32results about How to "Increased jump chance" patented technology

The invention discloses three-atom-doped titanium dioxide catalyst as well as a preparation method and application of the three-atom-doped titanium dioxide catalyst, belonging to the technical field of catalysis and indoor air pollution prevention and control. The three-atom-doped titanium dioxide is composed of titanium dioxide crystals comprising nitrogen atoms, vanadium atoms and silicon atoms, having a crystalline form of anatase or a mixed crystalline of anatase and rutile, and having a particle size being 2-20nm, wherein the molar ratio of nitrogen to vanadium to silicon to titanium is (14-56): (0.1-2): (3-16):100, the specific surface area is 70-90m<2> / g, the energy gap is 2.8-3.0ev, and the absorption wavelength is 380-500nm. According to the invention, based on the nitrogen-vanadium-doped titanium dioxide photocatalyst, three-atom-doped titanium dioxide photocatalyst is prepared by using a sol-gel method, the superficial area and pore volume of the product are improved, and the product has catalytic activity under visible light. The preparation method is simple, the reaction process is easy to control, and side reactions hardly occur.

The invention provides a high-infrared radiation ceramic material and its preparation method and application. The high-infrared radiation ceramic material is synthesized by a base material and an auxiliary material through a high-temperature solid-phase reaction; the base material includes La 2 o 3 and CeO 2 ; The auxiliary material includes Mn 2 o 3 , SrO, SrCO 3 One or more of them; by mass percentage, in the high infrared radiation ceramic material, the La 2 o 3 45% to 50%, the CeO 2 45% to 50%, and the auxiliary material is 1% to 5%. The high infrared radiation ceramic material of the present invention has simple raw material composition, good uniformity, stable infrared radiation performance and an infrared radiation rate of ≥0.95.

The invention discloses a yellow phosphorescent Cu (I) complex luminescent material and a preparation method thereof. The phosphorescent Cu (I) complex is prepared from monovalent copper salt and a ligand by complexing, and has a molecular structure of Cu(2-OFPI)(POP)(PF6), wherein POP and 2-OFPI in the formula are electrically neutral ligands bis(2-phenylphosphinophenyl)ether and 1-(9H-fluoren-2-yl)-2-[(2-pyridin-2yl)-1H-imidazole-1-yl]ethanone. The complex has the advantages of high luminous efficiency and long luminous life, and also has the advantages of being easy to purify due to small molecules, high in stability and easy to dissolve. The material is prepared from Cu(CH3CN4)PF6 and a methylene chloride solution of the ligand by direct mixed reaction, and has the advantages that thestructure, the process and equipment are simple, raw materials are sufficient, the cost is low and the like. The material can be used as a photoluminescent yellow light material and can also be used as a luminescent layer phosphorescent material for electroluminescent devices prepared from multiple layers of organic materials.

The invention discloses a Plasmon-enhancement-based quantum well infrared detector and a preparation method thereof. The detector comprises a Si-GaAs substrate, an AlAs buffering layer, an AlAs:Si lower contact layer positioned on the buffering layer, a multi-quantum well layer, an AlAs:Si upper contact layer positioned on the multi-quantum well layer, a metal film, an upper electrode and an annular lower electrode, wherein the AlAs buffering layer is positioned on the substrate; the multi-quantum well layer is positioned on the AlAs:Si lower contact layer; the metal film and the upper electrode are positioned on the AlAs:Si upper contact layer; the metal film has a grating structure; the upper electrode is embedded in the metal grating structure; and the annular upper electrode is positioned on the lower contact layer and winds around the metal film, the upper contact layer and the multi-quantum well layer. In the detector, through the local area characteristic of Plasmon and the frequency-selecting characteristic of a raster, signals are enhanced and filtered, the absorption efficiency of a quantum well is improved, and the sensitivity of the quantum well infrared detector is increased.

The present invention relates to a semiconductor film internal cladding amplification optical fibre and its perform manufacture method. Said perform is formed from core rod, internal cladding and external cladding, the internal cladding is sandwiched between core rod and external cladding, the core rod is made up by using GeO2 doped quartz material, its refractive index is greater than that of pure quartz material of external cladding; the internal cladding is a film cladding and is made up by using active semiconductor direct band-gap material with amplification function, and the external cladding is made up by using pure quartz material. The manufacture method of perform includes the following steps: (a) adopting improved chemical gas-phase deposition process to make core rod; (b) making external cladding; (c) making film internal cladding; (d) adopting rod-inserting technique to make assembly and (e) reducing rod.

The invention discloses a preparation method of crystalline silicon containing up-conversion luminance quantum dots. The preparation method comprises the following steps: step 1. doping 8ppbw-120ppmw of rare-earth elements into solar polycrystalline silicon materials, utilizing an ordinary CZ method to prepare the monocrystalline silicon, or utilizing an ordinary ingot casting method to prepare the polycrystalline silicon, wherein the concentration of the atom quantity of the rare-earth elements in the monocrystalline silicon or the polycrystalline silicon is 1010-1016atoms / cm3; and step 2. carrying out annealing treatment on the monocrystalline silicon or the polycrystalline silicon prepared in the step 1 at 700-1000 DEG C, so as to obtain the monocrystalline silicon or the polycrystalline silicon containing the up-conversion luminance quantum dots. The invention also discloses the monocrystalline silicon prepared by the method, and the concentration of the rare-earth elements in the monocrystalline silicon or the polycrystalline silicon is 1010-1016atoms / cm3. With the adoption of the preparation method, the absorption of silicon materials to an infrared spectrum is increased, and the conversion efficiency is improved greatly.

The invention relates to a rare-earth oxyfiuoride nanometer material, and a preparation method and application thereof. According to the method, rare-earth trifluoroacetic acid salts and ammonium acetate are used as precursors; in addition, a high-temperature solvent thermolysis method is used, so that the oil-soluble rare-earth oxyfiuoride nanometer material is obtained. The synthesis conditions are easy to control; the repeatability is good; the prepared nanometer material is in a particle shape; the dispersibility, the uniformity and the repeatability of the particle are good. The prepared rare-earth oxyfiuoride nanometer material is an ideal substrate material capable of being applied to the field of biological detection and biological imaging.

The invention discloses a P-type silicon substrate heterojunction cell which comprises a P-type crystalline silicon substrate layer, an intrinsic non-crystalline silicon layer, an N-type non-crystalline silicon layer, a P-type non-crystalline silicon doping layer, a first transparent conducting layer, an upper electrode layer, an intrinsic non-crystalline silicon germanium passivation layer, a second transparent conducting layer and a back electrode layer, wherein the P-type crystalline silicon substrate layer is provided with a front and a back; the intrinsic non-crystalline silicon layer is deposited at the front of the P-type crystalline silicon substrate layer; the N-type non-crystalline silicon layer is deposited on the upper surface of the intrinsic non-crystalline silicon layer; the first transparent conducting layer is located on the upper surface of the N-type non-crystalline silicon layer; the intrinsic non-crystalline silicon germanium passivation layer is deposited at the back of the P-type crystalline silicon substrate layer; the P-type non-crystalline silicon doping layer is deposited on the lower surface of the intrinsic non-crystalline silicon germanium passivation layer; the second transparent conducting layer is located on the lower surface of the P-type non-crystalline silicon doping layer; and the back electrode layer is located on the lower surface of the second transparent conducting layer, and is electrically connected with the P-type non-crystalline silicon doping layer through the second transparent conducting layer. According to the P-type silicon substrate heterojunction cell, the transition probability of a hole at the back of a substrate can be increased; collection and utilization of carriers are increased; a short-circuit current is increased; and the conversion efficiency of the cell is improved.