film is selectively formed on the surface of the ceramic element by applying, to the ceramic electronic component, a resin-containing solution containing at least one anion of a sulfuric acid, a sulfonic acid, a carboxylic acid, a phosphoric acid, a phosphoric acid, and a hydrofluoric acid.

Method of forming a high-reliability contact plug which prevents a short circuit between the plug and a bit line by applying a material having an etching rate ratio of 100 or more with respect to a silicon nitride film which forms a self-aligned contact plug. After the formation of a bit line, whose top surface and side surfaces are covered with a silicon nitride film, a sacrificial interlayer film is formed which covers the whole surface of the bit line, and a contact hole is formed by etching the sacrificial interlayer film and then the lower-layer interlayer insulating film to form a capacitance contact plug. A column of a capacitance contact plug is then formed by removing the sacrificial interlayer film, a third interlayer insulating film is formed on the column, and part of this interlayer is removed to expose a surface of the contact plug.

Provided are a deposition substrate of a deposition apparatus, a method of forming a layer using the same, and a method of manufacturing an organic light emitting diode (OLED) display device. The method of forming a layer using the deposition substrate includes preparing a substrate, forming a heating conductive layer for Joule heating on the substrate, forming a first insulating layer on the heating conductive layer for Joule heating and including a groove or hole, forming a deposition material layer on a top surface of the first insulating layer having the groove or hole, and applying an electric field to the heating conductive layer for Joule heating to perform Joule-heating on the deposition material layer. Thus, the method is suitable for manufacturing a large-sized device.

A touch sensing substrate includes a substrate, a first light sensing element, a second light sensing element and a first bias line. The first light sensing element includes a first gate electrode, a first active pattern overlapping with the first gate electrode, a first source electrode partially overlapping with the first active pattern and a first drain electrode partially overlapping with the first active pattern. The second light sensing element includes a second gate electrode, a second active pattern overlapping with the second gate electrode, a second source electrode partially overlapping with the second active pattern and a second drain electrode partially overlapping with the second active pattern. The first bias line is connected to the first and second gate electrodes.

A steam generator has a pressure casing formed in the shape of a drum. The longitudinal axis of this pressure casing is oriented horizontally or largely horizontally. A hollow tube (1) is formed in such a way that at least two hollow tube sections (1′) are provided, preferably a plurality of hollow tube sections which extend predominantly parallel to each other, and which are arranged in stack-form vertically or vertically offset above each other, and which in each case are interconnected in pairs at an end section, wherein this hollow tube is located in the vertical direction above the feed section (8).