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Oxide sintered body, oxide sputtering target and conductive oxide thin film with high refractive index, and method for producing oxide sintered body

A manufacturing method and technology of sintered body, which can be applied to conductive layers on insulating carriers, sputtering plating, ion implantation plating, etc., can solve problems such as difficulty in using plastic substrates, organic EL devices, etc., to improve productivity and reduce equipment. Cost, effect of high refractive index

Active Publication Date: 2015-06-24
JX NIPPON MINING & METALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these materials have a refractive index in the range of about 1.95 to about 2.05 at a wavelength of 550 nm, and cannot be used as high refractive index materials (n > 2.05) and low refractive index materials (n < 1.95) for optical adjustment.
In addition, ITO has the problem of heating the substrate during film formation in order to increase the transmittance, or requiring annealing after film formation, making it difficult to use for plastic substrates that cannot be heated, organic EL devices, etc.
In addition, there is a problem with IZO that it absorbs on the short wavelength side, so it becomes a yellowish film

Method used

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  • Oxide sintered body, oxide sputtering target and conductive oxide thin film with high refractive index, and method for producing oxide sintered body

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0060] Ready In 2 o 3 Powder, TiO 2 powder, ZnO powder, and these powders were formulated and mixed in the compounding ratio described in Table 1. Next, the mixed powder was heated under an argon atmosphere at a temperature of 1150°C and a pressure of 250kgf / cm 2 hot-pressed sintering conditions. Then, the sintered body is machined and finished into a target shape.

[0061] Next, sputtering was performed using the 6-inch-diameter target obtained by the above finishing process. The sputtering conditions were set as DC sputtering, sputtering power 500W, argon gas pressure 0.5Pa containing 0-2 vol% oxygen, and the film was formed to a film thickness of In addition, substrate heating during sputtering and annealing after sputtering are performed.

[0062] The results are shown in Table 1. As shown in Table 1, the relative density of the sputtering target reaches 98.9%, and the bulk resistance is 2.9×10 -3 Ω·cm, capable of stable DC sputtering. Moreover, the refractive in...

Embodiment 2

[0065] Ready In 2 o 3 Powder, TiO 2 powder, ZnO powder, and these powders were formulated and mixed in the compounding ratio described in Table 1. Next, the mixed powder was heated under an argon atmosphere at a temperature of 1150°C and a pressure of 250kgf / cm 2 hot-pressed sintering conditions. Then, the sintered body is machined and finished into a target shape. Next, sputtering was performed under the same conditions as in Example 1 using the 6-inch-diameter target obtained by the above finishing process. As a result, the relative density of the sputtering target reached 100.3%, and the bulk resistance was 8.7×10 -3 Ω·cm, capable of stable DC sputtering. Moreover, the film obtained by sputtering has a refractive index of 2.15 (wavelength 550nm), an extinction coefficient of less than 0.01 (wavelength 450nm), and a resistance value of 1.8×10 +2 Ω·cm or more, a conductive film with high refractive index and high transmittance was obtained.

Embodiment 3

[0067] Ready In 2 o 3 Powder, TiO 2 powder, ZnO powder, and these powders were formulated and mixed in the compounding ratio described in Table 1. Next, the mixed powder was heated under an argon atmosphere at a temperature of 1100°C and a pressure of 250kgf / cm 2 hot-pressed sintering conditions. Then, the sintered body is machined and finished into a target shape. Next, sputtering was performed under the same conditions as in Example 1 using the 6-inch-diameter target obtained by the above finishing process. As a result, the relative density of the sputtering target reaches 99.5%, and the bulk resistance is 3.5×10 -3 Ω·cm, capable of stable DC sputtering. Moreover, the film obtained by sputtering has a refractive index of 2.22 (wavelength 550nm), an extinction coefficient of less than 0.01 (wavelength 450nm), and a resistance value of 1.2×10 +2 Ω·cm or more, a conductive film with high refractive index and high transmittance was obtained.

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Abstract

A sintered body which is composed of indium (In), titanium (Ti) or chromium (Cr), zinc (Zn) or tin (Sn), and oxygen (O), which comprises 2 to 65 mol% of In as In2O3 and 2 to 65 mol% of Ti or Cr as TiO2 or Cr2O3 respectively, and which when an atom ratio of In is A (at%), atom ratio of Ti or Cr is B (at%), and atom ratio of Zn or Sn is C (at%), satisfies 0.5≤A / B≤5 and 0<C / (A+B)<10. A transparent thin film with a high refractive index can be formed which has a low bulk resistance and is capable of DC sputtering.

Description

technical field [0001] The invention relates to an oxide sintered body, an oxide sputtering target, a conductive oxide thin film with high refractive index and a method for manufacturing an oxide sintered body, in particular to the sputtering of a sintered body with low bulk resistance and capable of DC sputtering A target and a high-refractive-index film produced using the sputtering target. Background technique [0002] When using visible light in various optical devices such as displays and touch panels, the materials used need to be transparent, and in particular, high transmittance is desired over the entire visible light region. In addition, in various optical devices, light loss caused by the difference in refractive index at the interface between the film material and the substrate sometimes occurs. As a method to improve these light losses, there are methods for adjusting the refractive index and optical film thickness. A method for optically adjusting films. The ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/453C04B35/457C23C14/34H01B5/14
CPCC04B35/453C04B35/45C04B35/457C04B35/645C04B2235/3232C04B2235/3241C04B2235/3272C04B2235/3286C23C14/08C23C14/3414
Inventor 奈良淳史
Owner JX NIPPON MINING & METALS CO LTD
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