134results about How to "Increased charge storage capacity" patented technology

A circuit for rendering an energy storage device parallelable comprised of an energy storage device connected to a power adapter that converts the potential of the energy storage device into a potential that follows a predetermined function of the state of charge of the energy storage device. When multiple assemblies are paralleled, they may be charged and discharged as a whole with individual storage devices maintaining equal states of charge. The energy storage devices can be batteries with different cell counts, configurations, and energy discharge profiles. In some cases, the power adapters are comprised of DC to DC converters and system controllers that are used to translate each battery's energy discharge profile into a user-determined energy discharge profile that is a predictable function of the battery's state of charge and independent of temperature or other external conditions.

A pinned photodiode, which is a double pinned photodiode having increased electron capacitance, and a method for forming the same are disclosed. The invention provides a pinned photodiode structure comprising a substrate base over which is a first layer of semiconductor material. There is a base layer of a first conductivity type, wherein the base layer of a first conductivity type is the substrate base or is a doped layer over the substrate base. At least one doped region of a second conductivity type is below the surface of said first layer, and extends to form a first junction with the base layer. A doped surface layer of a first conductivity type is over the at least one region of a second conductivity type and forms a second junction with said at least one region of a second conductivity type.

A charge trap flash memory device and method of making same are provided. The device includes: a tunnel insulating layer, a charge trap layer; a blocking insulating layer; and a gate electrode sequentially formed on a substrate. The charge trap layer includes: plural trap layers comprising a first material having a first band gap energy level; spaced apart nanodots, each nanodot being at least partially surrounded by at least one of the trap layers, wherein the nanodots comprise a second material having a second band gap energy level that is lower than the first band gap energy level; and an intermediate blocking layer comprising a third material having a third band gap energy level that is higher than the first band gap energy level, formed between at least two of the trap layers. This structure prevents loss of charges from the charge trap layer and improves charge storage capacity.

The invention discloses a melt-blow non-woven material capable of effectively filtering PM 2.5 particles, a preparation method and a production device. The melt-blow non-woven material comprises, by weight percentage, 93-97 parts of polypropylene, 3-6 parts of electret master batch and 0.1-1 part of polyvinylidene fluoride. According to the melt-blow non-woven material capable of effectively filtering PM 2.5 particles, the polypropylene, the electret master batch and the polyvinylidene fluoride are compounded, the obtained melt-blow non-woven material is characterized by high porosity, the fiber diameter of smaller than two micrometers, large clogging capacity, high filtering efficiency and low resistance, an electret is good in charge storage performance after electret processing, the charge keeping rate can be above two years, and the electret can be used in a high-temperature and high-humidity environment. The product is environmentally friendly and free of pollution, has the advantages of being long in service life and wide in use range, and is particularly suitable for removing PM 2.5 particles in the air.

A stratified photodiode for high resolution CMOS image sensors implemented with STI technology is provided. The photodiode includes a semi-conductive layer of a first conductivity type, multiple doping regions of a second conductivity type, multiple doping regions of the first conductivity type, and a pinning layer. The multiple doping regions of the second conductivity type are formed to different depths in the semi-conductive layer. The multiple doping regions of the first conductivity type are disposed between the multiple doping regions of the second conductivity type and form multiple junction capacitances without full depletion. In particular, the stratified doping arrangement allows the photodiode to have a small size, high charge storage capacity, low dark current, and low operation voltages.

A method and structure for simultaneously producing a dynamic random access memory device and associated transistor is disclosed. The method forms channel regions and capacitor openings in a substrate. Next, the invention deposits capacitor conductors in the capacitor openings. Then, the invention simultaneously forms a single insulator layer above the channel region and above the capacitor conductor. This single insulator layer comprises a capacitor node dielectric above the capacitor conductor and comprises a gate dielectric above the channel region.

The invention relates to a multilayer electret nanofiber filtering material and a preparation method thereof. The invention adopted the technical scheme is as follows: through an electric-field stepped increasing / reducing technology, utilizing a combined needle head for electrostatic spinning to realize deposition of spinning polymer solution on a receiving substrate to obtain nanofiber, carrying out slight dissolving treatment on the surface of a nanofiber layer by a certain release rate by adopting a recovery solvent steam, wherein the nanofiber layer is uniformly filled with electret materials and the diameter of the nanofiber layer is distributed in a stepped-increasing or stepped-reducing manner along the direction vertical to the breadth. According to the multilayer electret nano-fiber filtering material, the electret charge stability is extremely high, the surface electrostatic potential is 250-7000V, simultaneously the filtering performance is excellent, the filtering efficiency for 0.03-10 microns particulates is more than 99.997%, the resistance pressure drop is less than or equal to 39Pa, the service life is long, and the development and application prospect in the aspect of filtering materials for air purifiers, window gauzes, masks and filtering papers and the like are wide.

A SONOS flash memory device, including a semiconductor substrate; an ONO structure formed on the semiconductor substrate, the ONO structure including a bottom oxide layer, a dielectric charge storage layer and a top oxide layer, the bottom oxide layer having a super-stoichiometric oxygen content and an oxygen vacancy content of about 1010 / cm2 or less, wherein the bottom oxide layer exhibits a reduced charge leakage relative to a bottom oxide layer having a stoichiometric or sub-stoichiometric oxygen content and a greater number of oxygen vacancies. In one embodiment, the bottom oxide layer has an oxygen vacancy content of substantially zero.

The invention relates to preparation of polyaniline / polypyrrole composite nano fiber electrode materials with core-shell structure, comprising the following steps: (1) respectively dissolving aniline and an aniline monomer initiator into a polyaniline doping agent, then merging the mixed liquor, shaking the mixed liquor to ensure the mixed liquor to react under room temperature, centrifuging and washing the reactants to obtain fibers; and (2) adding the fibers to a polypyrrole doping agent, carrying out ultrasonic dispersion and adding a pyrrole monomer under ultrasonic action, then dropwise adding the polypyrrole doping agent solution of a pyrrole monomer initiator, keeping the system temperature at 0-5 DEG C to react, centrifuging and washing the products and drying the products, thus obtaining the electrode materials. The method is simple, low in cost and suitable for industrial production. The obtained materials show higher specific capacitance and good chemical performance stability when being used in super capacitors.

The invention is directed to designs for capacitors of implantable medical devices (IMDs) such as implantable defibrillators, implantable cardioverter-defibrillators, implantable pacemaker-cardioverter-defibrillators, and the like. The capacitor designs can reduce capacitor volume significantly and may also improve charge holding capacity relative to conventional capacitor designs. Moreover, since capacitors typically comprise a significant portion of the volume of an IMD, significant reductions in capacitor volume can likewise significantly reduce the size of the IMD.

The invention discloses an array substrate, a manufacturing method thereof, and a display device. The array substrate comprises a substrate body, a thin film transistor, a first public electrode, a pixel electrode and a second public electrode which are formed above the substrate body. The pixel electrode is located between the first public electrode and the second public electrode. The pixel electrode is electrically connected with the drain of the thin film transistor. The pixel electrode are insulated with the first public electrode and the second public electrode. The potential of the first public electrode is equal to the potential of the second public electrode. Due to the fact that a first capacitor is formed between the first public electrode and the pixel electrode, a second capacitor is formed between the second public electrode and the pixel electrode, and the first capacitor and the second capacitor are parallelly connected, the capacity of a storage capacitor in a pixel unit is equal to the capacity sum of the first capacitor and the second capacitor, and the capacity of the storage capacitor in the pixel unit is increased effectively.

Provided herein is a method of manufacturing a memory device. The method of manufacturing the memory device includes: forming a compensation layer over the channel layer, wherein an incubation time used for a nucleation of the compensation layer is shorter than an incubation time of the channel layer; and performing a heat treatment process for crystallizing the channel layer.

The invention discloses a preparation method of a carbon nanofiber supported orderly-arranged reduced graphene oxide (RGO) electrode material. The preparation method comprises the following steps: preparing graphene oxide from flake graphite by a Hummer method, performing surface modification on the graphene oxide by ionic liquid to obtain ionic liquid surface-modified graphene oxide, adding a polymer into a solvent, and stirred strongly under the action of ultrasonic waves to form an electrostatic spinning solution; and performing electrostatic spinning on the electrostatic spinning solution,and performing heat treatment on graphene oxide-polymer electrostatic spinning fibers obtained on an electrostatic spinning receiver to obtain a composite material in which RGO is arranged verticallyand orderly on the surfaces of the carbon nanofibers in an embedded manner. The preparation method has the advantages of reasonable process and stable performance, can prevent RGO agglomeration, increase the specific surface area and increase the charge storage density and charge transfer rate, is taken as an electrode of a high-capacity power supercapacitor, and can be up to 99.5 to 99.7 percentin charging and discharging efficiency.

The present invention relates to an electrets air filtering material. The present invention is made by the method as follows: (1) prepare a dual-layer composite fiber which consists of a pre-filtering layer and a main filtering layer, wherein the diameter of the fiber of the pre-filtering layer is distributed ranging three micrometer to ten micrometer, while the diameter of the fiber of the main filtering layer is distributed ranging one micrometer and five micrometer;(2) then electret the dual-layer composite fiber to form the product. The present invention has the advantages of extremely high electrets electric charge stability, prominent filtering efficiency, low pressure loss and long service life.

A flash memory device including a hybrid structure charge trap layer and a related method of manufacture are disclosed. The charge trap layer includes at least one hybrid trap layer including a first trap layer formed from a first material having a first band gap energy, and a plurality of nano dots separated from each other such that each nano dot is at least partially encircled by the first trap layer, the plurality of nano dots being formed from a second material having a second band gap energy lower than the first band gap energy.

The invention relates to a high-temperature valve regulated sealed lead-acid storage battery. The high-temperature valve regulated sealed lead-acid storage battery comprises a battery groove, a positive-electrode plate, a negative-electrode plate, a partition plate and an electrolyte. Each electrode plate comprises grids and an active material layer applied into a grid body of the grids. The active materials in the positive-electrode plate comprise lead powder, sulfuric acid, water, short fibers, graphite, Bi2O3, Sb2O3, SnSO4, polyaniline and 4Pb.PbSO4. The lead-acid storage battery is good in high-temperature performance, can be normally used even on using occasions without air conditioner facilities and is particularly suitable for being used under high-temperature environments.

A charger for a hand-held power tool includes a power source interface, a charger base and a charging cradle rotatably supported on the charger base. The rotatable charging cradle includes at least two charging output terminals electrically connected to the power source interface. A power tool system includes the charger and the hand-held power tool. A method of charging the power tool system includes contacting charging input terminals of the power tool with the charging output terminals, rotating the charging cradle and the power tool relative to the charging base and supplying charging current to at least one battery cell while the charging cradle and the power tool are allowed to freely swing relative to the charging base.

The invention relates to a preparation method of an electret polylactic acid meltblown nonwoven material, and belongs to the technical field of textile materials. According to the method, an inorganicelectret material nano silicon nitride and a polymer polytetrafluoroethylene are compounded to serve as a filler by means of a mechanical dispersion method, the charge storage capacity of the compound material can be effectively improved under a high-temperature or humid environment, the occurrence of an electret agglomeration phenomenon is avoided, and the service life of the product is prolonged; the compound filler and polylactic acid are meltblown and then subjected to treatment such as opening, impurity removal, combing, lapping, pre-needling, spunlacing and hot rolling, and the nonwovenmaterial is prepared. The method has the advantages that the inorganic electret material nano silicon nitride and the polymer polytetrafluoroethylene are compounded to serve as the filler by means ofthe mechanical dispersion method, and the charge storage capacity of the compound material can be effectively improved under the high-temperature or humid environment; the electret filler and the polylactic acid are compounded, so that the electrostatic potential of the surface of the polylactic acid nonwoven material is increased, and the charge storage capacity is improved.

A non-volatile memory device and fabricating method thereof are provided. In the deposition to form a tunneling dielectric layer, a composite charge trapping layer and a block dielectric layer, an ingredient of a depositing material or the depositing material is adjusted to form a grading energy level structure, such that carriers are trapped or erased more easily in accordance with a variation in grading energy level. Therefore, the carriers are stored more effectively and the probability that the electric leakage occurs is reduced substantially.

The invention discloses a functionalized graphene hydrogel / functionalized carbon cloth composite fabric, a flexible all-solid-state supercapacitor integrated electrode and a preparation method. Functionalized graphene hydrogel is fixed in a functionalized carbon cloth frame through a one-step hydrothermal method, and then lignin / polyaniline composite hydrogel and the functionalized graphene hydrogel / functionalized carbon cloth composite fabric are prepared into the flexible all-solid-state supercapacitor integrated electrode by adopting an in-situ polymerization method. According to the method, the functionalized graphene hydrogel is used for filling gaps and macroscopic macropores in carbon cloth, and serves as a 3D conductive scaffold, so that the load of active substances in the electrode can be obviously increased, the interface resistance of the electrode is reduced, and the conductivity of the electrode is improved; and the prepared integrated electrode is assembled into a symmetric supercapacitor which shows excellent area capacitance, super-high energy density, high mechanical flexibility and cycling stability.

The invention provides a platinum nano wire modified microelectrode array, and a platinum nano wire modification layer is arranged on the electrode surface of the microelectrode array. The microelectrode array takes platinum nano wires as surface modification layer, which is tightly bonded with the microelectrode substrate, and electrode failure due to disconnection can be prevented. The surface area of a modified microelectrode is greatly increased, electrochemistry impedance is greatly reduced, and the electrode charge injection capacity and charge storage capability are substantially increased. The power consumption of an implanted system can be reduced, and the electrical stimulation effect is improved. The modification layer has good biological compatibility, so that the application of the platinum nano wire modified microelectrode array in the biomedical field is increased. The invention further provides a preparation method of the platinum nano wire modified microelectrode array.

The invention provides a preparation method and application of uniform-size graphene quantum dots. The method adopts a strategy from top to bottom; oxidized graphene is used as raw materials; an ultrasonic auxiliary hydrothermal method is used; the ultrasonic mechanical stress is used for assisting the high oxidation effect of nitric acid for cutting carbon-carbon bonds; then, high-temperature heat treatment is performed to prepare a pure graphene quantum dot material with the uniformly distributed size. The method process is simple; the conditions are mild; the prepared graphene quantum dotshave good purity degree, small particle diameter and uniformly distributed size. Used as an electrode material of an energy storage device, the prepared graphene quantum dot material shows excellent electrical conductivity, high specific capacity, excellent rate performance, fast ion adsorption and transmission rate and long cycle service life; good application potential is realized in the field of energy storage devices.

The invention discloses a high and low dielectric polymer composite electret filter material and a preparation method thereof. The composite electret filter material is composed of a main filter layerand an insulating filter layer coated on the upper and lower surfaces of the main filter layer, wherein the main filter function layer is composed of high dielectric electrospun nanofibers, and the insulating filter layer consists of low dielectric loss electrospun microfibers and organic electret nanoparticles dispersed in microfibers. The composite electret filter material of the invention hashigh charge storage density and charge storage stability, the surface electrostatic potential can be stably stabilized at 0.8-2.0KV for a long time, The filtration efficiency of PM2.5 is greater thanor equal to 98%, the filtration pressure drop is between 20-50Pa, the mechanical properties are good, the service life is long, the preparation process is simple, and the material has broad application prospects in the field of indoor environmental purification.

The invention discloses an electrochemical deposition preparation method for a composite material used for microelectrode modification. The method comprises the following steps: subjecting graphene oxide (GO) to chemical reduction by using a reducing agent; then adding counter ions as a stabilizing agent for a reduced graphene oxide (rGO) solution and as counter ions for polymerization of conductive polymer monomer; and depositing the conductive polymer and graphene onto the surface of an electrode by using an electrochemical process. After polymerization, the monomer, the counter ions and rGO are deposited on the surface of the microelectrode through the action of ionic bonds. According to the invention, reduction and deposition of GO are separated, so reduction efficiency is improved and deposition is simplified; and after the biological microelectrode is modified by the composite material prepared in the invention, the alternating-current impedance of the microelectrode can be efficiently reduced, and charge storage capability of the microelectrode can be improved, so electric stimulation and electric recording performance of the biological microelectrode can be improved.

The invention relates to a preparation method of a non-volatile charge storage device, the non-volatile charge storage device and application thereof. The preparation method of the non-volatile charge storage device comprises the following specific steps: a) precipitating Al2O3 on the surface of a substrate by use of an atomic layer chemical vapor deposition method so as to form a tunneling layer; b) precipitating a layer of (HfO2)x(Al2O3)1-x film serving as a storage layer on the surface of the tunneling layer by use of the atomic layer chemical vapor deposition method; and c) precipitating a layer of Al2O3 serving as a barrier layer on the surface of the (HfO2)x(Al2O3)1-x storage layer by use of the chemical vapor deposition method. The non-volatile charge storage device comprises the tunneling layer, the storage layer and the barrier layer which are successively connected; Al2O3 is used as the tunneling layer and barrier layer of the storage device, and (HfO2)x(Al2O3)1-x is used asthe storage layer of the device. By using the method, the writing-in and erasing speeds of the device can be well improved, and simultaneously, the preparation method is simple to operate and easy tocontrol.