The invention relates to an inverted LED epitaxial
wafer of a GaAs-based armoring layer structure and a manufacturing method of the inverted LED epitaxial
wafer. The inverted LED epitaxial
wafer sequentially comprises a GaAs substrate, a GaAs buffer layer, a
corrosion blocking layer, an
ohmic contact layer, an N-Al<x>Ga<1-x>InP first armoring layer, an N-Al<x>Ga<1-x>InP second armoring layer, a lower limitation layer, a multi-
quantum well luminous region, an upper limitation layer and a current extension layer from bottom to top. By arranging the second armoring layer, the inverted LED epitaxial wafer is matched with a conventional structure lattice, the high-quality armoring layer matched with the lattice can be enabled to grow in a matching way at a relatively high
growth speed, the carbon-
oxygen content can be prevented, the
crystal growth quality is improved, the current extension and the optical characteristic are ensured, and the reliability and the stability of the device are improved; since the Al<x>Ga<1-x>As material can be grown at a high speed, the
process time of an inverted LED is shortened by 20-35%, the product can be produced on a large scale, the external
quantum efficiency can be greatly improved, so that the light efficiency of the product is greatly improved; and the brightness of the inverted LED can be improved by 60-80% compared with a traditional structure, and thus, the high-efficiency inverted LED can be produced on a large scale.