44results about How to "Improve the exit rate" patented technology

An organic electroluminescent device comprises a reflecting layer, a glass substrate, a conductive film, a metal cathode, an n-doped electron transport layer, a p-n doped luminescent layer, a p-doped hole transport layer and a metal anode which are orderly stacked together. The organic electroluminescent device is a top-emitting device of an inverse structure; lights are emitted from the top of the device, and the glass substrate equipped with the conductive film acts as a backlight surface, thus the problems of light absorption by the substrate and light emission from the substrate are well solved. In addition, the inverse structure enables the refractive index of materials to be arranged from small to big based on the direction of emitted light, and total reflection will not occur for the light at the moment, thus reducing light emission loss caused by total reflection and improving light exitance.

The invention provides a display device. The display device comprises a display panel and a backlight module opposite to the display panel, wherein the backlight module comprises a lateral light source; the backlight module is provided with a through hole, which penetrates through the backlight module and are used for mounting functional modules. The display device also comprises a first masking tape which is arranged around the through hole and on the light-emitting surface of the backlight module for fixing the display panel and the backlight module; the first masking tape comprises a blackfirst surface adhered to the display panel, and a second surface adhered to the backlight module, wherein the second surface comprises a black first area and a white second area, the first area is arranged on the side of the through hole which is close to the lateral light source, and the second area is arranged on the side of the through hole which is away from the lateral light source.

The invention discloses a GaN-based LED integrated chip with multiple light-emitting sub areas, and belongs to the technical field of LED chip structures. The GaN-based LED integrated chip with the multiple light-emitting sub areas comprises a substrate, an n-GaN layer, a quantum well active area, a p-GaN layer, a current spreading layer, a P electrode and at least two light-emitting sub areas. Grooves which are mutually isolated are formed between adjacent light-emitting sub areas, and the bottoms of the grooves are placed on the surface of the substrate. According to the GaN-based LED integrated chip with the multiple light-emitting sub areas, the open circuit probability is lowered to the maximum degree when an interconnecting wire stretches across the grooves, the emergent probability of internal total reflected light of the chip can be improved, internal reflection loss is reduced, and therefore light extraction efficiency is improved.

The invention discloses a fabrication method of an LED chip electrode. The fabrication method includes the following steps that: dry etching is performed on an epitaxial layer, an N type GaN layer is exposed; an indium tin oxide film conductive layer is fabricated; a chromium layer is formed through evaporation; a nickel layer is formed through evaporation; annealing treatment is performed on the nickel layer under a nitrogen atmosphere, so that the nickel layer can form uniformly-distributed spherical nickel particles on the surface of the chromium layer; with the spherical nickel particles adopted as an etching mask, the chromium layer is etched, so that nanoscale recessed rectangular pits can be formed on the surface of the chromium layer through etching; the spherical nickel particles are removed through corrosion; an aluminized layer, a titanium layer, a platinum layer and a gold layer are formed sequentially through evaporation; and glue is removed through peeling, and as a result, the LED chip electrode can be obtained. The invention also discloses an LED chip electrode; the LED chip electrode includes a chromium layer, an aluminum layer, an evaporation aluminum, a titanium layer, a platinum layer and a gold layer which are distributed sequentially from bottom to top; and nanoscale recessed rectangular pits can be formed on the surface of the chromium layer through etching. According to the LED chip electrode and the fabrication method thereof of the invention, the nanoscale lumpy structures can be formed on the surface of the chromium layer, so that the exitance of light on the surface of the chromium layer can be increased; light that is reflected into the chip by the aluminum layer and is further reflected out can be increased, and therefore, the luminous efficiency of an LED can be obviously improved.

The invention discloses a method for encapsulating a light emitting diode by using a glass lens cavity with high extracting rate and light beam collimation. The method comprises the following steps of: step 1, preparing a glass lens of a sealed light emitting diode chip on a glass wafer; step 2, coating fluorescent powder: evenly coating a fluorescent powder layer on the periphery of the light emitting diode chip or coating fluorescent powder on the glass inner wall; and step 3, filling silica gel in a gap between the light emitting diode chip and a glass ball cavity, splicing with the silicon wafer carried with the light emitting diode chip through a glass encapsulating body so that the light emitting diode chip is located in a cavity at the back side of the glass encapsulating body. The invention can realize white light emitting diode with even light intensity and has high emission rate of light rays; the encapsulation glass lens realizes the collimation of the light beam; the encapsulating reliability is very good; and the effective working time of the light emitting device is greatly prolonged.

The invention discloses a LED, a manufacturing method thereof and a display device. The LED comprises: a first electrode, a second electrode, a light-emitting layer between the first electrode and thesecond electrode, and a light extraction layer on a side of the second electrode away from the light-emitting layer; wherein the light extraction layer comprises a photoresponsive material. Since thecis-structure of the photoresponsive material can be easily converted into a trans-structure under ambient light conditions and the refractive index of the trans-structure of the photoresponsive material is greater than the refractive index of the cis-structure, the refractive index of the photoresponsive material increases under the effect of ambient light so that the refractive index of the light extraction layer containing the photoresponsive material may also increase. Thus, more light can be refracted from the LED, which effectively increases the light emission rate. Therefore, when theLED is used in outdoor high light environment, the brightness of the display device can be enhanced without increasing the driving voltage difference of the LED, and the standby time is not affected.

The invention discloses a top-emitting organic electroluminescence device and a manufacturing method thereof. The top-emitting organic electroluminescence device comprises a substrate, a positive electrode, a hole injection layer, a hole transmission layer, a luminescent layer, an electron transmission layer, an electron injection layer and a negative electrode, wherein a titanium dioxide antireflection film is formed on the negative electrode. The manufacturing method of the top-emitting organic electroluminescence device comprises a procedure that the titanium dioxide antireflection film is formed on the negative electrode. Compared with a top-emitting organic electroluminescence device in the prior art, the top-emitting organic electroluminescence device has the advantages that the light emitting rate is high, and luminous efficiency is greatly improved.

The invention discloses a transparent conducting layer manufacturing method for increasing light emitting diode chip brightness. The method comprises following steps: etching a light emitting diode chip epitaxial layer through a dry method preparing a tin indium oxide film conducting layer on the epitaxial layer; preparing a nickel layer with thickness from 5 to 10 nm on the tin indium oxide film conducting layer by a vapor plating method; performing annealing to the nickel layer; forming uniformly distributed spherical nickel particles on the tin indium oxide film conducting layer surface; etching the tin indium oxide film conducting layer with the spherical nickel particles as a mask layer to form uniform concave rectangular pits on the tin indium oxide film conducting layer surface; removing the spherical nickel particles; coating the tin indium oxide film conducting layer with negative photoresist and exposing electrode zones after exposure and development; preparing metal electrodes at the electrode zones by means of the vacuum electron beam evaporation method; peeling the metal electrodes to obtain light emitting diode chip electrodes and removing the negative photoresist. By means of the method, the brightness of light diode chip is increased.

The invention discloses a GaN-based LED (Light Emitting Diode) having a nano-sized SiO2 grating passivation layer, and a processing method thereof. The GaN-based LED comprises a substrate and an epitaxial layer, wherein the epitaxial layer comprises an AIN nucleation layer, a GaN buffer layer, an n-type GaN layer, an InGaN / GaN superlattice layer, an In0.16Ga0.84N multiple quantum well layer, a p-AlGaN / GaN electronic blocking layer and a p-type GaN layer; a part of the epitaxial layer is etched to the n-type GaN layer, an un-etched part of the epitaxial layer forms a comb-shaped raised structure, the etched part of the epitaxial layer forms a comb-shaped groove structure matched with the comb-shaped raised structure; the p-type GaN layer is provided with an IOT layer, a SiO2 passivation layer and a P electrode thereon, the exposed n-type GaN layer after etching is provided with an N electrode, the SiO2 passivation layer is deposited between the N electrode and the n-type GaN layer, theSiO2 passivation layer is deposited on a sidewall of the raised structure; the ITO layer and the SiO2 passivation layer have graphical through-hole structures of which shapes are evenly distributed along the P electrode or the N electrode. The GaN-based LED of the invention has the beneficial effects that: the surface of the LED is protected, generation of a leakage current is limited, at the sametime, a current is expanded, current gathering is reduced, and luminous efficiency is improved.

This invention relates to one electron source, which comprises the following parts: one magnetic coil; multiple lamp wires on coils to heating the lamp wires to send electrons; cathode set by two inclination to form one hollow chamber with one first opening and one second open relative to first larger than first open; the magnetic coil and wires locate on second open; the said multiple lamp wiressend electron from first open.

The invention discloses a plastic optical reflecting cover for a tube lamp with an lenticular array on the surface. The plastic optical reflecting cover comprises a lamp assembling port and a light distribution cover, wherein the lamp assembling port is fixed on the bottom end of the light distribution cover, the lenticular array structure is arranged in the light distribution cover, the lenticular array structure is a semispherical structure, a prism structure, a pyramid structure, a rectangular lens structure, a pyramidal structure, a semi-cylindrical structure, a semi-elliptical structure and a parabolic curve structure; the lenticular array structure is distributed in a triangular form, a regular hexagonal form, a rectangular form, a radiative form, a circular form and an elliptical form. By adopting the plastic optical reflecting cover, no optical dead corner exists, the light energy utilization rate is increased, and a purpose for increasing the light emitting efficiency and light emitting uniformity can be realized.

The invention discloses a transparent conducting layer manufacturing method for increasing light emitting diode chip brightness. The method comprises following steps: etching a light emitting diode chip epitaxial layer through a dry method preparing a tin indium oxide film conducting layer on the epitaxial layer; preparing a nickel layer with thickness from 5 to 10 nm on the tin indium oxide film conducting layer by a vapor plating method; performing annealing to the nickel layer; forming uniformly distributed spherical nickel particles on the tin indium oxide film conducting layer surface; etching the tin indium oxide film conducting layer with the spherical nickel particles as a mask layer to form uniform concave rectangular pits on the tin indium oxide film conducting layer surface; removing the spherical nickel particles; coating the tin indium oxide film conducting layer with negative photoresist and exposing electrode zones after exposure and development; preparing metal electrodes at the electrode zones by means of the vacuum electron beam evaporation method; peeling the metal electrodes to obtain light emitting diode chip electrodes and removing the negative photoresist. By means of the method, the brightness of light diode chip is increased.

The invention discloses a plane lens and an illuminating lens device based on the plane lens. The plane lens comprises a transparent lens body. The transparent lens body is provided with a bottom face, a total-reflection face and an emergence face. The bottom face is provided with an incidence groove used for containing a light source and faces towards the interior of the transparent lens body. The side wall of the incidence groove serves as an incidence face. According to the improvement of the technical scheme, the incidence face comprises a small-angle incidence face body and a large-angle incidence face body; a transition curved face is arranged between the total-reflection face and the emergence face; the total-reflection face comprises a first total-reflection face body and a second total-reflection face body. The illuminating lens device comprises one or more plane lens. The plane lens and the illuminating lens device based on the plane lens have the advantages, which cannot be achieved by existing products, that the surface smoothness is good, cleaning is convenient, and the light-pervious efficiency is high.

The invention discloses an organic electroluminescent device which comprises a glass substrate, an anode layer, a hole injection layer, a hole transport layer, a luminescent layer, an electron transport layer, an electron injection layer and a cathode which are successively laminated. The anode layer is composed of a hafnium-containing compound layer, a conductive single metal layer and a praseodymium oxide layer which are successively laminated. The hafnium-containing compound has high refractive index and high light transmittance, thus reducing refractive index difference between an anode and the glass substrate, avoiding total reflection and effectively enhancing light extraction efficiency. The conductive single metal plays a role in electric conduction, thus raising carrier transmission efficiency, reducing interior energy consumption of the device and making energy to be used more in light extraction. The highest occupied molecular orbital energy of the praseodymium oxide is high, thus guaranteeing hole injection. The invention also discloses a preparation method of the organic electroluminescent device.

The disclosure provides a light-emitting diode epitaxial wafer and a preparation method thereof, belonging to the technical field of light-emitting diodes. An insertion layer is added between the p-type GaN layer and the p-type contact layer, and the insertion layer includes a Mg quantum dot layer and a first GaN layer sequentially stacked on the p-type GaN layer. The Mg quantum dot layer includes a plurality of Mg quantum dots distributed on the p-type GaN layer. The interface between the multiple Mg quantum dots and the p-type GaN layer and the first GaN layer will be relatively rough, which can increase the light transmission rate in the p-type GaN layer. The diffuse reflection at the interface of the GaN layer reduces the total reflection of light that may occur at the interface of the p-type GaN layer, thereby increasing the light output rate. The first GaN layer can cover the relatively rough surface of the Mg quantum dot layer to ensure the quality of the p-type contact layer grown on the first GaN layer. The light extraction rate of the finally obtained light emitting diode epitaxial wafer can be improved.

The invention belongs to the technical field of lithium ion batteries, and in particular relates to a hierarchical structure positive electrode material for lithium ion batteries and a preparation method thereof. The chemical formula of the hierarchical structure positive electrode material is specifically LiNi x co y Al 1‑x‑y o z Cl 2‑z ; 0.1≤x≤0.9, 0.1≤y≤0.9, 1.5≤z≤1.95, made by water mixing, molten salt mixing, sintering and crushing, by adding Cl element to replace the O element in the original NCA material, forming a different Compared with the NCA-like positive electrode of the traditional NCA material, the hierarchical structure positive electrode material has a regular and uniform microscopic morphology and has three characteristics of high potential, high specific energy, and high rate output.

According to the micron normally-installed LED device for inhibiting SRH non-radiative recombination and the preparation method and application of the micron normally-installed LED device, a micron hole array is prepared on a micro-size device, an N-type material is injected, the effect of the micron hole array is to form a circle of high-resistance area on the edge of a P-type semiconductor material transmission layer, and therefore current is limited to be expanded to an area with many side wall defects on the edge of the device. And when the carriers are diffused to the edge, SRH recombination can be caused due to the existence of etching defects, so that the SRH recombination of the carriers can be fundamentally reduced, and the external quantum efficiency is improved.

The invention relates to a method for enhancing the internal quantum efficiency of an ultraviolet LED through femtosecond laser, which belongs to the technical field of semiconductor optoelectronic devices. According to the method, the femtosecond laser beam is used for processing on the surface of the GaN-based LED, the Ga nano-particles are obtained through single-point ablation in an oblique incidence mode, and the GaN-based LED internal quantum efficiency in the ultraviolet band is improved based on surface plasmon excimer excitation regulation and control. The method is simple and easy to implement, single-pulse processing is carried out through oblique incidence of femtosecond laser under the condition that new metal impurities are not introduced, and the material is induced to generate coulomb explosion phase change by utilizing the high peak density of the femtosecond laser and the high-temperature decomposition characteristic of the GaN material, so that the metal Ga nano-particles are formed, and large-area efficient processing can be achieved; and finally, the photoluminescence (PL) intensity and the internal quantum efficiency of the ultraviolet band are effectively enhanced, and the method can be widely applied to the fields of medical sterilization, secret communication and the like.

The invention belongs to the technical field of a lithium ion battery and particularly relates to a hierarchical structure positive pole material for the lithium ion battery and a method for preparingthe hierarchical structure positive pole material for the lithium ion battery. A chemical formula of the hierarchical structure positive pole material is specifically LiNixCoyAl1-x-yOzCl2-z, whereinthe x is not smaller than 0.1 and is not greater than 0.9, the y is not smaller than 0.1 and is not greater than 0.9, the z is not smaller than 1.5 and is not greater than 1.95, the hierarchical structure positive pole material is prepared through water mixing, molten salt mixing, sintering and pulverization, by replacing O elements in an original NCA material by adding Cl elements, an NCA-type positive pole different from a conventional NCA material is formed, and the hierarchical positive pole material has the regular uniform microscopic morphology and further has high potential, high specific energy and high magnification output.