70results about How to "Guaranteed optical properties" patented technology

A flexible display is disclosed. In one aspect, the flexible display includes a window layer including a bending area and a non-bending area and a flexible display panel formed over a surface of the window layer and configured to display images. The bending area includes a plurality of cut portions which are configured to be at least partially separated along a plurality of cut lines formed therebetween.

This invention discloses a method for preparing water-soluble quantum dots in phase transfer condition. The water-soluble quantum dots are composed of oil-soluble quantum dots coated with amphiphilic surfactant to form a hydrophilic outer layer. The method comprises: utilizing quaternary ammonium salt amphiphilic surfactant as the phase-transfer agent, and transferring the quantum dots from oil phase to water phase. The water-soluble quantum dots have such advantages as high fluorescent intensity, narrow and symmetric fluorescent emission peak, high quantum yield, high stability, uniform dispersion and long storage life (2 months). The method has such advantages as simple process, good repeatability, and low cost. The water-soluble quantum dots can be used for biomedical analysis and detection such as fluorescent probe and cell imaging.

The invention is a backlight module, comprising an optical diaphragm group and a frame holding the optical diaphragm group, where the optical diaphragm group, where the optical diaphragm group is stacked of multiple optical diaphragm layers and the edge of the optical diaphragm group has an integrated salient formed by salient units on the edges of these diaphragms; and the frame has a groove to hold the salient.

The invention discloses a method for preparing a SiO2-coated Au@Ag core-shell nanorod. The method is characterized by firstly carrying out surface modification on an Au@Ag core-shell nanorod by adopting polyvinylpyrrolidone, then adding the Au@Ag core-shell nanorod modified with polyvinylpyrrolidone to isopropanol and using tetraethyl orthosilicate as a precursor and ammonia water as a catalyst to react at 35-50 DEG C for 2-4 hours, thus obtaining the Au@Ag@SiO2 core-shell nanorod. The preparation method has the effects of not only reducing the preparation time of the SiO2-coated Au@Ag core-shell nanorod but also solving the problem that the Au@Ag core-shell nanorod has poor dispersibility in organic phases and reducing the biotoxicity of the Au@Ag core-shell nanorod and provides a basis for application of the Au@Ag core-shell nanorod to the fields of biological detection, drug delivery, photothermal therapy, surface fluorescence enhancement, catalysis, and the like.

The back light module consists of one frame, one reflecting sheet, at least one lamp tube, one diffusion board, several optical diaphragms and at least one support member. The reflecting sheet is configured in the bottom of the frame, the lamp tube is configured inside the frame and over the reflecting sheet, the diffusion board is configured on the frame and located over the lamp tube, the optical diaphragms are configured on the diffusion board, and the support member on the reflecting sheet includes two support parts to support the diffusion board and the lamp tube separately.

The invention relates to an optical fiber coupling connector and a manufacturing method of the optical fiber coupling connector. The optical fiber coupling connector comprises a plug body, a first lens embedded in the plug body, a socket body and a second lens embedded in the socket body, wherein the first lens comprises a first optical surface; the second lens comprises a second optical surface which is coupled with the first optical surface in an optical way; the plug body is molded with the first lens in an integral way by transparent plastic, and the socket body is also molded with the second lens in an integral way by the transparent plastic, wherein the melting point of the transparent plastic is lower than that of polyetherimide, and the fluidity of the transparent plastic is better than that of the polyetherimide; and the first optical surface and the second optical surface are respectively plated with a transparent film. After the optical fiber coupling connector is manufactured by the method, the optical characteristics of the optical fiber coupling connector can be maintained, and the production cost is greatly reduced.

The method for making a lens with a first convex lens surface (32) and a second lens surface (33) includes feeding a glass melt drop into a concave mold (2, 10), precise pressing both sides of the glass melt drop in the concave mold (2, 10) together with a press die (20) and immersing the press die (20) in the glass melt drop so that a supporting rim (34) with predetermined dimensions, which protrudes beyond a highest point of the second lens surface (33), is formed on the lens by glass material displaced by the precise pressing. The apparatus for precise pressing includes an upper mold part (10) a lower mold part (2) and the press die (20).

The invention relates to an inverted LED epitaxial wafer of a GaAs-based armoring layer structure and a manufacturing method of the inverted LED epitaxial wafer. The inverted LED epitaxial wafer sequentially comprises a GaAs substrate, a GaAs buffer layer, a corrosion blocking layer, an ohmic contact layer, an N-Al<x>Ga<1-x>InP first armoring layer, an N-Al<x>Ga<1-x>InP second armoring layer, a lower limitation layer, a multi-quantum well luminous region, an upper limitation layer and a current extension layer from bottom to top. By arranging the second armoring layer, the inverted LED epitaxial wafer is matched with a conventional structure lattice, the high-quality armoring layer matched with the lattice can be enabled to grow in a matching way at a relatively high growth speed, the carbon-oxygen content can be prevented, the crystal growth quality is improved, the current extension and the optical characteristic are ensured, and the reliability and the stability of the device are improved; since the Al<x>Ga<1-x>As material can be grown at a high speed, the process time of an inverted LED is shortened by 20-35%, the product can be produced on a large scale, the external quantum efficiency can be greatly improved, so that the light efficiency of the product is greatly improved; and the brightness of the inverted LED can be improved by 60-80% compared with a traditional structure, and thus, the high-efficiency inverted LED can be produced on a large scale.

The invention provides a forming method for an optical fingerprint recognition device. The forming method comprises the steps that a silicon substrate is provided; a light transmitting substrate and an image sensor chip are provided and bonded, and a lens array is formed on the light transmitting substrate through a gradually-changing luminous flux photoetching method, wherein the lens array corresponds to a light sensing array of the image sensor chip; the silicon substrate and the light transmitting substrate are bonded, the silicon substrate is etched so that a through hole array corresponding to the lens array can be formed and the lens array can be exposed, and silicon light bars are formed between adjacent lenses. According to the forming method for the optical fingerprint recognition device, the lens array is formed through the gradually-changing luminous flux photoetching method, requirements for manufacturing of a more exquisite and complex lens can be met, optical characters needed by the optical fingerprint recognition device are accurately guaranteed, and the forming method is suitable for a portable electronic device and is compatible with an existing chip manufacturing and packaging technology so that cost can be reduced.

The invention belongs to the technical field of silicon dioxide optical membrane stress regulation, and in particular relates to a method for regulating and controlling ion beam sputtered silicon dioxide optical membrane stress. According to the method, the size of oxygen flow in the ion beam sputtering process is adjusted so as to control the stress of an SiO2 membrane on the premise that the on-crystal micro structure and the optical property of the membrane are ensured, and thus the method is applied to the fields of super-low consumption laser membranes and high-damage threshold laser membranes. According to the scheme, after a substrate is subjected to chemical washing, ultrasonic wave washing and ion beam bombardment washing in sequence, the size of the oxygen flow is adjusted under the condition that other parameters are not changed in the preparation process, so that the stress of a prepared silicon dioxide membrane is effectively controlled, and the silicon dioxide membrane can meet the application in the fields such as super-low consumption laser membranes and high-damage threshold laser membranes.

The invention provides a composite quantum dot. The composite quantum dot is a halide anion modified quantum dot, comprises quantum dot particles, and halide anions combined with the surfaces of the quantum dot particles. The composite quantum dot possesses electronegativity characteristic; the quantum dot solid state membrane can be prepared through electrodeposition. According to the composite quantum dot with the above characteristics, the optical characteristics of the quantum dot are not changed, quantum dot stability and charge conductive performance are improved, so that the quantum dotsolid state membrane can be prepared through electrodeposition.

The invention provides an optical fingerprint recognition device forming method, and the method comprises the steps: a silicon substrate is provided, a groove array is formed on the silicon substrate; a light transmission substrate and an image sensor chip are provided and bonded, a lens array is formed on the light transmission substrate through a gray-tone lithography method, and the lens array is corresponding to a photosensitive array of the image sensor chip; the groove surface of the silicon substrate is bonded with the light transmission substrate, the groove array is corresponding to the lens array, un-grooved surface of the silicon substrate is etched to expose the lens array, and a silicon diaphragm is formed between adjacent lens. According to the invention, the lens array can be formed through the gray-tone lithography method, the precise and complex lens production request can be met, the optical properties needed by an optical fingerprint recognition device can be accurately ensured, the method is suitable for portable electronic equipment and is compatible with the chip production and packaging technology in prior art, so that the cost can be reduced.

The invention belongs to the technical field of electron beam lithography processing and particularly relates to a method for manufacturing an X-ray lens high in height-width ratio. The method comprises the steps that on a substrate or a membrane with a metal seed layer deposited, a design pattern of an X-ray convergent lens is prepared on photoresist through an electron beam lithography technology; then, a condenser structure high in height-width ratio is obtained through a nanometer electroplating technology; finally, the photoresist is dissolved through an organic solution such as acetone, and thus the condenser lens which is high in height-width ratio and is applied to the X-ray imaging field is obtained.

The embodiment of the invention relates to intelligent glasses for myopia. The intelligent glasses for myopia comprises a glasses frame, a ranging device which is arranged on the glasses frame, a leftvariable focal lens and a right variable focal lens, wherein each variable focal lens comprises a base sheet, a secondary sheet, transparent liquid, a pressure regulator and a chip; the chips are used for receiving current range data; when the current range data is less than a preset watching range threshold value, the current range data holding time is monitored; if the holding time is greater than the time threshold value, the chips are capable of generating a focal length adjusting instruction and sending to the pressure regulators; then pressure regulators are used for receiving the focallength adjusting instruction and changing the volume of the transparent liquid in an empty cavity based on the focal length adjusting instruction in order to adjust the pressure of the transparent liquid on the base sheets and the secondary sheets, so that the whole variable focal lens can be subjected to focal length change while the secondary sheets are deformed under the change of the pressurefrom the transparent liquid, and as a result, the focus variation is realized; after focus variation, eyes adjust to adapt to the varied focus, so that the focal length of the eyes are varied, and the tense eye adjusting muscle can be properly released, and the asthenopia is relieved.

The invention relates to a method for correcting deposition errors of broadband anti-reflection films prepared by a quartz monitoring method. The method comprises the following steps: 1) a monitoringthickness is designed; a four-layer film system is prepared; and the four-layer film system comprises two layers of films with two thicknesses and prepared by high-refractive-index materials, and twolayers of films with two thicknesses and prepared by low-refractive-index materials; 2) through reverse inversion and linear fit of the prepared four-layer film system, film thickness errors of the high-refractive-index materials and the low-refractive-index materials are obtained; and 3) film plating parameters of the broadband anti-reflection films to be prepared are corrected by the film thickness errors of the same materials. Compared with the prior art, the method can effectively correct the deposition errors and improve the spectral property, is simple in operation and high in generality, and achieves wide production of the broadband anti-reflection films in reality.

The invention provides an optical fingerprint recognition device and a forming method thereof. A lens array is formed through a gradually-changing luminous flux photoetching method so that requirements for manufacturing of a more exquisite and complex lens can be met, optical characters needed by the optical fingerprint recognition device are accurately guaranteed, and the optical fingerprint recognition device and the forming method thereof are suitable for a portable electronic device and are compatible with an existing chip manufacturing and packaging technology so that cost can be reduced.

The invention discloses an ion implantation method. In the method, high energy ion beams in ion beams which are emergent along a straight path are implanted in a workpiece at a preset incident angle, the workpiece is arranged at a preset station on the straight path, low energy ion beams in the ion beams are subjected to deflection at least once by electrical effect or magnetic effect, the position and / or the angle of the workpiece are / is adjusted relative to the preset station to enable the low energy ion beams to be implanted in the workpiece at a preset emergent angle, and the implantation positions of the low energy ion beams and the high energy ion beams on the workpiece are the same. The method does not regulate the beam path in front of a speedchange turning area, thus lowering the difficulty in beam adjustment, maintaining beam optical characteristics better, ensuring good stability of ion beams, facilitating beam control, shortening adjustment time consumed by beam path switch greatly and improving beam utilization ratio.

The object of the present invention is to provide a shipping tray for optical components, which prevents the tipping of the optical components during transportation and maintains the optimization of the optical properties of the optical components. In a shipping tray for optical components, a single edge of a plurality of optical components each having two main surfaces formed as horizontal flat surfaces, arranged vertically in sequence in the transverse and longitudinal directions on an adhesive tape positioned on the bottom surface of the main container ; A plurality of optical elements are covered by a cover, and a plurality of recesses are formed in the cover for respectively accommodating a plurality of optical elements. Each depression in the cover has a hole portion provided in its stepped portion, into which one of the optical elements is vertically inserted and from which the free edge side protrudes, and the shape of the hole portion is oval.

The invention relates to a GaAs base improved window layer structure green-yellow light LED and a manufacturing method thereof, and belongs to the photoelectron technical field; the structure comprises a GaAs substrate, a GaAs low temperature buffer layer, a Bragg reflector layer, an AlInP lower limit layer, a multi-quantum well luminescence area, an AlInP upper limit layer, a P type (Al<x>2Ga 1-<x>2)<y> 2In1-<y>2P first window layer and a P type GaP second window layer. A MOCVD device is employed to increase a high quality window layer matching with crystal lattices in a normal green-yellow light LED structure, thus forming an improved dual-layer window layer, thus preventing the oxidation of the first window layer, improving the quality of an original result first layer window layer, increasing the current expansion yield rate and optics window layer effect, and improving the device reliability and stability.

The invention belongs to the field of solar energy technology, and discloses a low-emissivity coated glass, and a preparation method thereof. The low-emissivity coated glass comprises a glass substrate and a film stack arranged on at least one surface of the glass substrate; the film stack comprises n groups of laminated film layers, and a Si3N4 film on the outermost film layer of the n groups oflaminated film layers; each group of the laminated film layers comprises a SiO2 layer, a SiONx layer, a Si3N4 layer, a SiONx layer, a SiO2 layer, and a SiONx layer successively from the side close tothe glass substrate and the side far away from the glass substrate. The low-emissivity coated glass possesses low emissivity on certain light wave bands, relatively high visible light transmissivity,and relatively excellent film layer stability, and is suitable to be used in building doors and windows, curtain walls, and photovoltaic assemblies.

The invention provides a laser scanning unit and a laser printer. The laser scanning unit comprises a laser diode, a collimating lens group, a polygonal mirror motor and an organic photo conductor which are set along a light path. The collimating lens group comprises shaping lenses which enable divergence angles of laser beams emitted by the laser diode to be equal in a vertical direction and a parallel direction. According to the design, only single-time optical shaping and focusing are required and the focusing does not need to be carried out for the beam rotationally reflected by the polygonal mirror motor, at each angle, so a design verification period for optical development is greatly reduced. Compared with the prior art, the laser scanning unit and the laser printer have the advantages that an FTL lens is avoided, so development cost is reduced and production cost is greatly reduced. Control over accumulated tolerance is facilitated through reduction of optical elements, and optical performance is relatively stable.

The invention discloses a dual packing material of retinyl membrane protein with optical response and making method in the macromolecular material and information material technical domain, which is characterized by the following: adopting once package of protein dispersing and fixing as goal to connect twice package based on separation and protection, appearance control and surface modification of optical property as goal; making the packed material as optical element keep good property in the storing, assembling, detaching and transporting course; fitting for preparing standardized element; increasing the fitting scale; providing beneficial condition for technical communication and scaling usage.

A lighting system (11) enabling the suppression of peeling and warpage of a reflector (28) by increasing heat-releasing property. The reflector (28) having a storage part (29) for storing a light emitting diode element (21) is disposed on a substrate (22), a visible light converting layer (32) is formed on the storage part (29), and a lens (33) is disposed on the reflector (28). A circuit pattern (25), the light emitting diode element (21), the reflector (28), the visible light converting layer (32), and the lens (33) are disposed on the substrate (22), and the reflector (28) and the lens (33) are adhered to each other with a same type of adhesive agent (23). Thus, since the heat-releasing property of the system can be increased, the peeling and warpage of the reflector (28) can be suppressed and, accordingly, the optical characteristics of the system can be maintained.

The present invention provides a laser scanning unit and a laser printer. The laser scanning unit comprises a laser generator disposed along an optical path, a lens group, a polygon motor, and a lightreceiving surface; and at least one reflecting mirror for folding laser beams is disposed between the lens group and the polygon motor. The unit folds the laser beams by adding one or more reflectingmirrors, ensures optical characteristics while optimizing component layout design, can greatly reduce overall size, and can reduce structure materials and save costs. The overall size is reduced, which is more conducive to the miniaturization and lightweight design of the whole machine. The unit makes overall size smaller, and is more advantageous for miniaturization and lightweight design of thewhole machine.

A sintered body which is composed of indium (In), titanium (Ti) or chromium (Cr), zinc (Zn) or tin (Sn), and oxygen (O), which comprises 2 to 65 mol% of In as In2O3 and 2 to 65 mol% of Ti or Cr as TiO2 or Cr2O3 respectively, and which when an atom ratio of In is A (at%), atom ratio of Ti or Cr is B (at%), and atom ratio of Zn or Sn is C (at%), satisfies 0.5≤A / B≤5 and 0<C / (A+B)<10. A transparent thin film with a high refractive index can be formed which has a low bulk resistance and is capable of DC sputtering.

　Droplets adhering to the surface of an optical film are completely removed prior to a drying treatment step, optical characteristics and the like of the optical film are ensured, and applicability and ease of maintenance are high. A device for removing droplets is provided with: a draining member provided with a first draining mechanism and a second draining mechanism vertically staggered along the movement direction of the optical film and arranged on the left and right sides of the optical film, both the first draining mechanism and the second draining mechanism removing droplets; a draining-member-holding mechanism provided with a pressing-side member and a receiving-side member having an angle adjustment shaft protruding outward at both ends in the length direction, the pressing-side member and the receiving-side member being detachably secured so as to hold the draining member; and a pair of angle adjustment mechanisms for adjusting and securing the draining-member-holding mechanism so that the angle of the draining member relative to the optical film reaches a prescribed value, the pair of angle adjustment mechanisms being provided on both length-direction sides of the draining-member-holding mechanism, and the angle adjustment mechanisms being provided with a securing stand in which an angle adjustment shaft accommodation space is formed for accommodating at least the angle adjustment shaft.

The invention provides a GaAs-based high-power laser preparation method. When a GaAs low temperature buffer layer, a AlxGayAs lower confinement layer, a AlGaAs lower waveguide layer, a quantum well luminous region, a AlGaAs upper waveguide layer, a AlxGayAs upper confinement layer and a GaAs cap layer are grown, AsH3 gas is first introduced and then TMAL gas defined by component is introduced, then the introduction of TMAL gas is stopped and the TMGa gas defined by the component is introduced with intervals of 1-5s, and the introduction of the AsH3 gas is stopped and growth of TMGa gas is stopped by 1-50s after the interval of 1-10s, and the thickness requirement of each layer growth is reached through periodic circulation. The structure can accurately control the epitaxial growth with onemonoatomic layer per cycle, the epitaxial surface is more atomic and flat and the thickness of the epitaxial layer is only determined by the number of epitaxial periods so as to solve the problems ofchemical weather growth sensitive to temperature, beam current size and the like, grow high-quality thin film materials at lower temperature, ensure current expansion and optical characteristics andimprove reliability and stability of the device.

The invention relates to an oxide sintering body, an oxide sputtering target, a conductive oxide thin film and a method for manufacturing the oxide sintering body. The oxide sintering body is characterized in that the oxide sintering body contains In, Ti, Zn, Sn and O, the content of In relative to that of Ti satisfies a relational expression 3.0<=In / Ti<=5.0 when represented by an atomic number ratio, the content of Zn and Sn relative to that of In and Ti satisfies a relational expression 0.2<=(Zn+Sn) / (In+Ti)<=1.5 when represented by an atomic number ratio, and the content of Zn relative to that of Sn satisfies a relational expression 0.5<=Zn / Sn<=7.0 when represented by an atomic number ratio. The volume resistivity of the oxide sintering body is low, DC sputtering can be performed, and a transparent conducting film with a high index of refraction can be formed.

The invention relates to the technical field of nondestructive detection, and particularly relates to a thermal-state steel tube thickness online detection device. The thermal-state steel tube thickness online detection device comprises a thermal-state steel tube erected on a roller bed, a centripetal back plate erected via a mechanical arm is arranged on the periphery of the thermal-state steel tube, and the device is characterized in that a plurality of detection heads corresponding to the circle center of the steel tube are arranged on the centripetal back plate, and the detection heads are connected with a pulse laser and a continuous laser via light guide arms respectively; the pulse laser and the continuous laser are placed in a refrigerating cabinet away from the steel tube, the pulse laser is connected with an upper computer, and the continuous laser is simultaneously connected with a TWM interferometer in the refrigerating cabinet. By using the light guide arms, the device occupies a small space, and is simple in structure and flexible in adjustment; the lasers can be placed a few meters away from the steel tube, so the working environment is wide, special protective measures are not needed, and the optical characteristics and stability of instruments are guaranteed.

The invention relates to a GaAs-based multi-junction yellow-green light LED and a preparation method thereof, and belongs to the field of photoelectrons. The LED comprises a GaAs substrate, a GaAs low-temperature buffer layer, a Blagg reflector layer, an AlInP lower limiting layer, a multi-quantum well light-emitting region, an AlInP upper limiting layer, an AlxGa1-xInP lattice transition layer, atunnel junction of a GaAs material and a GaP window layer from bottom to top, wherein the tunnel junction of the GaAs material is formed by a GaAs doped P-type layer, a GaAs intrinsic layer and a GaAs doped N-type layer. According to the invention, after the AlInP upper limiting layer is grown, the tunnel junction of the GaAs material with high conductivity and lattice matching grows, and then the LED material with a conventional structure grows, so that the effect of luminous efficiency superposition is achieved on the premise of not increasing voltage, the cost of the device can be reduced,and the quantum efficiency can be greatly improved.