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32results about How to "Lower initial resistance" patented technology
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Separator for non-aqueous batteries, non-aqueous battery using same, and production method for separator for non-aqueous batteries
InactiveUS20120164514A1Lower initial resistanceIncrease productionMaterial nanotechnologyPretreated surfacesFiber layerNanofiber
Provided is a separator for non-aqueous batteries not only having shutdown property but also achieving both higher output and short-circuit resistance. The separator comprising a laminate comprising: a low melting-point polymer fiber layer (A) having a melting point of 100 to 200° C., the low melting-point polymer fiber layer (A) comprising nanofibers having a fiber diameter of 1000 nm or smaller and formed from the low melting-point polymer; and a heat-resistant polymer fiber layer (B) positioned on the low melting-point polymer fiber layer (A) and comprising a high melting-point polymer having a melting point over 200° C. or a heat infusible polymer, the heat-resistant polymer fiber layer (B) comprising a mixture of nanofibers having a fiber diameter of 1000 nm or smaller and non-nanofibers having a fiber diameter over 1000 nm and both formed from heat-resistant polymer.
Owner:KURARAY CO LTD
Separator for non-aqueous batteries, non-aqueous battery using same, and production method for separator for non-aqueous batteries
InactiveCN102498592ALower initial resistanceImprove output efficiencyNon-aqueous electrolyte accumulatorsCell seperators/membranes/diaphragms/spacersPolymer scienceElectrical battery
Owner:KURARAY CO LTD
Piezoelectric crystal gas sensor with two working modes
ActiveCN106153718ALower initial resistanceGuaranteed to workAnalysing fluids using sonic/ultrasonic/infrasonic wavesWeighing by absorbing componentElectrical resistance and conductanceFrequency measurements
The invention discloses a piezoelectric crystal gas sensor with two working modes. The piezoelectric crystal gas sensor comprises a quartz wafer and electrodes, wherein the electrodes include a first metal electrode, a second metal electrode and a third metal electrode, the first metal electrode and the second metal electrode are arranged on the front surface of the quartz wafer and form a staggered annular interdigital electrode structure, the third metal electrode is arranged on the rear surface of the quartz wafer, and the third metal electrode, the first metal electrode and the second metal electrode form an up-down unsymmetrical quartz crystal microbalance electrode structure. By utilizing a three-electrode structure, a mass sensitive piezoelectric resonant frequency measurement method and a resistance sensitive gas measurement manner can be combined; and the first metal electrode and the second metal electrode form the staggered annular interdigital electrode structure, so that the normal working of a piezoelectric resonant body is guaranteed, the initial resistance value of a gas sensitive material in an impedance test is decreased, and the signal to noise ratio in the impedance test is increased.
Owner:GENERAL ENG RES INST CHINA ACAD OF ENG PHYSICS
Conductive particles, adhesive composition, circuit connection material and connection structure, as well as connection method of circuit member
InactiveCN101484950ALower initial resistanceImprove insulation performancePrinted circuit assemblingNon-insulated conductorsCoverage ratioCore Particle
A conductive particle comprising: a core particle having an electrical conductivity; and a insulating coating provided on the surface of the core particle and comprising an organic polymeric compound, wherein the conductive particle has a coverage ratio as defined by the formula (1) of 20 to 40%.
Owner:RESONAC CORPORATION
Shear strain type pressure sensor
ActiveCN104034452AShear strain sensitiveIncreased force rangeForce measurementElastomerMagnetic current
A shear strain type pressure sensor comprises a shell. A magnetic field generating device in the shell comprises two magnetic poles which are opposite in magnetism and correspond to each other oppositely. A shear plate is arranged in the gap between the two magnetic poles, a rubber sheet is fixed on one side of the shear plate and in full contact with the end face of the first magnetic pole in the two magnetic poles, and a first electrode is fixed on the other side of the shear plate and fixedly provided with a magnetorheological elastomer. A second electrode is fixed on the other side of the magnetorheological elastomer, the second electrode is fixedly connected with the end face of the second magnetic pole in the two magnetic poles, the first electrode and the second electrode are electrically connected with a signal conditioning module, one end of the shear plate upwards extends to penetrate through an S-shaped force measuring piece and then extends out of the upper end face of the shell, a supporting plate used for supporting the S-shaped force measuring piece is fixed in the shell, a stop piece is arranged on the shear plate, and the lower end face of the stop piece is in contact with the upper end face of the S-shaped force measuring piece. The shear strain type pressure sensor is high in resolution, high in sensitivity, and large in force testing range.
Owner:CHONGQING MATERIALS RES INST
High-stability PTC thermosensitive assembly capable of improving maintenance current
InactiveCN106448970ANo false protection will occurImprove stabilityResistor terminals/electrodesPositive temperature coefficient thermistorsPower flowEngineering
The invention relates to a high-stability PTC thermosensitive assembly capable of improving maintenance current. An assembly structure with a positive temperature effect comprises a built-in core material, an insulating material frame coating the built-in core material, an insulating semi-cured resin material coating the insulating material frame and two surfaces of a PTC electrode foil, and an electrode foil covering the outmost surface end of the semi-cured resin material, wherein the built-in core material is formed by stacking multiple layers of PTC core materials in parallel; each layer of PTC core material comprises an upper electrode foil, a lower electrode foil and a material layer which is folded and clamped between the upper electrode foil and the lower electrode foil and has a resistance positive temperature coefficient effect; the electrode foil on the outmost surface end is connected with an electrode foil on the surface end of the built-in core material through a blind hole; and a conductive metal pin is connected to the electrode foil on the outmost surface end. According to the high-stability PTC thermosensitive assembly, the resistance of the PTC thermosensitive element is reduced by stacking the PTC core materials in parallel to improve the maintenance current; and air and moisture are isolated by using the insulating material frame and expansion of the PTC core materials is limited, so that the stability is improved.
Owner:SHANGHAI CHANGYUAN WAYON CIRCUIT PROTECTION CO LTD
Preparation method for memory cell of resistive random access memory and product thereof
ActiveCN105098065AIncrease concentrationLower initial resistanceElectrical apparatusMedia layerArgon
The invention discloses a preparation method for a memory cell of a resistive random access memory. The method includes: step 1, a conductive film as a first electrode is formed on the surface of a substrate; step 2, a ZnO film through argon plasma bombardment treatment as an intermediate layer is prepared on the surface of the first electrode obtained by the step 1; step 3, a conductive film as a second electrode is prepared on the surface of the intermediate layer obtained by the step 2; and step 4, an isolation device is prepared on the structural basis obtained by the step 3, and the memory cell of the resistive random access memory is obtained. According to the preparation method for the memory cell of the resistive random access memory, the argon plasma bombardment treatment of the ZnO film as the intermediate medium layer is performed so that the flatness of the surface of the ZnO film is greatly improved; and the ZnO film through argon plasma bombardment treatment serves as the memory prepared by the intermediate layer, the initial presentation is the low-resistance state, the wiping of all the devices does not need the process of electric forming, and the wiping voltage is low.
Owner:NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
Resistive random access memory and manufacturing method thereof
PendingCN112420923ALower initial resistanceImprove consistencyElectrical apparatusOxygen vacancySemiconductor
The invention provides a resistive random access memory and a manufacturing method thereof. The resistive random access memory comprises a semiconductor substrate, a first electrode, a first intercalation layer, a resistive random access layer, a second intercalation layer and a second electrode, the first electrode covers a part of the semiconductor substrate, the first intercalation layer coversthe first electrode, a resistance of the first intercalation layer is smaller than that of the resistive random access layer, the resistive random access layer covers the first intercalation layer, the second intercalation layer covers the resistive random access layer, oxygen atoms exist in the second intercalation layer and the resistive random access layer, and the second electrode covers thesecond intercalation layer. Due to the fact that oxygen atoms exist in the second intercalation layer and the resistive random access layer, after the resistive random access memory applies a positivevoltage, the oxygen atoms in the resistive random access layer and the second intercalation layer can move towards the second electrode, the concentration of oxygen vacancies can be increased, generation of oxygen vacancy conductive filaments is facilitated, and the consistency of the resistive random access memory is further improved.
Owner:SHANGHAI HUALI MICROELECTRONICS CORP
Conductive particles, conductive material and contact structure
ActiveCN111383793ALower initial resistanceLower resistanceConductive layers on insulating-supportsSemiconductor/solid-state device detailsConductive materialsElectrically conductive
The invention provides conductive particles, a conductive material, and a contact structure. In conductive particles that are included between electrodes and electrically connect the electrodes, the conductive particles include an insulator core, and a conductive layer or a raised conductive layer provided on the surface of the core. In a graph which is drawn using the deformation rate of the conductive particles as the x-axis and the elastic work ratio determined by formula 1 as the y-axis after the conductive particles are compressed at 25 DEG C by a micropressure tester, an oxide plating layer is damaged by electrode layer or conductive layer with protrusions within a range of the deformation rate of the conductive particles between an interval (a) in which a certain elastic power ratiois maintained after the first discontinuous point and an interval (b) in which a certain x elastic power ratio is maintained after the second discontinuous point. [Formula 1] nIT = Welastic / Wtotal *100, where n is an integer greater than or equal to 1.
Owner:DUK SAN NEOLUX
Flexible sensor and preparation method thereof
ActiveCN106197251AEasy to prepareSimple methodElectrical/magnetic solid deformation measurementHigh resistanceGraphite
The invention discloses a flexible sensor and a preparation method thereof. The flexible sensor is featured in that the protonic acid doping peak in the infrared Fourier spectra of a protonic-acid-doped polyaniline sheet is 1240cm<-1>, two ends of the protonic-acid-doped polyaniline sheet are provided with electrodes, and the protonic-acid-doped polyaniline sheet is coated with a flexible insulating material. The method comprises steps of firstly uniformly mixing aniline and protonic acid to obtain a transparent solution, placing an anode and a graphite cathode in the transparent mixed solution for electrodeposition to obtain protonic-acid-doped polyaniline coating on the anode, then dying the protonic-acid-doped polyaniline, arranging electrodes at two ends of the protonic-acid-doped polyaniline to obtain electrode-contained protonic-acid-doped polyaniline coating on the anode, separating the electrode-contained protonic-acid-doped polyaniline from the anode, coating the flexible insulating material on the surface of the protonic-acid-doped polyaniline provided with the electrodes at two ends, and dying the coated protonic-acid-doped polyaniline to obtain a target product. The flexible sensor has a high resistance change rate in stretching, can be widely used in working conditions of folding, distorting, stretching and the like, and is particularly suitable for the field of wearable equipment.
Owner:HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
A semiconductor resistive gas sensor and its preparation method
ActiveCN104713914BLower initial resistanceReduce the difficulty of detectionMaterial resistanceSemiconductor nanocrystalsNanocrystalline composites
The invention discloses a semiconductor resistance gas sensor and a preparation method thereof. The gas sensor includes an insulating substrate, a signal electrode and a gas-sensing layer; the gas-sensing layer is composed of semiconductor nanocrystalline composite material and graphene. The colloidal method is used to synthesize the semiconductor nanocrystal solution, which can directly form a film at room temperature without high temperature treatment, consumes less energy, and does not cause the agglomeration of nanoparticles, and can maximize the advantages of large specific surface area of nanoparticles. It is conducive to gas adsorption, improves the sensitivity of the sensor, and enables the sensor to detect low-concentration target gas at a lower working temperature or even at room temperature. The preparation method is simple, and it is easy to realize large-scale batch production.
Owner:HUAZHONG UNIV OF SCI & TECH
A high stability ptc thermal component
ActiveCN105869806BLower initial resistanceImprove cooling effectPositive temperature coefficient thermistorsResistor detailsElectrical resistance and conductanceElectrical battery
The invention relates to a low-resistance, high-stability PTC heat-sensitive element, which includes components with resistance positive temperature effect and conductive metal pins. Among them, the structure of the positive temperature effect component is a PTC core material composed of an upper electrode foil, a lower electrode foil, and a stack of material layers with a positive temperature coefficient of resistance effect sandwiched between the upper and lower electrode foils, and is wrapped around the core material. The insulating material frame, the insulating semi-cured resin material covering both surfaces of the insulating material frame and the PTC electrode foil, and the terminal electrode foil covering the outermost surface of the semi-cured resin material, and the outermost terminal electrode foil is connected to the PTC core through the blind hole The electrode foil on the surface of the material is connected; the conductive metal pin is connected to the electrode foil on the outermost surface. The high-stability PTC thermosensitive element of the present invention has low resistance characteristics and high stability, and can meet complex charging and discharging applications of batteries.
Owner:SHANGHAI CHANGYUAN WAYON CIRCUIT PROTECTION CO LTD
overcurrent protection device
ActiveCN111029066BLower initial resistanceSufficient peel strengthPositive temperature coefficient thermistorsPolymer sciencePolymer substrate
An overcurrent protection device includes a first electrode, a second electrode and a positive temperature coefficient multilayer structure including a first polymer layer, a second polymer layer and a third polymer layer. The first polymer layer is bonded to the first electrode and has a first polymer substrate made of a first polymer composition. The second polymer layer has perforations and has a second polymer substrate made of a second polymer composition. The third polymer layer is bonded to the second electrode and has a third polymer substrate made of a third polymer composition. The overcurrent protection device of the present invention has both low initial resistance and sufficient peeling strength.
Owner:FUZETEC TECHNOLOGY CO LTD
Preparation method of bipolar gating memristor and bipolar gating memristor
The invention provides a preparation method of a bipolar gating memristor and a bipolar gating memristor. The preparation method comprises the following steps of: preparing a lower electrode; depositing a resistive material layer on the lower electrode; and depositing an upper electrode on the resistive material layer, specifically, depositing the upper electrode by adopting a magnetron sputtering mode, controlling sputtering power to control metal particles of the upper electrode to have proper kinetic energy, and controlling the vacuum degree of an area where the upper electrode and the resistive material layer are located, so as to enable the upper electrode and the resistive material layer to spontaneously generate oxidation-reduction reaction in the deposition process of the upper electrode so as to form a built-in bipolar gating layer, and further depositing the upper electrode on the built-in bipolar gating layer, or selecting a material with the activity higher than that of metal elements of the resistive material layer as a metal material of the upper electrode, so as to make the upper electrode and the resistive material layer spontaneously generate oxidation-reduction reaction in the deposition process of the upper electrode, so as to form a built-in bipolar gating layer and further depositing the upper electrode on the built-in bipolar gating layer. According to the preparation method of the bipolar gating memristor and the bipolar gating memristor of the invention, the performance of the bipolar gating device is improved.
Owner:HUAZHONG UNIV OF SCI & TECH
A preparation method and product of a storage unit of a resistive random access memory
ActiveCN105098065BErase and write voltage is smallIncrease defect concentrationElectrical apparatusRandom access memoryThin membrane
The invention discloses a method for preparing a storage unit of a resistance random access memory. Step 1, forming a conductive film on the surface of a substrate as a first electrode; Step 2, preparing an argon plasma bombardment treatment on the surface of the first electrode obtained in step 1 The ZnO thin film is used as the intermediate layer; step 3, the conductive film is prepared on the surface of the intermediate layer obtained in step 2 as the second electrode; step 4, an isolated device is prepared on the basis of the structure obtained in step 3, and the resistive random access memory is obtained storage unit. The invention provides a method for preparing a storage unit of a resistive random access memory, which performs argon plasma bombardment treatment on a ZnO thin film as an intermediate medium layer, thereby greatly improving the flatness of the surface of the ZnO thin film; ZnO treated with the argon plasma bombardment The memory prepared by the thin film as the intermediate layer initially exhibits a low-resistance state, and the erasing and writing of all devices does not require an electrical formation process, and the erasing and writing voltage is relatively small.
Owner:NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
A piezoelectric crystal gas sensor with dual working modes
ActiveCN106153718BLower initial resistanceGuaranteed to workAnalysing fluids using sonic/ultrasonic/infrasonic wavesWeighing by absorbing componentSignal-to-noise ratio (imaging)Frequency measurements
The invention discloses a piezoelectric crystal gas sensor with two working modes. The piezoelectric crystal gas sensor comprises a quartz wafer and electrodes, wherein the electrodes include a first metal electrode, a second metal electrode and a third metal electrode, the first metal electrode and the second metal electrode are arranged on the front surface of the quartz wafer and form a staggered annular interdigital electrode structure, the third metal electrode is arranged on the rear surface of the quartz wafer, and the third metal electrode, the first metal electrode and the second metal electrode form an up-down unsymmetrical quartz crystal microbalance electrode structure. By utilizing a three-electrode structure, a mass sensitive piezoelectric resonant frequency measurement method and a resistance sensitive gas measurement manner can be combined; and the first metal electrode and the second metal electrode form the staggered annular interdigital electrode structure, so that the normal working of a piezoelectric resonant body is guaranteed, the initial resistance value of a gas sensitive material in an impedance test is decreased, and the signal to noise ratio in the impedance test is increased.
Owner:GENERAL ENG RES INST CHINA ACAD OF ENG PHYSICS
Method for producing positive electrode active material for secondary batteries
PendingCN113302160AHigh crystallinityImprove structural stabilityElectrode thermal treatmentPositive electrodesBattery cellMaterials science
The present invention pertains to a method for producing a positive electrode active material for secondary batteries, the method comprising: a step for preparing a positive electrode active material precursor containing at least 60 mol% of nickel (Ni) with respect to the entirety of the metal components; a step for mixing the positive electrode active material precursor and a lithium source material, and performing first pre-firing under an oxidizing atmosphere to form a pre-fired product; and a step for performing a second main-firing on the pre-fired product under an air atmosphere to form a lithium transition metal oxide.
Owner:LG CHEM LTD
Shear Strain Pressure Sensor
ActiveCN104034452BShear strain sensitiveIncreased force rangeForce measurementElastomerMagnetic current
A shear strain type pressure sensor, comprising a housing, the magnetic field generating device in the housing has two opposite magnetic poles and corresponding to each other, a shearing plate is arranged in the space between the two magnetic poles, and the shearing plate One side of the shear plate is fixed with a rubber sheet, which is in full contact with the magnetic end surface of the first magnetic pole of the two magnetic poles, and the other side of the shear plate is fixed with a first electrode, and the first electrode is fixed with a magnetorheological Elastic body, the other side of the magnetorheological elastic body is fixed with a second electrode, the second electrode is fixed to the magnetic pole surface of the second magnetic pole in the two magnetic poles, the first electrode, the second electrode and a signal conditioning module Electrically connected, one end of the shearing plate extends upwards through an S-shaped force-measuring member and then protrudes from the upper surface of the housing, and the housing is fixed with a support plate for supporting the S-shaped force-measuring member. A stopper is arranged on the plate, and the lower end surface of the stopper is in contact with the upper end surface of the S-shaped force-measuring piece. It has high resolution, high sensitivity and large force range.
Owner:CHONGQING MATERIALS RES INST
Preparation method of tin disulfide/graphene/tin dioxide ternary composite gas-sensing material for nitrogen dioxide gas sensor
ActiveCN108181355BLow detection limitHighly sensitive gas responseGrapheneMaterial resistanceSemiconductor materialsPhysical chemistry
The invention relates to a preparation method of a tin disulfide / graphene / tin dioxide ternary composite gas sensing material for a nitrogen dioxide gas-sensitive sensor, relates to a gas sensor material and a preparation method thereof, belongs to the technical field of gas detection, and aims to solve the problems of low sensitivity, high detection limit, poor selectivity and high working temperature of existing semiconductor materials for NO2 gas. The method is as follows: 1. preparation of SnS2 nanosheets; 2. compounding of graphene and SnO2 quantum wires; 3. preparation of a SnS2 / graphene / SnO2 composite sensing film, to be more specific, firstly coating a ceramic piece with a gold interdigitated electrode with an ethanol solution of graphene / SnO2 quantum wires, then coating the surfaceof the ethanol solution of the graphene / SnO2 quantum wires with an ethanol solution of SnS2 for reacting, and aging to obtain the material. The method further integrates application ideas of two two-dimensional materials in the field of NO2 gas sensors, and constructs the SnS2 / graphene / SnO2 ternary composite material to realize a high sensitivity and low detection limit gas sensitive response forthe NO2 gas at low temperature.
Owner:HARBIN INST OF TECH
Anti-co interference ethanol sensing material
The invention relates to an anti-CO interference ethanol sensing material, a preparation method and a gas sensitive sensing element using the sensing material. The ethanol sensing material is composed of 0.1%-0.5% La2O3 powder and 99.9%-99.5% % Sb-doped SnO2 nanometer powder is mixed, and the Sb / Sn molar ratio in the Sb-doped SnO2 nanometer powder is 0.05-0.1%. The preparation method comprises: preparing tin chloride ethanol solution and antimony-containing hydrochloric acid solution according to the above-mentioned Sb / Sn molar ratio, adding the antimony-containing hydrochloric acid solution dropwise into the tin chloride ethanol solution, stirring and mixing, adding a chelating agent, and then Add ammonia water dropwise until the pH value reaches 9.0, take the precipitated product, wash, dry, and sinter to obtain Sb-doped SnO2 nanopowder, and then grind and mix with La2O3 powder according to the above ratio to obtain the final product. The sensing material has a low initial resistance and a much higher response to ethanol than CO.
Owner:SHENZHEN GRADUATE SCHOOL TSINGHUA UNIV
A fast-response high-sensitivity polymer-based gas-sensing material and its preparation method and application
The invention belongs to the technical field of functional composite materials, and provides a fast-response highly-sensitive polymer-based gas-sensitive material and a preparation method thereof in order to solve the problem of long gas response time of a silicon rubber gas-sensitive material filled with conductive particles. The gas-sensitive material comprises, by mass, 2-35 parts of conductive nano-particles, 100 parts of silicone rubber and 0.05-7 part of montmorillonite. The preparation method comprises the steps of solution blending, and casting film molding. The material has detection and early warning functions to toxic and flammable solvent vapor, obviously shortens the gas response time, can reach a high gas sensitivity within a short time, and has a very good reusable stability.
Owner:HANGZHOU NORMAL UNIVERSITY
Non-aqueous electrolytic solution, and lithium secondary battery comprising same
PendingCN113875057AImprove high temperature storage performanceImprove overall lifespanOrganic chemistryNegative electrodesOrganic solventElectrical battery
Owner:LG ENERGY SOLUTION LTD
Flexible sensor and its preparation method
ActiveCN106197251BLower initial resistanceHigh resistance stretchElectrical/magnetic solid deformation measurementHigh resistanceGraphite
Owner:HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
Conductive particles, conductive materials, and contact structures
ActiveCN111383793BLower initial resistanceLower resistanceConductive layers on insulating-supportsSemiconductor/solid-state device detailsTester deviceConductive materials
Owner:DUK SAN NEOLUX
A Pull Sensitive Sensor with Positive Resistance Effect
ActiveCN106336670BHas a positive resistance effectLower initial resistanceForce measurementRubber materialCapacitance
Owner:SHENZHEN HUIRUI ELECTRONICS MATERIALS
Preparation method of molybdenum oxide nanofiber paper containing pd quantum dot modification
ActiveCN106517332BLower initial resistanceHigh sensitivityMaterial nanotechnologyMolybdenum oxides/hydroxidesHydrogen concentrationFlexible circuits
The invention discloses a preparation method of Pd quantum dot modified molybdenum oxide nanofiber paper, which is exclusively used for preparing a hydrogen-sensitive element in a high-performance hydrogen sensor with fast response ability at normal temperature and is an improvement based on Molybdenum Oxide Nanofiber Paper and Preparation Method thereof (CN104909407B). The preparation method is characterized by uniformly adding 0.013-0.034 weight parts of Pd quantum dots into the suspension D in a process of stirring a suspension D in the step (5); in a process of preparing a hydrogen-sensitive element of a hydrogen sensor by use of the nanofiber paper, in an environment with relatively low hydrogen concentration, initial resistance is lower, the response time and recovery time of the sensor are shorter while the sensitivity is high, and the performance is stable at normal temperature while recycling can be realized; and the integrated hydrogen-sensitive element also can be conveniently integrated in various flexible circuits. The preparation method disclosed by the invention has the advantages of simple technology, low energy consumption and pollution-free preparation process.
Owner:HUBEI UNIV
A kind of in-tube growth doped state or filled mesoporous polyaniline gas sensor and its preparation method
ActiveCN109115839BImprove performanceIncreased specific surface contact areaMaterial resistanceElectrical resistance and conductanceAniline
The invention discloses a sensor with doped-state mesoporous polyaniline gas growing in a tube or a filled mesoporous polyaniline gas sensor, and preparation methods thereof. According to the presentinvention, a tube having any sizes and made of any materials is used as a matrix, doped state polyaniline grows in the tube or the tube is filled with mesoporous polyaniline, and electrodes and electric-conduction lead-out ends are prepared to form the sensor; the preparation method comprises: modifying the inner wall of a tube, introducing an initiator and a doped-state aniline solution, controlling the film thickness according to the amounts and the concentrations of the doped-state aniline and the initiator, or directly filling the tube with mesoporous polyaniline, producing electrodes on both ends of the tube, and winding the outer wall electrode with a metal fine wire to connect a resistance detecting device; when the concentration of the to-be-detected gas is extremely low and the resistance change is not obvious after the contact with polyaniline, the plurality of the sensors can be connected in parallel to form the cluster sensor so as to substantially reduce the initial resistance and improve the sensitivity; and the sensor has advantages of high detection sensitivity to all concentration gases, extremely short response time, fast recovery, good stability, convenient use,convenient carrying high commercial prospect and the like.
Owner:EAST CHINA NORMAL UNIV
Conductive particle, method for producing same, conductive material, contact structure, electrical component, and electronic component
ActiveCN112309604ALower initial resistanceLower resistanceConductive layers on insulating-supportsNon-conductive material with dispersed conductive materialAnisotropic conductive filmElectrical resistance and conductance
Provided are: conductive particles which are suitable for maintaining electrical contact due to little increase in initial electrical contact resistance and resistance after 85 DEG C / 85% reliability evaluation; a method for producing the conductive particles; a conductive material; a contact structure; and electrical and electronic components. The conductive particles are used in anisotropic conductive materials such as anisotropic conductive films and anisotropic conductive pastes, and each conductive particle has an insulator core and a conductive layer on the surface of the core. The present invention is characterized in that: the conductive layer is provided with protrusions, and the protrusions and the conductive layer are an alloy comprising a first element constituting the base andat least one or more second elements or a plurality of second elements selected from the group consisting of P, B, Cu, Au, Ag, W, Mo, Pd, Co, and Pt; the second element or at least one of the plurality of second elements has a first concentration on the inner side of the conductive layer and a second concentration on the outer side of the gold plating side, and the second concentration is greaterthan the first concentration.
Owner:DUK SAN NEOLUX
Cathode active material for lithium secondary battery, preparation method therefor, and lithium secondary battery comprising same
PendingCN113169332ALower initial resistanceImprove discharge capacityElectrode thermal treatmentPositive electrodesBattery cellAnalytical chemistry
The present invention relates to a cathode active material for a lithium secondary battery, a preparation method therefor, and a lithium secondary battery comprising same. The cathode active material comprises secondary particles obtained by granulating at least one primary particle and shown by the chemical formula 1, and comprises metal oxide particles, which have a nano-sized average diameter (D50) and are located inside the secondary particles. The chemical formula 1 is Lia[NixCoyMnz]tM<1-t>O<2-p>Xp, and in the chemical formula 1, the definition of each substituent is the same as that in the detailed description.
Owner:浦项控股股份有限公司 +2
Cathode active material, method for preparing same, and lithium secondary battery comprising same
PendingCN114846649AIncrease capacityExcellent high temperature life characteristicsPositive electrodesLi-accumulatorsChemistryElectrical battery
The present embodiment relates to a positive electrode active material for a lithium secondary battery, a method for preparing the same, and a lithium secondary battery comprising the same. According to one embodiment, there may be provided a lithium secondary battery positive electrode active material comprising: lithium metal oxide particles; and a coating layer on at least a portion of a surface of the lithium metal oxide particles, the coating layer including B, LiOH, Li2CO3, and Li2SO4.
Owner:POHANG IRON & STEEL CO LTD +1
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