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Preparation method and application of uniform-size graphene quantum dots

A graphene quantum dot, uniform size technology, applied in the field of nanomaterials, can solve problems such as being unsuitable for mass production and application, uncontrollable size, cumbersome process steps, etc., achieve mild conditions, accelerate electron transfer rate, and increase active area. Effect

Active Publication Date: 2018-01-19
QINGDAO UNIV OF SCI & TECH
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Problems solved by technology

[0005] However, the existing process steps are cumbersome, the process is complicated, the cost is high, the yield is low, and the size cannot be controlled, so it is not suitable for mass production and application

Method used

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  • Preparation method and application of uniform-size graphene quantum dots
  • Preparation method and application of uniform-size graphene quantum dots

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Embodiment 1

[0039] (1) Preparation of graphene oxide: Add 26mL of concentrated sulfuric acid to a beaker in an ice-water bath at 0°C, then add graphite powder 1g, sodium nitrate 0.5g, add potassium permanganate 3g in small quantities, and stir for 2 hours from ice Remove from water bath. Add 46mL of water into the beaker, control the temperature of the system at 35°C, and stir the reaction for 30min. Then, keep stirring at 95°C for 15 minutes, then add 140mL of warm water. Add 3.3% H dropwise 2 o 2 solution until there are no more bubbles in the system. Centrifuge, and then wash with 5% hydrochloric acid solution, absolute ethanol, and deionized water. The precipitate obtained by centrifugation was put into a vacuum freeze dryer, and dried at -45° C. for 24 hours to obtain graphite oxide powder. The obtained graphene oxide is as attached Figure 1 (a) shows a monolithic layer with a smooth surface and a thickness of about 1 nm due to the presence of oxygen-containing groups.

[004...

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Abstract

The invention provides a preparation method and application of uniform-size graphene quantum dots. The method adopts a strategy from top to bottom; oxidized graphene is used as raw materials; an ultrasonic auxiliary hydrothermal method is used; the ultrasonic mechanical stress is used for assisting the high oxidation effect of nitric acid for cutting carbon-carbon bonds; then, high-temperature heat treatment is performed to prepare a pure graphene quantum dot material with the uniformly distributed size. The method process is simple; the conditions are mild; the prepared graphene quantum dotshave good purity degree, small particle diameter and uniformly distributed size. Used as an electrode material of an energy storage device, the prepared graphene quantum dot material shows excellent electrical conductivity, high specific capacity, excellent rate performance, fast ion adsorption and transmission rate and long cycle service life; good application potential is realized in the field of energy storage devices.

Description

technical field [0001] The invention relates to the technical field of nanomaterials, in particular to a method for preparing graphene quantum dots with uniform size distribution. Background technique [0002] In recent years, carbonaceous materials have been widely used in various fields due to their high electrical conductivity, low cost, green and non-toxic, high chemical stability, and wide temperature range. Graphene (G) as a new carbon material is produced by sp 2 A planar two-dimensional atomic crystal composed of a single layer of carbon atoms bonded by hybridized carbon atoms presenting a regular hexagonal lattice structure. Since its discovery in 2004, it has been widely studied in the field of nanotechnology because of its unique physical and chemical properties, especially its high conductivity and fast ion adsorption ability, making graphene materials in the electrodes of lithium-ion batteries or supercapacitors The material field has been widely used. Howeve...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/184H01G11/36H01G11/86H01M4/583H01M4/62
CPCY02E60/10
Inventor 隋丽娜董红周张硕于立岩董立峰
Owner QINGDAO UNIV OF SCI & TECH
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