39results about How to "Increase critical size" patented technology

The invention provides a method for controlling the consistency of critical dimensions after an ultra-deep hole plasma etching process. The method for controlling the consistency of the critical dimensions after the ultra-deep hole plasma etching process comprises the following steps: introducing mixed gas into a reaction chamber after the ultra-deep hole plasma etching process, wherein the mixed gas comprises nitrogen, hydrogen and fluorine-containing gas; performing a plasma process on the reaction chamber into which the mixed gas is introduced. A metal copper layer which is accumulated on the wall of the reaction chamber is removed by introducing the mixed gas into the reaction chamber after the ultra-deep hole plasma etching process and performing the plasma process on the reaction chamber into which the mixed gas is introduced, wherein the mixed gas comprises the nitrogen, the hydrogen and the fluorine-containing gas. Therefore, the problem of etching rate drift of an oxide layer after the ultra-deep hole plasma etching process is avoided / lightened; the consistency of the critical dimensions of the ultra-deep hole plasma etching mass production process and the consistency of the formed integrated circuit devices are improved.

The present invention provides a touch display panel, comprising: a first substrate; a thin film transistor disposed on the first substrate; a pixel electrode layer disposed on the thin film transistor, and the pixel electrode layer passes through a contact hole connected to the drain or source of the thin film transistor; the common electrode layer is arranged on the first substrate and under the pixel electrode layer, and the common electrode layer is divided into a plurality of common electrodes adjacent to each other. Slits are formed between the common electrodes, and the slits are connected to the contact holes above the slits. The touch display panel provided by the invention improves touch detection capability and display effect.

The invention discloses a germanium-silicon triode base region hard mask membrane layer structure, which comprises a silicon chip, wherein a collector region and a field isolation region are arranged on the silicon chip; a polycrystalline silicon layer and a germanium-silicon membrane layer are grown on the collector region and the field isolation region, and the germanium-silicon membrane layer is partially grown above the polycrystalline silicon layer; and an inorganic anti-reflection material layer and at least one hard mask membrane layer are grown above the germanium-silicon membrane layer. The invention further discloses a manufacturing method of the germanium-silicon triode base region hard mask membrane layer structure. Through adoption of the germanium-silicon triode base region hard mask membrane layer structure, the influence of a germanium-silicon membrane layer diffuse reflection beam to the appearance of the photoresist is reduced, the control acpability to key sizes in the production is improved, and photoetching patterns of small sizes are obtained.