The present invention provides a
semiconductor device that can
restrict the
dissolution hindering phenomenon in a chemically amplified
resist film. More specifically, after the formation of a contact pattern on a
semiconductor substrate, a wiring pattern is formed on the contact pattern. A SiC film, a first SiOC film, a SiC film, a second SiOC film, a USG film as a
diffusion preventing film, and a
silicon nitride film as a reflection preventing film, are formed on the wiring pattern. A dual damascene structure is then formed using the chemically amplified
resist film and another chemically amplified
resist film. In this manner, the N2 gas generated during the formation of the
silicon nitride film as a reflection preventing film can be prevented from diffusing into the second SiOC film formed under the
silicon nitride film. Accordingly, the reaction of the N2 gas with the H group contained in the second SiOC film and the generation of an amine group such as NH in the second SiOC film can be prevented. Thus, the
dissolution hindering phenomenon in the chemically amplified resist film can be avoided.