33results about How to "Guaranteed processing yield" patented technology

The invention discloses an aging treatment method and an aging treatment system applied to a display panel. The initial cut-off voltage range of the transistor is determined according to the initial characteristic curve of the transistor that needs aging treatment in the display panel; and the initial cut-off voltage range is determined according to the initial cut-off voltage range. The gate-source voltage and drain-source voltage required by the transistor to increase the cut-off voltage range of the transistor; according to the determined gate-source voltage and drain-source voltage required by each transistor, perform aging treatment on the transistors that need aging treatment in the display panel . In this method, since the aging treatment voltage applied to each display panel is obtained according to the transistors in the display panel, the effect after aging treatment is good, and the process yield and the stability of product TFT characteristics can be effectively guaranteed.

The invention discloses a bearing assembly device and a method for using it, comprising a processing mechanism for processing cold-rolled steel bearings, a detection head for detecting the processing progress, a moving mechanism for transferring processed materials, and a clamping and pushing mechanism. The processing mechanism is installed on the upper end of the support mechanism, the detection head is arranged at the discharge end of the processing mechanism, the moving mechanism is arranged on the front side of the processing mechanism, and a The clamping and pushing mechanism is provided with a collection mechanism on the support mechanism. The device of the present invention adopts overall automation to process the cold-rolled steel bearing in flow water, and cooperates with the detection head to ensure the processing efficiency and yield rate, and uses the cooperation of the moving mechanism, the clamping and pushing mechanism, and the collecting mechanism to quickly detect and reject during processing Drop unqualified products, avoid downtime after producing unqualified products, and improve work efficiency.

The invention discloses a forming method of a thin-wall annular sealing groove of a superalloy. The forming method of the thin-wall annular sealing groove of the superalloy comprises the following steps that a circular ring blank member with a cross-sectional shape in a right-angled groove shape is obtained by machining, and the annular blank member is provided with an annular outer vertical groove wall, an annular groove bottom plate and an annular inner vertical groove wall; the annular groove bottom plate is clamped and fixed, and a notch of the annular blank member is distributed downward;the groove inner shape supporting is carried out on the annular inner vertical groove wall, and the annular outer vertical groove wall is machined by adopting a rolling method; a split type structureis adopted in the groove inner shape supporting of the annular inner vertical groove wall, and disassembling and demoulding are separately carried out after an outer side annular groove is machined;the groove inner shape supporting is carried out on the annular inner vertical inner groove wall, and the annular inner vertical grove wall is machined by adopting the rolling method; the split type structure is adopted in the annular inner vertical groove wall, and disassembling and demoulding are separately carried out after an inner side annular groove is machined; and parts after machined areremoved to obtain the thin-walled annular sealing groove of the superalloy.

The invention discloses a two-way twistable staggered-comb teeth electrostatic driving variable optical attenuator which comprises a substrate, fixed comb teeth units, a micromirror, movable comb teeth units, two support rods, insulating medium layers, two twisting rods and two movable electrode regions, wherein an oxidation insulating layer is fixedly connected between each of the two movable electrode regions and the substrate, and the insulating medium layers are respectively embedded to the middle parts of the two support rods, the two twisting rods and the micromirror; one ends of the two support rods are fixedly connected onto the micromirror, and the other ends of the two support rods are fixedly connected onto the movable electrode regions by the twisting rods; and two movable comb teeth units which are symmetrically arranged with each other along the support rods are respectively and fixedly connected onto the two support rods, and movable comb teeth in each movable comb teeth unit and fixed comb teeth in each fixed comb teeth unit are distributed with one another in a staggered way. According to the variable optical attenuator, the two-way twisting can be realized, and the twisting position of the micromirror can be accurately controlled. Meanwhile, the invention further discloses a preparation method of the variable optical attenuator, which is high in reliability and high in machining precision.

The present invention relates to the technical field of lithium batteries, in particular to a feeding device and a feeding method for a battery delivery system, wherein a feeding device for a battery delivery system includes: a six-axis manipulator, a feeding bracket, and several clamping materials The clamping part and the clamping part, as well as the clamping surface of the clamping part, have two opposite clamping plates, the two clamping plates are arranged obliquely and the distance between the two clamping plates is from the side far away from the feeding bracket to close to the feeding One side of the bracket gradually increases; there are several clamping blocks fixedly connected to the end surface of each clamping plate, and the clamping block is located on the side close to the two clamping plates; the ring six-axis manipulator is equipped with an incoming material placement mechanism and an upper Material conveying mechanism and incoming material placement mechanism are suitable for placing trays with materials; when the six-axis manipulator is located in the area of ​​the incoming material placement mechanism, the two clamping plates can be rotated to be parallel to the outer side walls of the material; after the material is clamped by the two clamping plates , the pressing part can push the material to offset against the clamping block, so that the clamping block can position the material.

A method for forming patterns for semiconductor device includes following steps. A substrate is provided. The substrate includes a hard mask layer and a sacrificial layer formed thereon. A plurality of spacer patterns parallel with each other are formed on the substrate. A plurality of first blocking layers are formed in the sacrificial layer after forming the spacer patterns. A plurality of second blocking layers exposing at least a portion of the sacrificial layer and at least a portion the first blocking layer are formed on the substrate after forming the first blocking layer. Next, the sacrificial layer and the hard mask layer are etched with the spacer patterns, the first blocking layers and the second blocking layer being used as etching masks to form a patterned hard mask layer on the substrate.

The invention discloses a full-automatic intelligent lamp filament terminal machine which comprises a machine body. A conveying device for conveying a terminal metal material strap is arranged on the machine body. The full-automatic intelligent lamp filament terminal machine is characterized in that the conveying device is sequentially provided with a connecting rib precut die, a solder paste injecting device and a terminal pressing die in the conveying direction of the metal material strap, a lamp filament conveying device which can automatically send a lamp filament into a terminal pressing groove in the terminal metal material strap is arranged on one side of the terminal pressing die, the terminal pressing die comprises a lower die holder and an upper die holder, an outer guide column is arranged on the upper die holder, an outer guide hole for guiding the outer guide column to slide therein is formed in the lower die holder, a female die back plate is arranged on the upper side of the lower die holder, a pushing and ejecting device for making a lamp filament located in the middle of the terminal metal material strap is arranged on the female die back plate, and a lamp filament terminal pressing device is arranged on the lower side of the upper die holder.

The invention discloses a one-direction torsion and high-balance variable optical attenuator which comprises a substrate, fixed comb tooth units, two movable electrode regions, a micromirror, movable comb tooth units and two support rods, wherein a cavity is arranged at the upper part of the substrate; a first silicon dioxide insulating layer is arranged between each movable electrode region and the substrate; one ends of the two support rods are respectively and fixedly connected with the micromirror; the other ends of the two support rods are respectively and fixedly connected with the movable electrode regions through torsion rods; the movable comb tooth unit is fixedly connected to the lateral surface of each support rod; the movable comb tooth units are positioned above the fixed comb tooth units; the fixed comb tooth unit is positioned on one side of each support rod; fixed comb teeth in the fixed comb tooth units and movable comb teeth in the movable comb tooth units are arranged in a staggered manner; and the micromirror, the movable comb tooth units, the support rods and the torsion rods are respectively positioned in a suspension state. The one-direction torsion and high-balance variable optical attenuator can realize accurate control over the torsion angle at any position; meanwhile, the invention also provides a preparation method for the one-direction torsion and high-balance variable optical attenuator; and the preparation method is simple, high in reliability and high in processing precision.

The invention relates to a method for forming planar thick isolation medium, which is particularly applicable to the development and the production of the silicon microwave power transistor and microwave monolithic integrated circuit. The method for forming the planar thick isolation medium is characterized by comprising the following process steps: (1) etching an deep hole array on the surface of a silicon wafer; (2) oxidizing all the silicon substrates left on the edges of the deep hole into silicon dioxide with the oxidization process; and (3) covering the deep holes with CVD isolation medium to form the thick isolation medium. The invention has the advantages that the thickness of the isolation medium can be adjusted by the etching depth of the deep holes, an isolation medium film which is as thick as the chip can be obtained, the surface flatness of the silicon wafer and the yield of the isolation medium which is finely processed can be ensured, and less capacitance can parasitize on the isolation medium.