GaAs-based multi-junction yellow-green light LED and preparation method thereof

Abstract

The invention relates to a GaAs-based multi-junction yellow-green light LED and a preparation method thereof, and belongs to the field of photoelectrons. The LED comprises a GaAs substrate, a GaAs low-temperature buffer layer, a Blagg reflector layer, an AlInP lower limiting layer, a multi-quantum well light-emitting region, an AlInP upper limiting layer, an AlxGa1-xInP lattice transition layer, atunnel junction of a GaAs material and a GaP window layer from bottom to top, wherein the tunnel junction of the GaAs material is formed by a GaAs doped P-type layer, a GaAs intrinsic layer and a GaAs doped N-type layer. According to the invention, after the AlInP upper limiting layer is grown, the tunnel junction of the GaAs material with high conductivity and lattice matching grows, and then the LED material with a conventional structure grows, so that the effect of luminous efficiency superposition is achieved on the premise of not increasing voltage, the cost of the device can be reduced,and the quantum efficiency can be greatly improved.

Description

technical field [0001] The invention relates to a GaAs-based multi-junction yellow-green LED and a preparation method thereof, belonging to the field of optoelectronic technology. Background technique [0002] LED itself has the advantages of small size, light weight, low heat generation, low power consumption, long life, good monochromaticity, fast response, environmental protection, and good shock resistance, so it is widely used in various fields. With the continuous advancement of technology and the change of people's life philosophy, quaternary AlGaInP yellow-green light-emitting diodes are widely used in various fields such as signal indication, traffic indication, automotive lighting, and special lighting. As the wavelength of quaternary AlGaInP materials shortens, the Al composition of the active layer increases continuously, and the combination of Al atoms with oxygen or carbon atoms leads to serious lattice defects in the material, and the luminous efficiency decre...

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Problems solved by technology

As the wavelength of quaternary AlGaInP materials shortens, the Al composition of the active layer increases continuously, and the combination of Al atoms with oxygen or carbon atoms leads to serious lattice defects in the material, and the luminous efficiency decreases; on the other hand, the energy band of yellow-green light Due to the increase in the proportion of Al components, the energy gap gradually changes from direct energy gap to indirect energy gap, and the internal quantum efficiency further drops significantly, resulting in low luminous efficiency of LED products in the yellow-green light band; at the same time, the production of At the same time, due to the poor epitaxial deposition efficiency at the edge of the carrier disk, the edge performance of the epitaxial wafer is poor after growth, and the production yield is low. Such problems are more obvious in the yellow-green light band with the more extreme process window.

[0003] The conventional LED structure includes a GaAs low-temperature buffer layer, a Blagg mirror layer, an AlInP lower confinement layer, a multi-quantum well light-emitting region, an AlInP upper confinement layer, and a p-GaP window layer on a GaAs substrate from bottom to top. Under a certain working voltage, the luminous efficiency is low, because the AlInP material and the GaP material lattice do not match, there is a potential barrier difference, and a heterojunction peak is formed, and a large Joule heat is generated during the working process to lose capacity, and the aging performance of the device Greatly reduced

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