Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Pattern forming method and wiring pattern forming method, and electro-optic device and electronic equipment

a technology of pattern forming and pattern forming, which is applied in the direction of diffusion transfer process, thermography, instruments, etc., can solve the problems of difficult patterning, high cost and large-scale device, and the above-mentioned related art, etc., to achieve low cost device structure, high precision, and efficient conversion into thermal energy

Inactive Publication Date: 2007-01-11
SEIKO EPSON CORP
View PDF3 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention provides a pattern forming method that allows for high precision patterning of a thin film using a simple and low-cost technique. The method involves using a sublimable material that is heated and vaporized or decomposed by light to remove the thin film in the desired region. The method can be performed using a photothermal conversion material converting light energy into thermal energy, which can be efficiently converted into the thermal energy needed to sublimate the sublimable material. This eliminates the need for expensive large-scaled light irradiating devices and masks, resulting in higher precision patterning. The method can be used with various light irradiating devices, making it more convenient and cost-effective.

Problems solved by technology

Meanwhile, the above-mentioned related art has a problem described below.
This is because an absorption band of the monomolecular film to be patterned exists in the short wavelength, and with regard to infrared rays of a long wavelength which does not have the absorption band or the like, however high energy light is irradiated, the patterning is difficult.
Therefore, the patterning of an organic thin film such as the monomolecular film has required an expensive large-scaled device such as ultraviolet irradiation and electron beam under vacuum.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Pattern forming method and wiring pattern forming method, and electro-optic device and electronic equipment
  • Pattern forming method and wiring pattern forming method, and electro-optic device and electronic equipment
  • Pattern forming method and wiring pattern forming method, and electro-optic device and electronic equipment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0040] Hereinafter, a description of a pattern forming method of the present invention is given referring to the drawings. FIG. 1 is a schematic structural view showing one embodiment of a pattern forming device used for the thin film pattern forming method of the present invention. In FIG. 1, a pattern forming device 10 comprises a laser light source 111 emitting laser light flux having a predetermined wavelength, and a stage 12 supporting a base material 1 to be processed. On an upper surface of the base material 1, a photothermal conversion layer 4 is provided, on the photothermal conversion layer 4, a sublimable dyestuff layer 5 is provided, and on the sublimable dyestuff layer 5, a thin film 2 is provided. In this structure (the respective layers on the upper surface side) of the base material 1, it is also possible that the photothermal conversion layer 4 is omitted to provide the sublimable dyestuff 5 on the upper surface of the base material 1, and to provide the thin film 2...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
wavelengthaaaaaaaaaa
thicknessaaaaaaaaaa
temperatureaaaaaaaaaa
Login to View More

Abstract

To provide a pattern forming method enabling a thin film to be patterned with high precision by easy and low cost techniques. A thin film 2 is provided on a base material 1 containing a sublimable dyestuff, light is irradiated to the base material 1, and heat generated by the light irradiation sublimates the sublimable dyestuff in a desired region, thereby removing the thin film 2 corresponding to an irradiation region where the light is irradiated to thereby pattern this thin film 2.

Description

[0001] This is a Divisional of application Ser. No. 10 / 898,344 filed Jul. 26, 2004. The entire disclosure of the prior applications is hereby incorporated by reference herein in its entirety.BACKGROUND OF THE INVENTION [0002] 1. Field of Invention [0003] The present invention relates to a pattern forming method for forming a thin film pattern on a base material and a forming method of a wiring pattern using the thin film pattern, and an electro-optic device and electronic equipment. [0004] 2. Description of Related Art [0005] Conventionally, as a manufacturing method of a device having a fine wiring pattern such as a semiconductor integrated circuit, a photolithography method is often used, however a device manufacturing method using a droplet discharging method (ink jet method) has attracted attention. There is proposed a method in which in the case where the fine wiring pattern is formed using the droplet discharging method, in order to increase precision in a pattern line width, ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(United States)
IPC IPC(8): H01L21/00H01L21/302G03F7/004B05D3/06B05D3/12B41M5/24B41M5/46G02B5/20G02F1/1335G02F1/1343G03C8/00G03F7/00G03F7/36H01L21/20H05B33/10H05B33/14H05B33/26H05K3/06H05K3/14H10K99/00
CPCB41M5/24B41M5/46H01L51/0004B82Y30/00B41M2205/38H10K71/13H01L21/20
Inventor TOYODA, NAOYUKI
Owner SEIKO EPSON CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products